3852127

Information

• Patent Grant
• 3852127

• References
• Source

• Patent Number

  3,852,127

• Date Filed

  Not available

• Date Issued

  Tuesday, December 3, 1974
  50 years ago

• CPC

  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/22 - Diffusion of impurity materials
  • H01L29/73 - Bipolar junction transistors
  • Y10S148/02 - Contacts, special
  • Y10S148/036 - Diffusion, nonselective
  • Y10S148/04 - Dopants, special
  • Y10S148/041 - Doping control in crystal growth
  • Y10S148/049 - Equivalence and options
  • Y10S148/145 - Shaped junctions
  • Y10S148/151 - Simultaneous diffusion
  • Y10S148/157 - Special diffusion and profiles
  • Y10S438/965 - Shaped junction formation

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices