3304200

Information

• Patent Grant
• 3304200

• References
• Source

• Patent Number

  3,304,200

• Date Filed

  Not available

• Date Issued

  Tuesday, February 14, 1967
  58 years ago

• CPC

  • H01L21/02164 - the material being a silicon oxide
  • C23C16/402 - Silicon dioxide
  • H01L21/02216 - the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen
  • H01L21/02271 - deposition by decomposition or reaction of gaseous or vapour phase compounds
  • H01L21/02304 - formation of intermediate layers
  • H01L21/31608 - Deposition of SiO2
  • H01L21/31612 - on a silicon body
  • Y10S148/043 - Dual dielectric
  • Y10S148/079 - Inert carrier gas
  • Y10S148/118 - Oxide films

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices