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3737739
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Information
Patent Grant
3737739
References
Source
Patent Number
3,737,739
Date Filed
Not available
Date Issued
Tuesday, June 5, 1973
51 years ago
CPC
H01L29/04 - characterised by their crystalline structure
H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/0237 - Materials
H01L21/0243 - Surface structure
H01L21/02532 - Silicon, silicon germanium, germanium
H01L21/02543 - Phosphides
H01L21/02546 - Arsenides
H01L21/0262 - Reduction or decomposition of gaseous compounds
H01L21/02639 - Preparation of substrate for selective deposition
H01L21/02653 - Vapour-liquid-solid growth
H01L21/84 - the substrate being other than a semiconductor body
Y10S148/085 - Isolated-integrated
Y10S148/15 - Silicon on sapphire SOS
Y10S148/152 - Single crystal on amorphous substrate
Y10S148/17 - Vapor-liquid-solid
US Classifications
257 - Active solid-state devices
148 - Metal treatment
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