Oxidation, differential

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CPC
Y10S148/116

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/116Oxidation, differential

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Patents Grantslast 30 patents

Information Patent Grant
Methods for reoxidizing an oxide and for fabricating semiconductor...
- Patent number 8,790,982
- Issue date Jul 29, 2014
- Micron Technology, Inc.
- Li Li
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Structures including an at least partially reoxidized oxide material
- Patent number 8,492,851
- Issue date Jul 23, 2013
- Micron Technology, Inc.
- Li Li
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,799,690
- Issue date Sep 21, 2010
- Renesas Electronics Corporation
- Yoshikazu Tanabe
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Ion-assisted oxidation methods and the resulting structures
- Patent number 7,371,697
- Issue date May 13, 2008
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,250,376
- Issue date Jul 31, 2007
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion-assisted oxidation methods and the resulting structures
- Patent number 7,119,033
- Issue date Oct 10, 2006
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,053,007
- Issue date May 30, 2006
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures formed by ion-assisted oxidation
- Patent number 7,049,664
- Issue date May 23, 2006
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,008,880
- Issue date Mar 7, 2006
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,962,880
- Issue date Nov 8, 2005
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,962,881
- Issue date Nov 8, 2005
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,855,642
- Issue date Feb 15, 2005
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion-assisted oxidation methods and the resulting structures
- Patent number 6,770,538
- Issue date Aug 3, 2004
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a DRAM transistor with a dual gate oxide tech...
- Patent number 6,686,246
- Issue date Feb 3, 2004
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,596,650
- Issue date Jul 22, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,569,780
- Issue date May 27, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a DRAM transistor with a dual gate oxide tech...
- Patent number 6,548,340
- Issue date Apr 15, 2003
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit drive using...
- Patent number 6,528,431
- Issue date Mar 4, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,518,201
- Issue date Feb 11, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,518,202
- Issue date Feb 11, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion-assisted oxidation methods and the resulting structures
- Patent number 6,429,496
- Issue date Aug 6, 2002
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,417,114
- Issue date Jul 9, 2002
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion-assisted oxidation methods and the resulting structures
- Patent number 6,355,580
- Issue date Mar 12, 2002
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating different gate oxide thicknesses within the...
- Patent number 6,335,262
- Issue date Jan 1, 2002
- International Business Machines Corporation
- Scott W. Crowder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,239,041
- Issue date May 29, 2001
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a DRAM access transistor with dual gate oxide...
- Patent number 6,204,106
- Issue date Mar 20, 2001
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of surface leakage current by surface passivation of CdZn...
- Patent number 6,168,967
- Issue date Jan 2, 2001
- The Regents of the University of California
- Mark A. Hoffbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for poly-buffered locos without pitting formation
- Patent number 6,096,613
- Issue date Aug 1, 2000
- Acer Semiconductor Manufacturing Inc.
- Shye-Lin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential gate oxide thickness by nitrogen implantation for mixe...
- Patent number 5,920,779
- Issue date Jul 6, 1999
- United Microelectronics Corp.
- Shih-Wei Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a DRAM access transistor with dual gate oxide...
- Patent number 5,863,819
- Issue date Jan 26, 1999
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR REOXIDIZING AN OXIDE AND FOR FABRICATING SEMICONDUCTOR...
- Publication number 20130309855
- Publication date Nov 21, 2013
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION-ASSISTED OXIDATION METHODS AND THE RESULTING STRUCTURES
- Publication number 20080203542
- Publication date Aug 28, 2008
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor intergrated circuit device
- Publication number 20080045027
- Publication date Feb 21, 2008
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion-assisted oxidation methods and the resulting structures
- Publication number 20070059943
- Publication date Mar 15, 2007
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20050227501
- Publication date Oct 13, 2005
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20050208731
- Publication date Sep 22, 2005
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion-assisted oxidation methods and the resulting structures
- Publication number 20040266213
- Publication date Dec 30, 2004
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20040161945
- Publication date Aug 19, 2004
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20040157468
- Publication date Aug 12, 2004
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor intergrated circuit device
- Publication number 20040157467
- Publication date Aug 12, 2004
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20030219995
- Publication date Nov 27, 2003
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating different gate oxide thickness within the sa...
- Publication number 20030094660
- Publication date May 22, 2003
- Scott W. Crowder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion-assisted oxidation methods and the resulting structures
- Publication number 20020175382
- Publication date Nov 28, 2002
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a dram transistor with a dual gate oxide tech...
- Publication number 20020119619
- Publication date Aug 29, 2002
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion-assisted oxidation methods and the resulting structures
- Publication number 20020048888
- Publication date Apr 25, 2002
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20020009898
- Publication date Jan 24, 2002
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20020004315
- Publication date Jan 10, 2002
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20010010975
- Publication date Aug 2, 2001
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20010009813
- Publication date Jul 26, 2001
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A Method Of Fabricating A DRAM Transistor With A Dual Gate Oxide Te...
- Publication number 20010008808
- Publication date Jul 19, 2001
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20010006853
- Publication date Jul 5, 2001
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS

Oxidation, differential

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods for reoxidizing an oxide and for fabricating semiconductor...

Structures including an at least partially reoxidized oxide material

Method for fabricating semiconductor integrated circuit device

Ion-assisted oxidation methods and the resulting structures

Method for fabricating semiconductor integrated circuit device

Ion-assisted oxidation methods and the resulting structures

Method for fabricating semiconductor integrated circuit device

Semiconductor device structures formed by ion-assisted oxidation

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Ion-assisted oxidation methods and the resulting structures

Method of fabricating a DRAM transistor with a dual gate oxide tech...

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method of fabricating a DRAM transistor with a dual gate oxide tech...

Method for fabricating semiconductor integrated circuit drive using...

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Ion-assisted oxidation methods and the resulting structures

Method for fabricating semiconductor integrated circuit device

Ion-assisted oxidation methods and the resulting structures

Method for fabricating different gate oxide thicknesses within the...

Method for fabricating semiconductor integrated circuit device

Method of fabricating a DRAM access transistor with dual gate oxide...

Reduction of surface leakage current by surface passivation of CdZn...

Method for poly-buffered locos without pitting formation

Differential gate oxide thickness by nitrogen implantation for mixe...

Method of fabricating a DRAM access transistor with dual gate oxide...

Patents Applicationslast 30 patents

METHODS FOR REOXIDIZING AN OXIDE AND FOR FABRICATING SEMICONDUCTOR...

ION-ASSISTED OXIDATION METHODS AND THE RESULTING STRUCTURES

Method for fabricating semiconductor intergrated circuit device

Ion-assisted oxidation methods and the resulting structures

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Ion-assisted oxidation methods and the resulting structures

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor intergrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating different gate oxide thickness within the sa...

Ion-assisted oxidation methods and the resulting structures

Method of fabricating a dram transistor with a dual gate oxide tech...

Ion-assisted oxidation methods and the resulting structures

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

A Method Of Fabricating A DRAM Transistor With A Dual Gate Oxide Te...

Method for fabricating semiconductor integrated circuit device