3222217

Information

• Patent Grant
• 3222217

• References
• Source

• Patent Number

  3,222,217

• Date Filed

  Not available

• Date Issued

  Tuesday, December 7, 1965
  59 years ago

• CPC

  • H01L21/02661 - In-situ cleaning
  • C01B33/035 - by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal
  • C23C8/00 - Solid state diffusion of only non-metal elements into metallic material surfaces Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating
  • C30B9/14 - by electrolysis
  • C30B25/02 - Epitaxial-layer growth
  • C30B25/08 - Reaction chambers Selection of material therefor
  • C30B25/14 - Feed and outlet means for the gases Modifying the flow of the reactive gases
  • C30B35/00 - Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure
  • G05D23/1906 - using an analogue comparing device
  • G05D23/27 - with sensing element responsive to radiation
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L21/185 - Joining of semiconductor bodies for junction formation

• US Classifications

  • 427 - Coating processes
  • 118 - Coating apparatus
  • 257 - Active solid-state devices