3615942

Information

• Patent Grant
• 3615942

• References
• Source

• Patent Number

  3,615,942

• Date Filed

  Not available

• Date Issued

  Tuesday, October 26, 1971
  53 years ago

• CPC

  • H01L23/293 - Organic
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02129 - the material being boron or phosphorus doped silicon oxides
  • H01L21/02271 - deposition by decomposition or reaction of gaseous or vapour phase compounds
  • H01L21/02362 - formation of intermediate layers
  • H01L21/31625 - Deposition of boron or phosphorus doped silicon oxide
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S148/003 - Anneal
  • Y10S148/043 - Dual dielectric
  • Y10S148/106 - Masks, special
  • Y10S148/144 - Shallow diffusion
  • Y10S438/958 - Passivation layer

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 439 - Electrical connectors