3895390

Information

• Patent Grant
• 3895390

• References
• Source

• Patent Number

  3,895,390

• Date Filed

  Not available

• Date Issued

  Tuesday, July 15, 1975
  49 years ago

• CPC

  • H01L29/7816 - Lateral DMOS transistors
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/033 - comprising inorganic layers
  • H01L29/513 - the variation being perpendicular to the channel plane
  • H01L29/518 - the insulating material containing nitrogen
  • H01L29/7801 - DMOS transistors
  • H01L29/511 - with a compositional variation
  • Y10S148/151 - Simultaneous diffusion
  • Y10S148/167 - Two diffusions in one hole

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process