3554818

Information

• Patent Grant
• 3554818

• References
• Source

• Patent Number

  3,554,818

• Date Filed

  Not available

• Date Issued

  Tuesday, January 12, 1971
  54 years ago

• CPC

  • H01L31/1035 - the devices comprising active layers formed only by AIIIBV compounds
  • G01J5/28 - using photo-emissive, photo-conductive, or photo-voltaic cells
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L23/291 - Oxides or nitrides or carbides
  • H01L24/05 - of an individual bonding area
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L2224/05552 - in top view
  • H01L2224/45144 - Gold (Au) as principal constituent
  • H01L2224/49107 - on the semiconductor or solid-state body
  • H01L2924/14 - Integrated circuits
  • Y10S148/005 - Antimonides of gallium or indium
  • Y10S148/02 - Contacts, special
  • Y10S148/022 - Controlled atmosphere
  • Y10S148/051 - Etching
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/08 - Infra-red
  • Y10S148/118 - Oxide films
  • Y10S148/12 - Photocathodes-Cs coated and solar cell

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices