3463681

Information

• Patent Grant
• 3463681

• References
• Source

• Patent Number

  3,463,681

• Date Filed

  Not available

• Date Issued

  Tuesday, August 26, 1969
  55 years ago

• CPC

  • H01L29/0661 - specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction
  • H01L21/764 - Air gaps
  • H01L23/488 - consisting of soldered or bonded constructions
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L2224/05624 - Aluminium [Al] as principal constituent
  • Y10S148/043 - Dual dielectric
  • Y10S148/049 - Equivalence and options
  • Y10S148/085 - Isolated-integrated
  • Y10S148/145 - Shaped junctions
  • Y10S438/912 - Displacing pn junction
  • Y10S438/92 - Controlling diffusion profile by oxidation

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices