Claims
- 1. A method of forming a film on a wafer, comprising the steps of:depositing a soot on a wafer to form a sample; sealing said sample inside a chamber of a microwave sintering furnace and surrounding said sample with an insulating material inside said chamber; applying microwave radiation to said sample surrounded by said insulating material inside said chamber of said microwave sintering furnace to heat said sample by internal volumetric heating; controlling a temperature of said sample by measuring a temperature within a portion of said chamber that is surrounded by said insulating material to provide a measured temperature and controlling said applying of said microwave radiation based upon the measured temperature to maintain a desired temperature for a predetermined amount of time; and allowing said sample to cool.
- 2. The method of claim 1, further comprising the step of placing said sample inside said insulating material before said step of applying microwave radiation.
- 3. The method of claim 1, further comprised of said soot being a silica soot.
- 4. The method of claim 1, further comprised of said step of depositing a soot comprising a flame hydrolysis deposition method.
- 5. The method of claim 1, further comprising the step of:repeating said steps of depositing a soot, applying microwave radiation, controlling a temperature of said sample and allowing said sample to cool to produce a plurality of layers of film on said wafer.
- 6. A method of forming a film on a wafer, comprising the steps of:depositing a soot on a wafer to form a sample; sealing said sample inside a chamber of a microwave sintering furnace and surrounding said sample with an insulating material inside said chamber; applying microwave radiation to said sample surrounded by said insulating material inside said chamber of said microwave sintering furnace to heat said sample by internal volumetric heating; controlling a temperature of said sample for a predetermined amount of time, said step of controlling the temperature of said sample comprising the steps of: measuring a temperature within a portion of said chamber that is surrounded by said insulating material to provide a measured temperature; determining an error temperature as a difference between the measured temperature and a desired temperature; and modifying said microwave radiation applied by selectively adding and subtracting power from a current power level according to a function of the error temperature; and allowing said sample to cool.
- 7. The method of claim 4, further comprised of said flame hydrolysis deposition method comprising the step of:exposing said wafer to a flame including any one of SiCl4, BCl3, POCl3 and GeCl4.
- 8. The method of claim 6, further comprised of said step of allowing said sample to cool comprising allowing said sample to cool to room temperature.
- 9. The method of claim 1, further comprised of said steps of applying microwave radiation and controlling a temperature of said sample being performed until particles of the soot are firmly combined with one another.
- 10. The method of claim 1, further comprised of said insulating material being a heat-resistant high temperature ceramic.
- 11. A method of forming a film on a wafer, comprising the steps of:depositing a soot on a wafer to form a sample; placing said sample in a microwave sintering furnace; surrounding said sample with an insulating material inside said microwave sintering furnace; applying microwave radiation to said sample surrounded by said insulating material inside said microwave sintering furnace to heat said sample by internal volumetric heating; controlling a temperature of said sample by measuring a temperature within a portion of said microwave sintering furnace that is surrounded by said insulating material to provide a measured temperature and controlling said applying of said microwave radiation based upon the measured temperature to maintain a desired temperature for a predetermined amount of time; and allowing said sample to cool.
- 12. The method of claim 11, further comprised of said measuring a temperature to provide the measured temperature comprising using a temperature sensor located inside said portion of said microwave sintering furnace that is surrounded by said insulating material.
- 13. The method of claim 11, further comprised of said step of applying microwave radiation further comprising the step of controlling an atmosphere inside said microwave sintering furnace.
- 14. The method of claim 13, further comprised of said step of controlling the atmosphere comprising evacuating said microwave sintering furnace.
Priority Claims (1)
Number |
Date |
Country |
Kind |
97-82049 |
Dec 1997 |
KR |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a divisional application of applicant's Ser. No. 09/223,718 filed in the U.S. Patent & Trademark Office on Dec. 31, 1998, and assigned to the assignee of the present invention.
US Referenced Citations (14)
Foreign Referenced Citations (6)
Number |
Date |
Country |
0092346 |
Oct 1983 |
EP |
2106709 |
Apr 1983 |
GB |
WO9312629 |
Jun 1993 |
GB |
3-22430 |
Jan 1991 |
JP |
3-72656 |
Mar 1991 |
JP |
4-93029 |
Mar 1992 |
JP |