3746587

Information

• Patent Grant
• 3746587

• References
• Source

• Patent Number

  3,746,587

• Date Filed

  Not available

• Date Issued

  Tuesday, July 17, 1973
  51 years ago

• CPC

  • H01L21/3086 - characterised by the process involved to create the mask
  • H01L21/30608 - Anisotropic liquid etching
  • H01L21/3065 - Plasma etching Reactive-ion etching
  • H01L21/3081 - characterised by their composition
  • H01L21/3083 - characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S148/051 - Etching
  • Y10S148/054 - Flat sheets-substrates
  • Y10S148/085 - Isolated-integrated
  • Y10S148/115 - Orientation
  • Y10S148/145 - Shaped junctions
  • Y10S438/977 - Thinning or removal of substrate
  • Y10S438/978 - forming tapered edges on substrate or adjacent layers

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices