with titanium nitride portion or region

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CPC
Y10S257/915

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S257/00Active solid-state devices

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Y10S257/915with titanium nitride portion or region

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Patents Grantslast 30 patents

Information Patent Grant
Method of treating an oxidized layer of metal nitride
- Patent number 8,883,654
- Issue date Nov 11, 2014
- Altis Semiconductor
- Michel Aube
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Titanium nitride films
- Patent number 8,633,110
- Issue date Jan 21, 2014
- Micron Technology, Inc.
- Brenda D Kraus
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Titanium nitride films
- Patent number 8,058,729
- Issue date Nov 15, 2011
- Micron Technology, Inc.
- Brenda D Kraus
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,579,231
- Issue date Aug 25, 2009
- Kabushiki Kaisha Toshiba
- Kouji Matsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ALD formed titanium nitride films
- Patent number 7,473,637
- Issue date Jan 6, 2009
- Micron Technology, Inc.
- Brenda D Kraus
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Reduced cell-to-cell shorting for memory arrays
- Patent number 7,452,770
- Issue date Nov 18, 2008
- Micron Technology, Inc.
- Kevin R. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced cell-to-cell shorting for memory arrays
- Patent number 7,442,979
- Issue date Oct 28, 2008
- Micron Technology, Inc.
- Kevin R. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a liquid crystal display device
- Patent number 7,396,765
- Issue date Jul 8, 2008
- LG Display Co., Ltd.
- Dai Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced cell-to-cell shorting for memory arrays
- Patent number 7,091,085
- Issue date Aug 15, 2006
- Micron Technology, Inc.
- Kevin R. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING MEMORY CELL SECTI...
- Patent number 6,924,525
- Issue date Aug 2, 2005
- Hitachi, Ltd.
- Seiji Narui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,916,695
- Issue date Jul 12, 2005
- NEC Corporation
- Hitoshi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductor layer nitridation
- Patent number 6,887,774
- Issue date May 3, 2005
- Micron Technology, Inc.
- Yongjun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for contact formation using a silicon-germanium alloy
- Patent number 6,879,044
- Issue date Apr 12, 2005
- Micron Technology, Inc.
- Randhir P. S. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having self-aligned CVD-tungsten/titanium contac...
- Patent number 6,812,512
- Issue date Nov 2, 2004
- Micron Technology, Inc.
- Kirk Prall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for contact formation using a silicon-germanium alloy
- Patent number 6,806,572
- Issue date Oct 19, 2004
- Micron Technology, Inc.
- Randhir P. S. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductor layer nitridation
- Patent number 6,798,026
- Issue date Sep 28, 2004
- Micron Technology, Inc.
- Yongjun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a metal wiring and metal contact in a semic...
- Patent number 6,794,286
- Issue date Sep 21, 2004
- Kabushiki Kaisha Toshiba
- Hisako Aoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten-based interconnect that utilizes thin titanium nitride layer
- Patent number 6,787,914
- Issue date Sep 7, 2004
- Mosel Vitelic, Inc.
- Vincent Fortin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,737,716
- Issue date May 18, 2004
- Kabushiki Kaisha Toshiba
- Kouji Matsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating integrated circuit memories including titani...
- Patent number 6,703,306
- Issue date Mar 9, 2004
- Samsung Electronics Co., Ltd.
- Kyu-Pil Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures formed using silicide cap as an etch stop in multilayer...
- Patent number 6,703,709
- Issue date Mar 9, 2004
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors, field effect transistor assemblies, and i...
- Patent number 6,693,313
- Issue date Feb 17, 2004
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having self-aligned CVD-tungsten/titanium contac...
- Patent number 6,686,288
- Issue date Feb 3, 2004
- Micron Technology, Inc.
- Kirk Prall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of tungstein-based interconnect using thin physically vap...
- Patent number 6,670,267
- Issue date Dec 30, 2003
- Mosel Vitelic Inc.
- Vincent Fortin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including resistance elements and fuse elements
- Patent number 6,667,537
- Issue date Dec 23, 2003
- Seiko Epson Corporation
- Michio Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device and method for manufacturin...
- Patent number 6,635,918
- Issue date Oct 21, 2003
- Hitachi, Ltd.
- Seiji Narui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned, lateral diffusion barrier in metal lines to eliminate...
- Patent number 6,597,067
- Issue date Jul 22, 2003
- International Business Machines Corporation
- Glenn Allen Biery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded composition diffusion barriers for chip wiring applications
- Patent number 6,569,783
- Issue date May 27, 2003
- International Business Machines Corporation
- Cyprian E. Uzoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,555,885
- Issue date Apr 29, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating integrated circuit field effect transistors...
- Patent number 6,544,873
- Issue date Apr 8, 2003
- Samsung Electronics Co., Ltd.
- Kye-hee Yeom
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF TREATING AN OXIDIZED LAYER OF METAL NITRIDE
- Publication number 20120228642
- Publication date Sep 13, 2012
- Michel Aube
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TITANIUM NITRIDE FILMS
- Publication number 20120056326
- Publication date Mar 8, 2012
- Brenda D. Kraus
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ALD FORMED TITANIUM NITRIDE FILMS
- Publication number 20070200243
- Publication date Aug 30, 2007
- Micron Technology, Inc.
- Brenda D. Kraus
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
REDUCED CELL-TO-CELL SHORTING FOR MEMORY ARRAYS
- Publication number 20070131995
- Publication date Jun 14, 2007
- Micron Technology, Inc.
- Kevin R. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALD formed titanium nitride films
- Publication number 20070020923
- Publication date Jan 25, 2007
- Micron Technology, Inc.
- Brenda D. Kraus
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of fabricating a liquid crystal display device
- Publication number 20060105486
- Publication date May 18, 2006
- Dai Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced cell-to-cell shorting for memory arrays
- Publication number 20050260813
- Publication date Nov 24, 2005
- Kevin R. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Brca-1 regulators and methods of use
- Publication number 20050208486
- Publication date Sep 22, 2005
- Jack Barber
- G01 - MEASURING TESTING
Information Patent Application
Reduced cell-to-cell shorting for memory arrays
- Publication number 20050106809
- Publication date May 19, 2005
- Kevin R. Shea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductor layer nitridation
- Publication number 20040238845
- Publication date Dec 2, 2004
- Micron Technology Inc.
- Yongjun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040183142
- Publication date Sep 23, 2004
- Kabushiki Kaisha Toshiba
- Kouji Matsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure for contact formation using a silicon-germanium alloy
- Publication number 20040159948
- Publication date Aug 19, 2004
- Micron Technology, Inc.
- Randhir P.S. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device and method for manufacturin...
- Publication number 20040031980
- Publication date Feb 19, 2004
- Seiji Narui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor assemblies, integrated circuitry, and metho...
- Publication number 20030094633
- Publication date May 22, 2003
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure for contact formation using a silicon-germanium alloy
- Publication number 20030057555
- Publication date Mar 27, 2003
- Micron Technology, Inc.
- Randhir P.S. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin titanium nitride layers used in conjunction with tungsten
- Publication number 20030001265
- Publication date Jan 2, 2003
- Vincent Fortin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductor layer nitridation
- Publication number 20030001212
- Publication date Jan 2, 2003
- Micron Technology, Inc.
- Yongjun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin titanium nitride layers used in conjunction with tungsten
- Publication number 20030003721
- Publication date Jan 2, 2003
- Vincent Fortin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020179975
- Publication date Dec 5, 2002
- Hitoshi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and process of fabricating the same
- Publication number 20020173116
- Publication date Nov 21, 2002
- Hisako Apyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020090757
- Publication date Jul 11, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a novel graded silicon nitride/silicon oxide ( SN...
- Publication number 20020063343
- Publication date May 30, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Shih-Chi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Graded composition diffusion barriers for chip wiring applications
- Publication number 20020058163
- Publication date May 16, 2002
- Cyprian E. Uzoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONDUCTOR LAYER NITRIDATION
- Publication number 20020008292
- Publication date Jan 24, 2002
- YONGIUN HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT OF LOW-K SIOF TO PREVENT METAL INTERACTION
- Publication number 20010044203
- Publication date Nov 22, 2001
- RICHARD J. HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor assemblies, integrated circuitry, and metho...
- Publication number 20010019868
- Publication date Sep 6, 2001
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit having self-aligned CVD-tungsten/titanium contac...
- Publication number 20010019893
- Publication date Sep 6, 2001
- Kirk Prall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for endpointing planarization of a microelectr...
- Publication number 20010017401
- Publication date Aug 30, 2001
- John T. Moore
- B24 - GRINDING POLISHING
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20010015463
- Publication date Aug 23, 2001
- NEC Corporation
- Hitoshi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING INTEGRATED CIRCUIT MEMORIES INCLUDING TITANI...
- Publication number 20010007365
- Publication date Jul 12, 2001
- Kyu-Pil Lee
- H01 - BASIC ELECTRIC ELEMENTS

with titanium nitride portion or region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of treating an oxidized layer of metal nitride

Titanium nitride films

Titanium nitride films

Semiconductor device and method of manufacturing the same

ALD formed titanium nitride films

Reduced cell-to-cell shorting for memory arrays

Reduced cell-to-cell shorting for memory arrays

Method of fabricating a liquid crystal display device

Reduced cell-to-cell shorting for memory arrays

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING MEMORY CELL SECTI...

Semiconductor device and method of manufacturing the same

Conductor layer nitridation

Structure for contact formation using a silicon-germanium alloy

Integrated circuit having self-aligned CVD-tungsten/titanium contac...

Structure for contact formation using a silicon-germanium alloy

Conductor layer nitridation

Process for fabricating a metal wiring and metal contact in a semic...

Tungsten-based interconnect that utilizes thin titanium nitride layer

Semiconductor device and method of manufacturing the same

Methods of fabricating integrated circuit memories including titani...

Structures formed using silicide cap as an etch stop in multilayer...

Field effect transistors, field effect transistor assemblies, and i...

Integrated circuit having self-aligned CVD-tungsten/titanium contac...

Formation of tungstein-based interconnect using thin physically vap...

Semiconductor devices including resistance elements and fuse elements

Semiconductor integrated circuit device and method for manufacturin...

Self-aligned, lateral diffusion barrier in metal lines to eliminate...

Graded composition diffusion barriers for chip wiring applications

Semiconductor device and method of manufacturing the same

Methods of fabricating integrated circuit field effect transistors...

Patents Applicationslast 30 patents

METHOD OF TREATING AN OXIDIZED LAYER OF METAL NITRIDE

TITANIUM NITRIDE FILMS

ALD FORMED TITANIUM NITRIDE FILMS

REDUCED CELL-TO-CELL SHORTING FOR MEMORY ARRAYS

ALD formed titanium nitride films

Method of fabricating a liquid crystal display device

Reduced cell-to-cell shorting for memory arrays

Brca-1 regulators and methods of use

Reduced cell-to-cell shorting for memory arrays

Conductor layer nitridation

Semiconductor device and method of manufacturing the same

Structure for contact formation using a silicon-germanium alloy

Semiconductor integrated circuit device and method for manufacturin...

Field effect transistor assemblies, integrated circuitry, and metho...

Structure for contact formation using a silicon-germanium alloy

Thin titanium nitride layers used in conjunction with tungsten

Conductor layer nitridation

Thin titanium nitride layers used in conjunction with tungsten

Semiconductor device and method of manufacturing the same

Semiconductor device and process of fabricating the same

Semiconductor device and method of manufacturing the same

Method for making a novel graded silicon nitride/silicon oxide ( SN...

Graded composition diffusion barriers for chip wiring applications

CONDUCTOR LAYER NITRIDATION

SURFACE TREATMENT OF LOW-K SIOF TO PREVENT METAL INTERACTION

Field effect transistor assemblies, integrated circuitry, and metho...

Integrated circuit having self-aligned CVD-tungsten/titanium contac...

Method and apparatus for endpointing planarization of a microelectr...

Semiconductor device and method of manufacturing the same

METHODS OF FABRICATING INTEGRATED CIRCUIT MEMORIES INCLUDING TITANI...