3697336

Information

• Patent Grant
• 3697336

• References
• Source

• Patent Number

  3,697,336

• Date Filed

  Not available

• Date Issued

  Tuesday, October 10, 1972
  52 years ago

• CPC

  • H01S5/32 - comprising PN junctions
  • H01L21/02463 - Arsenides
  • H01L21/02546 - Arsenides
  • H01L21/02579 - P-type
  • H01L21/02581 - Transition metal or rare earth elements
  • H01L21/02625 - using melted materials
  • H01L21/02628 - using solutions
  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • Y10S148/026 - Deposition thru hole in mask
  • Y10S148/056 - Gallium arsenide
  • Y10S148/107 - Melt
  • Y10S438/955 - Melt-back

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 372 - Coherent light generators