without inversion channel

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H01L29/7838

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7838without inversion channel

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit with continuous active region and raised source/...
- Patent number 12,230,684
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jinha Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device architectures with tensile and compressive strained substrates
- Patent number 12,218,201
- Issue date Feb 4, 2025
- National University of Singapore
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 12,211,853
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power devices having tunable saturation current clamps therein that...
- Patent number 12,094,932
- Issue date Sep 17, 2024
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor with adjusted gate-source distance, and manufacturi...
- Patent number 12,062,715
- Issue date Aug 13, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,046,674
- Issue date Jul 23, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switching device
- Patent number 12,027,623
- Issue date Jul 2, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,015,082
- Issue date Jun 18, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multichannel heterostructure and manufact...
- Patent number 12,009,396
- Issue date Jun 11, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit including integrated level shifter transistor
- Patent number 12,002,804
- Issue date Jun 4, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 11,978,799
- Issue date May 7, 2024
- Tahoe Research, LTD.
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor using elastic edge relaxation of a stressor...
- Patent number 11,978,800
- Issue date May 7, 2024
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 11,973,146
- Issue date Apr 30, 2024
- Kabushiki Kaisha Tokai-Rika-Denki-Seisakusho
- Kengo Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,942,539
- Issue date Mar 26, 2024
- Kabushiki Kaisha Toshiba
- Shotaro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-biased or biasing transistor(s) for an electronic voltage divi...
- Patent number 11,940,825
- Issue date Mar 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Anthony Quelen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep nwell contact structures
- Patent number 11,929,399
- Issue date Mar 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-gate field effect transistor and method for modulating the d...
- Patent number 11,908,935
- Issue date Feb 20, 2024
- Soochow University
- Mingxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices and systems, and methods for making and using th...
- Patent number 11,887,895
- Issue date Jan 30, 2024
- United Semiconductor Japan Co., Ltd.
- Scott E. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,881,529
- Issue date Jan 23, 2024
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel stop and well dopant migration control implant for reduced...
- Patent number 11,869,956
- Issue date Jan 9, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure including transistor using buried insulator layer as gate...
- Patent number 11,837,605
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of single crystal semiconductors using planar vapor liqui...
- Patent number 11,784,045
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Martin Christopher Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 11,705,458
- Issue date Jul 18, 2023
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with programmable element
- Patent number 11,637,202
- Issue date Apr 25, 2023
- NANYA TECHNOLOGY CORPORATION
- Chang-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond MIS transistor
- Patent number 11,569,381
- Issue date Jan 31, 2023
- Centre National de la Recherche Scientifique
- Julien Pernot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency (RF) amplifier device on silicon-on-insulator (SOI)...
- Patent number 11,482,543
- Issue date Oct 25, 2022
- metaMOS Solutions Inc.
- Timothy Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,476,363
- Issue date Oct 18, 2022
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor using elastic edge relaxation of a stressor...
- Patent number 11,476,364
- Issue date Oct 18, 2022
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain-extended transistor
- Patent number 11,456,381
- Issue date Sep 27, 2022
- Texas Instruments Incorporated
- Meng-Chia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display system and method for forming an output buffer of a source...
- Patent number 11,436,992
- Issue date Sep 6, 2022
- Vanguard International Semiconductor Corporation
- Yu-Lung Chin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...
- Publication number 20250022947
- Publication date Jan 16, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Device with Blocking Region
- Publication number 20250006793
- Publication date Jan 2, 2025
- SOOCHOW UNIVERSITY
- Mingxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL GALLIUM OXIDE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250006838
- Publication date Jan 2, 2025
- POWER CUBESEMI INC.
- Tai Young KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Switching Device
- Publication number 20240413243
- Publication date Dec 12, 2024
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPAROUND GATE STRUCTURE
- Publication number 20240395932
- Publication date Nov 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John L. LEMON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR FORMED ON SO...
- Publication number 20240363750
- Publication date Oct 31, 2024
- RENESAS ELECTRONICS CORPORATION
- Kazuya UEJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240355893
- Publication date Oct 24, 2024
- United Microelectronics Corp.
- Kai-Kuen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPFET TRANSISTOR
- Publication number 20240322038
- Publication date Sep 26, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Leakage Replacement Metal Gate FET
- Publication number 20240313081
- Publication date Sep 19, 2024
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTICHANNEL HETEROSTRUCTURE AND MANUFACT...
- Publication number 20240297231
- Publication date Sep 5, 2024
- Innoscience (Zhuhai) Technology Co., Ltd.
- Anbang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240290791
- Publication date Aug 29, 2024
- RENESAS ELECTRONICS CORPORATION
- Tetsuya YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH ISOLATED WELL
- Publication number 20240258320
- Publication date Aug 1, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Siva Kumar CHINTHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...
- Publication number 20240250172
- Publication date Jul 25, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS
- Publication number 20240234425
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Tamilmani ETHIRAJAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRAT...
- Publication number 20240213331
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH BACK-GATE HAVING OPPOSITELY DOPED SEMICONDUCTOR REGIONS
- Publication number 20240170576
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Zhixing Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240162300
- Publication date May 16, 2024
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET TRANSISTOR
- Publication number 20240154034
- Publication date May 9, 2024
- STMicroelectronics (Rousset) SAS
- Julien DURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING CONDUCTING STRUCTURE AND METHODS...
- Publication number 20240145593
- Publication date May 2, 2024
- Peiching LING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20240145480
- Publication date May 2, 2024
- STMicroelectronics, Inc.
- John H. ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS FOR THE SAME
- Publication number 20240128339
- Publication date Apr 18, 2024
- Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Guangjie XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS DESIGNED WITH REDUCED LEAKAGE
- Publication number 20240105793
- Publication date Mar 28, 2024
- pSemi Corporation
- Simon WILLARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR ON SOI STRUCTURE
- Publication number 20240097030
- Publication date Mar 21, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Sebastien CREMER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...
- Publication number 20240088262
- Publication date Mar 14, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming SiGe Channel
- Publication number 20240072168
- Publication date Feb 29, 2024
- Shanghai Huali Integrated Circuit Corporation
- Xinhua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE INCLUDING TRANSISTOR USING BURIED INSULATOR LAYER AS GATE...
- Publication number 20240055434
- Publication date Feb 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICE WITH TWO FIELD-EFFECT TRANSISTORS HAVING A C...
- Publication number 20240038764
- Publication date Feb 1, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Sylvain BARRAUD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICE WITH TWO FIELD-EFFECT TRANSISTORS
- Publication number 20240030221
- Publication date Jan 25, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Sylvain BARRAUD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...
- Publication number 20240030027
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION
- Publication number 20240021725
- Publication date Jan 18, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS

without inversion channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated circuit with continuous active region and raised source/...

Device architectures with tensile and compressive strained substrates

Integrated circuit devices and fabrication techniques

Power devices having tunable saturation current clamps therein that...

HEMT transistor with adjusted gate-source distance, and manufacturi...

DEPFET transistor and method of manufacturing a DEPFET transistor

High voltage switching device

DEPFET transistor and method of manufacturing a DEPFET transistor

Semiconductor device with multichannel heterostructure and manufact...

Half-bridge circuit including integrated level shifter transistor

Method for fabricating transistor with thinned channel

Strained semiconductor using elastic edge relaxation of a stressor...

Semiconductor integrated circuit

Semiconductor device

Self-biased or biasing transistor(s) for an electronic voltage divi...

Deep nwell contact structures

Single-gate field effect transistor and method for modulating the d...

Electronic devices and systems, and methods for making and using th...

Semiconductor device and method of fabricating the same

Channel stop and well dopant migration control implant for reduced...

Structure including transistor using buried insulator layer as gate...

Formation of single crystal semiconductors using planar vapor liqui...

Integrated circuit devices and fabrication techniques

Method for fabricating semiconductor device with programmable element

Diamond MIS transistor

Radio frequency (RF) amplifier device on silicon-on-insulator (SOI)...

Semiconductor device and method of fabricating the same

Strained semiconductor using elastic edge relaxation of a stressor...

Drain-extended transistor

Display system and method for forming an output buffer of a source...

Patents Applicationslast 30 patents

HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...

Field Effect Transistor Device with Blocking Region

LATERAL GALLIUM OXIDE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

High Voltage Switching Device

WRAPAROUND GATE STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR FORMED ON SO...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

DEPFET TRANSISTOR

Low Leakage Replacement Metal Gate FET

SEMICONDUCTOR DEVICE WITH MULTICHANNEL HETEROSTRUCTURE AND MANUFACT...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

STRUCTURE WITH ISOLATED WELL

STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...

DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS

GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRAT...

STRUCTURE WITH BACK-GATE HAVING OPPOSITELY DOPED SEMICONDUCTOR REGIONS

NITRIDE SEMICONDUCTOR DEVICE

MOSFET TRANSISTOR

SEMICONDUCTOR STRUCTURES INCLUDING CONDUCTING STRUCTURE AND METHODS...

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS FOR THE SAME

TRANSISTORS DESIGNED WITH REDUCED LEAKAGE

MOS TRANSISTOR ON SOI STRUCTURE

CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...

Method for Forming SiGe Channel

STRUCTURE INCLUDING TRANSISTOR USING BURIED INSULATOR LAYER AS GATE...

MICROELECTRONIC DEVICE WITH TWO FIELD-EFFECT TRANSISTORS HAVING A C...

MICROELECTRONIC DEVICE WITH TWO FIELD-EFFECT TRANSISTORS

FORMATION OF SINGLE CRYSTAL SEMICONDUCTORS USING PLANAR VAPOR LIQUI...

GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION