The present disclosure relates to a cleaning apparatus and method, and more particularly to a cleaning apparatus and method for removing residues from a chip-stacked structure.
A general three-dimensional integrated circuit packaging process includes four major steps: via formation, via filling, wafer thinning, and wafer bonding. A cleaning step must be performed before and after each of the four processing steps to avoid contamination of the wafer during processing thereof. Furthermore, the step of wafer bonding can be roughly divided into three types: chip to wafer (C2W), chip to chip (C2C), and wafer to wafer (W2W). However, a gap either formed between the wafers or formed between the wafer and the chip is usually 20 to 50 μm. Therefore, how to effectively remove the residues in such a tiny gap is a technical bottleneck and challenge that urgently need to be overcome.
Taiwan Patent Publication No. TW 1539515 has disclosed a cleaning method of chip-stacked structure and cleaning apparatus that can remove a flux or other impurities in a tiny gap between a wafer and a chip. In this patent publication, a roller-type or a brush-type sliding structure is provided at a bottom of a liquid suction device, so that the liquid suction device can slide on the substrate by the sliding structure to move to a cleaning position. The liquid suction device exerts a downward pressure on the chip-stacked structure, which easily causes damage or breakage to chip of the chip-stacked structure.
Accordingly, it is necessary to provide a cleaning apparatus and method to solve the technical problem in the prior art.
In order to solve technical problems mentioned above, an object of the present disclosure is to provide a cleaning apparatus and method in which the cleaning apparatus cleans the chip-stacked structure in a non-contact manner, thereby avoiding the problem of chip damage caused by applying a downward pressure to the chip-stacked structure.
In order to achieve the objects described above, the present disclosure provides a cleaning apparatus for removing residue from a chip-stacked structure, the chip-stacked structure including a substrate and a plurality of chips, a gap being defined between the chips being separated and the substrate, and the residue being located in the gap, the cleaning apparatus including:
a platform configured to place the chip-stacked structure thereon;
a liquid supply device configured to provide a chemical liquid;
a gas supply device configured to provide a gas; and
a two-fluid nozzle movable relative to the platform to reach a position in alignment with an interval between two adjacent chips,
where the two-fluid nozzle is connected to the liquid supply device and the gas supply device and configured to apply a gas-liquid mixture including the chemical liquid and the gas to the substrate of the chip-stacked structure, such that the gas-liquid mixture flows into the gap along a first side of the gap; and
where the residue in the gap is separated from its attached surface by the chemical liquid of the gas-liquid mixture, and an impact force exerted by the gas of the gas-liquid mixture causes the residue to be carried out of the gap through a second side of the gap.
In one preferable embodiment of the present disclosure, the cleaning apparatus further includes a precise driving device configured to control the two-fluid nozzle to move along a vertical direction and a horizontal direction with respect to the platform.
In one preferable embodiment of the present disclosure, the precise driving device includes a vertical lifting mechanism configured to control the two-fluid nozzle to move along the vertical direction with respect to the platform, and the vertical lifting mechanism includes a stepper motor.
In one preferable embodiment of the present disclosure, the precise driving device includes a horizontal moving mechanism configured to control the two-fluid nozzle to move along the horizontal direction with respect to the platform, and the horizontal moving mechanism includes an X-Y table.
In one preferable embodiment of the present disclosure, the cleaning apparatus further includes a chamber, where the platform and the two-fluid nozzle are disposed in the chamber, and an extraction opening is provided at a bottom of the chamber.
In one preferable embodiment of the present disclosure, the cleaning apparatus further includes a gas-liquid separation device, where the gas-liquid separation device is connected to the extraction opening of the chamber for gas-liquid separation of the gas-liquid mixture which is extracted through the extraction opening.
In one preferable embodiment of the present disclosure, the gas supply device includes a heater configured to heat the gas in the gas supply device to a temperature substantially the same as a temperature of the chemical liquid.
In one preferable embodiment of the present disclosure, the gas supply device includes a humidifier configured to increase humidity of the gas in the gas supply device.
In one preferable embodiment of the present disclosure, the platform includes another heater configured to heat the chip-stacked structure on the platform to maintain it at a processing temperature.
In one preferable embodiment of the present disclosure, the cleaning apparatus includes a plurality of two-fluid nozzles arranged in a row in a side-by-side manner, and the plurality of two-fluid nozzles are movable relative to the platform to reach a position in alignment with an interval between two adjacent rows of chips.
In one preferable embodiment of the present disclosure, a front end of the two-fluid nozzle of the cleaning apparatus is formed at an angle with respect to a surface of the chip-stacked structure to be cleaned.
In one preferable embodiment of the present disclosure, the two-fluid nozzle includes a high-pressure cleaning nozzle.
The present disclosure also provides a cleaning method, performed by a cleaning apparatus which includes a platform, a liquid supply device, a gas supply device, a two-fluid nozzle, and a precise driving device, and the cleaning method used for removing residue from a chip-stacked structure, and the chip-stacked structure including a substrate and a plurality of chips, a gap being defined between the chips and the substrate, and the residue being located in the gap, the cleaning method including:
placing the chip-stacked structure on the platform;
controlling the precise driving device to move the two-fluid nozzle to reach a position in alignment with an interval between two adjacent chips;
providing a chemical liquid to the two-fluid nozzle by the liquid supply device, and providing a gas to the two-fluid nozzle by the gas supply device;
applying a gas-liquid mixture including the chemical liquid and the gas to the substrate of the chip-stacked structure, such that the gas-liquid mixture flows into the gap along a first side of the gap, where the residue in the gap is separated from its attached surface by the chemical liquid of the gas-liquid mixture, and an impact force exerted by the gas of the gas-liquid mixture causes the residue to be carried out of the gap through a second side of the gap.
In one preferable embodiment of the present disclosure, after the chip-stacked structure is placed on the platform, the cleaning method further includes: controlling a horizontal movement of the two-fluid nozzle over the platform by a horizontal moving mechanism of the precise driving device, and controlling the two-fluid nozzle to move along a vertical direction with respect to the platform by a vertical lifting mechanism of the precise driving device to align the two-fluid nozzle with the first side of the gap.
In one preferable embodiment of the present disclosure, the horizontal moving mechanism includes an X-Y table.
In one preferable embodiment of the present disclosure, the cleaning apparatus further includes a chamber and a gas-liquid separation device, where an extraction opening is provided at a bottom of the chamber, and the gas-liquid separation device is connected with the extraction opening of the chamber, and the cleaning method also includes: performing gas-liquid separation of the gas-liquid mixture which is extracted through the extraction opening by the gas-liquid separation device.
In one preferable embodiment of the present disclosure, the gas supply device of the cleaning apparatus further includes a heater, and before the gas supply device provides a gas to the two-fluid nozzle, the cleaning method further includes: heating the gas in the gas supply device to a temperature substantially the same as a temperature of the chemical liquid by the heater.
In one preferable embodiment of the present disclosure, the gas supply device of the cleaning apparatus further includes a humidifier, and before the gas supply device provides a gas to the two-fluid nozzle, the cleaning method further includes: increasing humidity of the gas in the gas supply device by the humidifier.
In one preferable embodiment of the present disclosure, the platform of the cleaning apparatus further includes another heater, and the cleaning method further includes: heating the chip-stacked structure on the platform by the heater to maintain it at a processing temperature.
In one preferable embodiment of the present disclosure, after the residue in the gap is removed by the gas-liquid mixture, the cleaning method further includes:
providing a cleaning liquid to the two-fluid nozzle by the liquid supply device; and
spraying the cleaning liquid on the chip-stacked structure by the two-fluid nozzle to remove the gas-liquid mixture on the chip-stacked structure.
In one preferable embodiment of the present disclosure, after the residue in the gap is removed by the gas-liquid mixture, the cleaning method further includes: spraying a cleaning liquid on a back side of the substrate to remove the gas-liquid mixture on the back side of the substrate.
In one preferable embodiment of the present disclosure, after the residue in the gap is removed by the gas-liquid mixture, the cleaning method further includes: spraying a volatile solvent and a drying gas on the chip-stacked structure to remove moisture from a surface of the chip-stacked structure.
In one preferable embodiment of the present disclosure, after the residue in the gap is removed by the gas-liquid mixture, the cleaning method further includes: placing the chip-stacked structure in an oven to remove moisture from a surface of the chip-stacked structure.
In comparison to prior art, the present disclosure uses a two-fluid nozzle to apply a gas-liquid mixture to a chip-stacked structure in a cleaning apparatus, and cleans a residue on the chip-stacked structure by the gas-liquid mixture. Upon cleaning, a chemical liquid of the gas-liquid mixture separates the residue in the gap from its attached surface, and an impact force exerted by a gas of the gas-liquid mixture causes the residue to be carried out of the gap through a second side of the gap. By this design, the present disclosure can achieve a non-contact cleaning of the chip-stacked structure, thereby avoiding the problem of chip damage caused by applying a downward pressure on the chip-stacked structure.
The structure and the technical means adopted by the present disclosure to achieve the above and other objects can be best understood by referring to the following detailed description of the preferred embodiments and the accompanying drawings.
A chip of a microprocessor includes a logic unit and a plurality of cache memories. If both the logic unit and the cache memories are configured in a two-dimensional (2-D) arrangement, a physical size of the chip will limit the number of the cache memories (due to poor processing of the large chips), thereby limiting performance of the microprocessor. In order to solve the problem of the 2-D arrangement of the chip, a three-dimensional (3D) integrated circuit is being actively developed. In general, a typical 3D-IC packaging process includes four steps: via formation, via filling, wafer thinning, and wafer bonding. A cleaning step must be performed before and after each of the four processing steps to avoid contamination of the wafer during processing thereof. Furthermore, the step of wafer bonding can be roughly divided into three types: chip to wafer (C2W), chip to chip (C2C), and wafer to wafer (W2W). However, a gap either formed between the wafers or formed between the wafer and the chip is usually 20 to 50 μm. The cleaning apparatus and cleaning method of the present disclosure can achieve the removal the residues in such a tiny gap.
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It is an object of the present disclosure to provide a cleaning apparatus and method in which the cleaning apparatus 1 cleans the chip-stacked structure 2 in a non-contact manner, thereby avoiding the problem of damage of chip 21 of the chip-stacked structure 2 caused by applying a downward pressure on the chip-stacked structure 2. Part of the steps of the cleaning method of the present disclosure is performed by the cleaning apparatus 1, where the specific steps of the cleaning method are described in detail later with the cleaning apparatus 1 described above.
The cleaning method of the present disclosure includes the following steps. First, referring to
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In the present disclosure, the liquid supply device 120 may provide a cleaning liquid such as pure water, deionized water or the like in addition to the chemical liquid 123. Also, after the residue 25 in the gap 23 is removed by the gas-liquid mixture 150, the liquid supply device 120 can be switched to provide the cleaning liquid to the two-fluid nozzle 140, so that the two-fluid nozzle 140 sprays the cleaning liquid to the chip-stacked structure 2 to remove the gas-liquid mixture 150 on the chip-stacked structure 2.
On the other hand, as shown in
After removing the residue 25 in the gap 23 of the chip-stacked structure 2, the chip-stacked structure 2 is moved into a drying apparatus to perform final cleaning and drying steps on the chip-stacked structure 2. Referring to
After front and back sides of the chip-stacked structure 2 are cleaned, the volatile solvent and the drying gas are simultaneously supplied to the chip-stacked structure 2 through the two-fluid nozzle 330 to remove moisture on the surface of the chip-stacked structure 2, where the volatile solvent can be isopropyl alcohol (IPA), and the drying gas can be nitrogen. Alternatively, after the front and back sides of the chip-stacked structure 2 are cleaned, the chip-stacked structure 2 may be placed in an oven to remove moisture on the surface of the chip-stacked structure 2, and is not limited thereto.
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In summary, the present disclosure uses a two-fluid nozzle to apply a gas-liquid mixture to a chip-stacked structure in a cleaning apparatus, and cleans a residue on the chip-stacked structure by the gas-liquid mixture. Upon cleaning, a chemical liquid of the gas-liquid mixture separates the residue in the gap from its attached surface, and an impact force exerted by a gas of the gas-liquid mixture causes the residue to be carried out of the gap through a second side of the gap. The present disclosure adopts the two-fluid nozzle to apply the gas-liquid mixture to the chip-stacked structure, and a high pressure cleaning (HPC) nozzle can also be used to apply high pressure fluid to the chip-stacked structure, and the residue in the gap of the chip-stacked structure can be removed by the high pressure fluid. During cleaning, the high pressure liquid separates the residue in the gap from its attached surface, and an impact force exerted by the high pressure liquid causes the residue to be carried out of the gap through the second side of the gap. By this design, the present disclosure can achieve a non-contact cleaning of the chip-stacked structure, thereby avoiding the problem of chip damage caused by applying a downward pressure on the chip-stacked structure.
The above descriptions are merely preferable embodiments of the present disclosure, and are not intended to limit the scope of the present disclosure. Any modification or replacement made by those skilled in the art without departing from the spirit and principle of the present disclosure should fall within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure is subject to the appended claims.
Number | Date | Country | Kind |
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107141172 | Nov 2018 | TW | national |