Transistors programmable by two single electrons

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H01L29/7888

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7888Transistors programmable by two single electrons

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Electrically programmable and eraseable memory device
- Patent number 9,425,325
- Issue date Aug 23, 2016
- Cypress Semiconductor Corporation
- Minh Q. Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically programmable and erasable memory device and method of...
- Patent number 8,633,074
- Issue date Jan 21, 2014
- Spansion LLC
- Minh Q. Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random number generating device
- Patent number 8,330,160
- Issue date Dec 11, 2012
- Kabushiki Kaisha Toshiba
- Tetsufumi Tanamoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum dot transistor
- Patent number 8,278,647
- Issue date Oct 2, 2012
- The Board of Trustees of the Leland Stanford Junior University
- Timothy P. Holme
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor storage device and manufacturing method thereof
- Patent number 8,198,665
- Issue date Jun 12, 2012
- Kabushiki Kaisha Toshiba
- Kenji Kawabata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Charge storage nanostructure
- Patent number 8,143,658
- Issue date Mar 27, 2012
- QuNano AB
- Lars Samuelson
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum dot memory
- Patent number 7,972,878
- Issue date Jul 5, 2011
- Academia Sinica
- Yia-Chung Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Single-charge tunnelling device
- Patent number 7,893,426
- Issue date Feb 22, 2011
- Hitachi Limited
- Jörg Wunderlich
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical tunneling transistor
- Patent number 7,847,282
- Issue date Dec 7, 2010
- Micron Technologies, Inc.
- Gurtej S. Sandhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Layered composite film incorporating quantum dots as programmable d...
- Patent number 7,692,180
- Issue date Apr 6, 2010
- RavenBrick LLC
- Gary E. Snyder
- G11 - INFORMATION STORAGE
Information Patent Grant
Layered composite film incorporating a quantum dot shift register
- Patent number 7,659,538
- Issue date Feb 9, 2010
- RavenBrick, LLC
- Gary E. Snyder
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating a single electron transistor having memory fu...
- Patent number 7,629,244
- Issue date Dec 8, 2009
- Samsung Electronics Co., Ltd.
- Soo-doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random number generating device
- Patent number 7,629,609
- Issue date Dec 8, 2009
- Kabushiki Kaisha Toshiba
- Tetsufumi Tanamoto
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Random number generating device
- Patent number 7,558,813
- Issue date Jul 7, 2009
- Kabushiki Kaisha Toshiba
- Tetsufumi Tanamoto
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nonvolatile semiconductor memory device and manufacturing process o...
- Patent number 7,550,802
- Issue date Jun 23, 2009
- Asahi Glass Company, Limited
- Mitsumasa Koyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Positioning of nanoparticles and fabrication of single election dev...
- Patent number 7,465,953
- Issue date Dec 16, 2008
- Board of Regents, The University of Texas System
- Seong Jin Koh
- G01 - MEASURING TESTING
Information Patent Grant
Atomic device
- Patent number 7,459,673
- Issue date Dec 2, 2008
- Japan Science and Technology Agency
- Hidetoshi Katori
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Vertical tunneling transistor
- Patent number 7,414,260
- Issue date Aug 19, 2008
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random number generating device
- Patent number 7,405,423
- Issue date Jul 29, 2008
- Kabushiki Kaisha Toshiba
- Tetsufumi Tanamoto
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nanostructure, electronic device and method of manufacturing the same
- Patent number 7,348,670
- Issue date Mar 25, 2008
- Canon Kabushiki Kaisha
- Tohru Den
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating nonvolatile memory using a quantum dot
- Patent number 7,338,858
- Issue date Mar 4, 2008
- Dongbu Electronics Co., Ltd.
- Kwan Joo Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element and semiconductor memory device using the same
- Patent number 7,309,892
- Issue date Dec 18, 2007
- Hitachi, Ltd.
- Kazuo Yano
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell, memory cell arrangement and method for pr...
- Patent number 7,265,376
- Issue date Sep 4, 2007
- Infineon Technologies, Inc.
- Andrew Graham
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming silicon quantum dots and methods of fabricating...
- Patent number 7,217,620
- Issue date May 15, 2007
- Dongbu Electronics Co., Ltd.
- Kwan-Ju Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic apparatus and logic circuit
- Patent number 7,138,651
- Issue date Nov 21, 2006
- Kabushiki Kaisha Toshiba
- Ken Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single electron transistor having memory function
- Patent number 7,105,874
- Issue date Sep 12, 2006
- Samsung Electronics Co., Ltd.
- Soo-doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element and semiconductor memory device using the same
- Patent number 7,061,053
- Issue date Jun 13, 2006
- Hitachi, Ltd.
- Kazuo Yano
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated memory circuit for storing a binary datum in a memory cell
- Patent number 7,042,039
- Issue date May 9, 2006
- STMicroelectronics S.A.
- Pascale Mazoyer
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical tunneling transistor
- Patent number 7,026,642
- Issue date Apr 11, 2006
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nanoparticle field effect transistor and transistor memory...
- Patent number 6,984,842
- Issue date Jan 10, 2006
- The Board of Trustees of the University of Illinois
- Munir H. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRICALLY PROGRAMMABLE AND ERASEABLE MEMORY DEVICE
- Publication number 20140124848
- Publication date May 8, 2014
- SPANSION LLC
- Minh Q. TRAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE STORAGE NANOSTRUCTURE
- Publication number 20110204331
- Publication date Aug 25, 2011
- QuNano AB
- Lars Samuelson
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE-CHARGE TUNNELING DEVICE
- Publication number 20110103138
- Publication date May 5, 2011
- Jörg WUNDERLICH
- G11 - INFORMATION STORAGE
Information Patent Application
QUANTUM DOT MEMORY
- Publication number 20100308303
- Publication date Dec 9, 2010
- ACADEMIA SINICA
- Yia-Chung Chang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Quantum dot transistor
- Publication number 20100181551
- Publication date Jul 22, 2010
- Timothy P. Holme
- B82 - NANO-TECHNOLOGY
Information Patent Application
High density nanodot nonvolatile memory
- Publication number 20100090265
- Publication date Apr 15, 2010
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically programmable and erasable memory device and method of...
- Publication number 20100065901
- Publication date Mar 18, 2010
- Spansion LLC
- Minh Q. Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090096004
- Publication date Apr 16, 2009
- Kenji KAWABATA
- B82 - NANO-TECHNOLOGY
Information Patent Application
Vertical Tunneling Transistor
- Publication number 20080303084
- Publication date Dec 11, 2008
- Micron Technology, Inc.
- Gurtej S. Sandhu
- B82 - NANO-TECHNOLOGY
Information Patent Application
RANDOM NUMBER GENERATING DEVICE
- Publication number 20080251783
- Publication date Oct 16, 2008
- Kabushiki Kaisha Toshiba
- Tetsufumi Tanamoto
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RANDOM NUMBER GENERATING DEVICE
- Publication number 20080251782
- Publication date Oct 16, 2008
- Kabushiki Kaisha Toshiba
- Tetsufumi Tanamoto
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RANDOM NUMBER GENERATING DEVICE
- Publication number 20080256152
- Publication date Oct 16, 2008
- Kabushiki Kaisha Toshiba
- Tetsufumi Tanamoto
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME
- Publication number 20080061298
- Publication date Mar 13, 2008
- Kazuo Yano
- G11 - INFORMATION STORAGE
Information Patent Application
Single-charge tunnelling device
- Publication number 20070200156
- Publication date Aug 30, 2007
- Jorg Wunderlich
- G11 - INFORMATION STORAGE
Information Patent Application
Atomic device
- Publication number 20070158541
- Publication date Jul 12, 2007
- Hidetoshi Katori
- B82 - NANO-TECHNOLOGY
Information Patent Application
Single electron transistor having memory function and method of man...
- Publication number 20060255368
- Publication date Nov 16, 2006
- Samsung Electronics Co., Ltd.
- Soo-doo Chae
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor element and semiconductor memory device using the same
- Publication number 20060208315
- Publication date Sep 21, 2006
- Kazuo Yano
- G11 - INFORMATION STORAGE
Information Patent Application
Nanostructure, electronic device and method of manufacturing the same
- Publication number 20060112466
- Publication date May 25, 2006
- Canon Kabushiki Kaisha
- Tohru Den
- C30 - CRYSTAL GROWTH
Information Patent Application
Layered composite film incorporating a quantum dot shift register
- Publication number 20060049394
- Publication date Mar 9, 2006
- Gary E. Snyder
- G02 - OPTICS
Information Patent Application
Non-volatile memory cell, memory cell arrangement and method for pr...
- Publication number 20060011972
- Publication date Jan 19, 2006
- Andrew Graham
- G11 - INFORMATION STORAGE
Information Patent Application
Layered composite film incorporating quantum dots as programmable d...
- Publication number 20060011904
- Publication date Jan 19, 2006
- Gary E. Snyder
- G02 - OPTICS
Information Patent Application
Vertical tunneling transistor
- Publication number 20060008950
- Publication date Jan 12, 2006
- Gurtej S. Sandhu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Methods of fabricating nonvolatile memory using a quantum dot
- Publication number 20050142721
- Publication date Jun 30, 2005
- Kwan Joo Koh
- B82 - NANO-TECHNOLOGY
Information Patent Application
Methods of forming silicon quantum dots and methods of fabricating...
- Publication number 20050142753
- Publication date Jun 30, 2005
- Kwan-Ju Koh
- B82 - NANO-TECHNOLOGY
Information Patent Application
Novolatile semiconductor memory device and manufacturing process of...
- Publication number 20050122775
- Publication date Jun 9, 2005
- ASAHI GLASS COMPANY, LIMITED
- Mitsumasa Koyanagi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Vertical tunneling transistor
- Publication number 20050045871
- Publication date Mar 3, 2005
- Gurtej S. Sandhu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor element and semiconductor memory device using the same
- Publication number 20050023615
- Publication date Feb 3, 2005
- Kazuo Yano
- G11 - INFORMATION STORAGE
Information Patent Application
Logic apparatus and logic circuit
- Publication number 20040262598
- Publication date Dec 30, 2004
- Kabushiki Kaisha Toshiba
- Ken Uchida
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Single electron transistor having memory function and method of man...
- Publication number 20040155253
- Publication date Aug 12, 2004
- Soo-doo Chae
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for storing a binary datum in a memory cell of an integrated...
- Publication number 20040150024
- Publication date Aug 5, 2004
- STMicroelectronics S.A.
- Pascale Mazoyer
- G11 - INFORMATION STORAGE

Transistors programmable by two single electrons

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electrically programmable and eraseable memory device

Electrically programmable and erasable memory device and method of...

Random number generating device

Quantum dot transistor

Semiconductor storage device and manufacturing method thereof

Charge storage nanostructure

Quantum dot memory

Single-charge tunnelling device

Vertical tunneling transistor

Layered composite film incorporating quantum dots as programmable d...

Layered composite film incorporating a quantum dot shift register

Method of fabricating a single electron transistor having memory fu...

Random number generating device

Random number generating device

Nonvolatile semiconductor memory device and manufacturing process o...

Positioning of nanoparticles and fabrication of single election dev...

Atomic device

Vertical tunneling transistor

Random number generating device

Nanostructure, electronic device and method of manufacturing the same

Methods of fabricating nonvolatile memory using a quantum dot

Semiconductor element and semiconductor memory device using the same

Non-volatile memory cell, memory cell arrangement and method for pr...

Methods of forming silicon quantum dots and methods of fabricating...

Logic apparatus and logic circuit

Single electron transistor having memory function

Semiconductor element and semiconductor memory device using the same

Integrated memory circuit for storing a binary datum in a memory cell

Vertical tunneling transistor

Silicon nanoparticle field effect transistor and transistor memory...

Patents Applicationslast 30 patents

ELECTRICALLY PROGRAMMABLE AND ERASEABLE MEMORY DEVICE

CHARGE STORAGE NANOSTRUCTURE

SINGLE-CHARGE TUNNELING DEVICE

QUANTUM DOT MEMORY

Quantum dot transistor

High density nanodot nonvolatile memory

Electrically programmable and erasable memory device and method of...

SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF

Vertical Tunneling Transistor

RANDOM NUMBER GENERATING DEVICE

RANDOM NUMBER GENERATING DEVICE

RANDOM NUMBER GENERATING DEVICE

SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME

Single-charge tunnelling device

Atomic device

Single electron transistor having memory function and method of man...

Semiconductor element and semiconductor memory device using the same

Nanostructure, electronic device and method of manufacturing the same

Layered composite film incorporating a quantum dot shift register

Non-volatile memory cell, memory cell arrangement and method for pr...

Layered composite film incorporating quantum dots as programmable d...

Vertical tunneling transistor

Methods of fabricating nonvolatile memory using a quantum dot

Methods of forming silicon quantum dots and methods of fabricating...

Novolatile semiconductor memory device and manufacturing process of...

Vertical tunneling transistor

Semiconductor element and semiconductor memory device using the same

Logic apparatus and logic circuit

Single electron transistor having memory function and method of man...

Method for storing a binary datum in a memory cell of an integrated...