3886004

Information

• Patent Grant
• 3886004

• References
• Source

• Patent Number

  3,886,004

• Date Filed

  Not available

• Date Issued

  Tuesday, May 27, 1975
  49 years ago

• CPC

  • H01L21/76202 - using a local oxidation of silicon
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02238 - silicon in uncombined form
  • H01L21/02255 - formation by thermal treatment
  • H01L21/31662 - of silicon in uncombined form
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/043 - Dual dielectric
  • Y10S148/051 - Etching
  • Y10S148/085 - Isolated-integrated
  • Y10S148/106 - Masks, special
  • Y10S148/116 - Oxidation, differential
  • Y10S148/118 - Oxide films
  • Y10S148/173 - Washed emitter
  • Y10S438/911 - Differential oxidation and etching
  • Y10S438/981 - Utilizing varying dielectric thickness

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices