Patent Application
20190259583
The present invention lies in the field of surface treatment and deposition of functional transition metal oxide coatings. More particularly, the invention is directed to the field of atmospheric pressure plasma enhanced chemical vapour deposition on heat-sensitive substrate at low temperature. A post-discharge plasma device is disclosed as well as the method employing such device.
Atmospheric pressure plasma enhanced chemical vapour deposition of metal oxide on substrate is usually performed at high temperatures in order to obtain crystalline coatings.
US patent application published US 2007/0212486 A1 discloses method of plasma enhanced chemical vapour deposition of metal oxide, notably of zinc oxide, on plastic substrate. The plastic is maintained at a temperature near its glass-transition temperature (Tg), preferably at a temperature not exceeding 50° C. The method is carried out at or near atmospheric pressure (760 Torr), typically in the range of 700-800 Torr. However, the chemical vapour deposition is performed thanks to a corona discharge or thanks to a dielectric barrier discharge.
The work of Davis M. J. et al., entitled “Atmospheric-pressure plasma-enhanced chemical vapour deposition (AP-PECVD) for growth of thin films at low temperature” used an audio-frequency glow discharge plasma reactor in order to deposit thin film of titanium dioxide on glass and plastic. They have obtained a granular film with grain sizes ranging from about 50-300 nm. However, XRD (X-Ray Diffraction) analysis shows that the deposited films are amorphous.
The invention has for a technical problem to alleviate at least one of the drawbacks present in the prior art.
In particular, the invention proposes a solution to deposit a crystalline coating onto heat-sensitive substrate.
The first object of the invention is directed to a plasma post-discharge deposition device for depositing crystalline metal oxide derivative on a substrate, the device comprising (a) a gas source with a substrate inlet, (b) a post-discharge deposition chamber with a substrate outlet, the substrate inlet and the substrate outlet defining a longitudinal central axis, and (c) a dielectric tube placed between the gas source and the deposition chamber on the longitudinal central axis; the dielectric tube being configured to confine a plasma discharge and comprising a discharge zone lying on the internal surface of the dielectric tube and a central zone centred on the longitudinal central axis. The plasma post-discharge deposition device is remarkable in that the central zone is located at a distance comprised between 1 mm and 2.5 mm from the internal surface of the dielectric tube.
According to various embodiments, the central zone has a temperature inferior or equal to 150° C. configured for activating the surface of a substrate-to-be-coated, in various instances a temperature inferior to 100° C.
According to various embodiments, the dielectric tube is a discharge tube in quartz, Pyrex™, alumina, silica, or any dielectric material, in various instances in quartz.
According to various embodiments, the dielectric tube is surrounded by a surface wave launcher configured to generate the plasma discharge.
According to various embodiments, the surface wave launcher is a microwave surface wave launcher with a frequency comprised between 300 MHz and 300 GHz, in various instances with a frequency of 2.45 GHz.
According to various embodiments, the post-discharge deposition chamber is located at a distance comprised between 0.5 cm and 20 cm from the surface wave launcher, in various instances at a distance of 6 cm.
According to various embodiments, the gas source is configured to inject a gas into the surface wave launcher, the gas being in various instances argon, helium, krypton, xenon, nitrogen, hydrogen, oxygen and/or any combination thereof.
According to various embodiments, the device further comprises a chemical precursor source placed in the post-discharge region of the device and configured to deliver a chemical precursor onto the plasma-activated surface of a substrate, the chemical precursor being in various instances a crystalline metal oxide derivative precursor, for example a crystalline metal oxide derivative precursor mixed-up with pre-formed metallic nanoparticles and/or mixed-up with a chemical precursor for doping.
According to various embodiments, the chemical precursor source is connected to an atomising arrangement configured to deliver a chemical precursor in the form of a mist and/or an aerosol, the atomising arrangement being in various instances an ultrasonic system.
According to various embodiments, the gas source further comprises a metal nanoparticles precursor delivery system configured to deliver metal nanoparticles precursor into the gas, the metal nanoparticles precursor being more in various instances silver, palladium, platinum or gold nanoparticles precursor.
The second object of the invention is directed to a plasma-enhanced chemical vapour deposition method, comprising the steps of (a) activating a substrate in a plasma post-discharge deposition device so as to produce a plasma-activated substrate; and (b) functionalizing the plasma-activated substrate by a reagent in the post-discharge zone of the plasma post-discharge deposition device. The method is remarkable in that the plasma post-discharge deposition device is a plasma post-discharge deposition device in accordance with the first object of the invention.
According to various embodiments, the plasma-enhanced chemical vapour deposition is carried out at atmospheric pressure and/or at a temperature which is inferior or equal to 150° C., in various instances a temperature inferior to 100° C.
According to various embodiments, the substrate is a heat-sensitive substrate.
According to various embodiments, the substrate is a one-dimensional substrate or a two-dimensional substrate.
According to various embodiments, the reagent is a crystalline metal oxide derivative, in various instances TiO2, ZnO, WO3, or a doped crystalline metal oxide derivative, in various instances TiO2 doped with boron, or a mixture of metallic nanoparticles with a crystalline metal oxide derivative.
In general, the particular embodiments of each object of the invention are also applicable to other objects of the invention. Each object of the invention can also be combined with other objects of the invention insofar as possible.
The invention is particularly interesting in that the deposition of the metal oxide derivative can be achieved on heat-sensitive substrates, such as polymers, plastics and/or glass, without deteriorating those substrates. The deposited metal oxide layers are crystalline and the coating by itself can be achieved at a temperature inferior to 150° C., even inferior to 100° C. The crystallinity of the coated layers permits the use of those coated surfaces in photocatalytic, photovoltaic or sensing applications.
Moreover, due to the tubular configuration of the reactor, the coating of one-dimensional substrates, such as, for example optical fibres with layers of crystalline metal oxide derivatives, is allowed.
The device 100 comprises a substrate inlet 102 that is configured for introducing a substrate 112. The substrate 112 goes through the system composed of a surface wave launcher 106, or an electromagnetic surface wave launcher, and a dielectric tube 108. Once the substrate 112 has been activated by the plasma, or plasma-activated, it goes through the deposition chamber, or post discharge chamber 110, where the plasma excited species, the chemical precursor and the substrate surface react to produce a coating on the substrate surface. Once the reaction has been performed, the coated substrate 112 is picked up in the substrate outlet 104.
The post-discharge zone of the device 100 is located beyond the launching gap 140 of the electromagnetic surface wave launcher 106 in the side of the deposition chamber 110.
As it is apparent on
The surface wave launcher 106 is in various instances an electromagnetic surface wave launcher of the type Surfatron.
Nevertheless, it is to be understood that any microwave system able to ignite and sustain plasma at atmospheric pressure might be employed. For example, Beenakker resonator, surfaguide, metallic microwave plasma torches or semi-metallic microwave plasma torches might be employed.
The frequency of the microwave surface wave launcher is comprised between 300 MHz and 300 GHz.
The tube 108 is a dielectric tube that is designed for confining the plasma discharge generated by the electromagnetic surface wave launcher 106. This dielectric tube 108 is also called the discharge tube and is low loss, high temperature-resistant dielectric such as fused silica, quartz, Pyrex™, ceramic, alumina or silica, in various instances in quartz. The distal end of the discharge tube 108 ends inside a deposition chamber 110. The post-discharge deposition chamber 110 is therefore located in the post-discharge region of the device 100 at a distance between 0.5 cm and 20 cm from the electromagnetic surface wave launcher (106; 206), in various instances at a distance of 6 cm.
The inner diameter of the discharge tube 108 is comprised between 1 and 100 mm, in various instances 5 mm.
The outer diameter of the discharge tube 108 is comprised between 3 mm and 103 mm, in various instances 7 mm.
The electromagnetic surface wave launcher 106 is working thanks to its connection with a power supply 114. When Surfatron is used, the frequency of the power supply 114 is comprised between 2.43 GHz and 2.47 GHz, in various instances equal to 2.45 GHz. It operates in continuous mode with a power comprised between 20 and 300 W, in various instances 200 W.
The electromagnetic surface wave launcher 106 is used to produce the surface-wave discharge by application of a high-frequency electric field. The discharge is generated at atmospheric pressure inside the discharge tube 108.
In order to generate the plasma, the electromagnetic surface wave launcher 106 must be connected to a gas source 116. The arrow at the inlet 122 of the gas source 116 on
The gas flow at the gas source 116 is comprised between 1 and 100 standard litres per minute (slm), for example 10 slm by a flow controller (not shown).
The following part of the description will describe the arrangement designed for delivering the chemical precursor onto the plasma-activated substrate 112.
The deposition chamber 110 in the post-discharge region of the device 100 is configured to receive the distal end of the discharge tube 108.
Additionally to the substrate outlet 104, the (post-discharge) deposition chamber 110 comprises an inlet 124 and an outlet 126.
The outlet 126 is used as an exhaust of the deposition chamber 110.
A chemical precursor source 118 present under the form of a solid, liquid or gaseous source, in various instances liquid, is injected in the post-discharge region of the device 100 and reacts with plasma-excited gas species to synthesise a coating on the substrate surface.
The chemical precursor, in various instances in a liquid form, may be under the form of a mist and/or an aerosol. For this, it may pass through an atomising arrangement 120 that is located between the chemical precursor source 118 and the (post-discharge) deposition chamber 110.
The atomising arrangement 120 is in various instances an ultrasonic system.
The ultrasonic system comprises an ultrasonic nozzle 132 adapted for spraying the chemical precursor into a mist and/or an aerosol that will be carried into the (post-discharge) deposition chamber 110 and on the plasma-activated substrate 112 with carrier gases, such as argon and/or oxygen. The flow of the carrier gas is comprised between 0.1 and 10 slm, in various instances 1 slm and is indicated on
The ultrasonic system 120 is working thanks to an ultrasonic generator 130, in various instances an ultrasonic generator from Sono-Tek that operates at a frequency of 120 kHz.
The mist and/or the aerosol are generally composed of droplets with diameters ranging between 1 μm and 100 μm, in various instances between 10 μm and 20 μm.
The chemical precursor can be a metal precursor.
The metal precursor can be any metal precursor, in various instances a metal halide, a metal nitrate or any organometallic compounds.
The metal precursor can be any metal precursor, in various instances a titanium precursor, a tungsten precursor, a zirconium precursor, a zinc precursor, a vanadium precursor, a hafnium precursor, a tantalum precursor, a molybdenum precursor or a niobium precursor.
An example of commonly used titanium precursor is titanium ethoxide (Ti(OC2H5)4).
Titanium(IV) isopropoxide (TTIP), (Ti[OCH(CH3)2]4), titanium(IV) chloride (TiCl4), titanium(IV) butoxide (Ti(OCH2CH2CH2CH3)4), titanium diisopropoxide bis(acetylacetonate) ([(CH3)2CHO]2Ti(C5H7O2)2) or titanium ethoxide (Ti(OC2H5)4) can be used to deposit a crystalline layer of TiO2 for photocatalysis, self-cleaning surfaces or gas sensing applications.
Tungsten hexaphenoxide (W(OPh)6), tungsten hexacarbonyl (W(CO)6), or tungsten(VI) chloride (WCl6) can be used to deposit a crystalline layer of WO3 for water splitting or gas sensing applications.
Zirconium acetylacetonate (Zr(acac)4), zirconium(IV) acetate or zirconium(IV) chloride (ZrCl4) can be used to deposit a crystalline layer of ZrO2 for fuel cells, gas sensing, catalysis or antimicrobial coatings applications.
Zinc acetate ((CH3CO2)2Zn), zinc acetylacetonate (Zn(acac)2) or zinc chloride (ZnCl2) can be used to deposit a crystalline layer of ZnO for gas sensing, photocatalysis, piezoelectric transducers or light-emitting devices.
Vanadium(V) oxytripropoxide (VO(OCH2CH2CH2CH3)3), vanadium (III) acetylacetonate (V(C5H7O2)3), vanadium(IV)-oxyacetylacetonate (OV(C5H7O2)2) or vanadium(III) chloride (VCl3) can be used to deposit a crystalline layer of V2O5 as electrochemical capacitors or cathode for rechargeable lithium ion batteries.
Hafnium(IV) chloride (HfCl4) or hafnium(IV) oxychloride (HfOCl2) can be used to deposit a crystalline layer of HfO2 for gas sensing, protective coatings, anti-reflection coatings and dielectric materials applications.
Tantalum(V) ethoxide (Ta(OC2H5)5) can be used to deposit a crystalline layer of Ta2O5 for gas sensing, anti-reflection coatings or piezoelectric materials.
Molybdenum hexacarbonyl (Mo(CO)6) can be used to deposit a crystalline layer of MoO3 for photocatalysis, gas sensing or capacitors applications.
Niobium(V) chloride (NbCl5) can be used to deposit a crystalline layer of Nb2O5 for gas sensing, anti-reflection coatings or piezoelectric applications.
Alternatively, the metal precursor can be doped, for example with boron for TiO2, molybdenum for WO3, manganese for ZrO2 and aluminium for ZnO.
Suitable chemical precursors for the doping of TiO2 with boron can be used. It aims to enhance the photocatalytic properties and to expand the response of TiO2 anatase to visible light region of the spectrum. Such boron derivatives could be triethyl borate ((C2H5O)3B) and/or trimethyl borate (B(OCH3)3). Trimethyl borate can be advantageously used in order to reduce the formation of powder due to its poor reactivity.
Boric acid (H3BO3) has been reported previously as a convenient boron precursor for the deposition of doped TiO2 thin films, stimulating the growth of larger agglomerations of TiO2 crystals by generating a more acidic pH when the reaction takes place.
Triethyl borate ((C2H5O)3B) and TTIP, which can be used to grow boron-doped TiO2 thin films with enhanced conductivity can be used.
TiCl4 and trimethyl borate (B(OCH3)3, which can be employed to grow boron-doped TiO2 for enhanced photocatalytic activity can be used.
Boric acid (H3BO3) and titanium tetraethoxide, which can be employed for the deposition of boron-doped TiO2 thin films in terms of enhancing the photoactivity and the visible light response of TiO2 can be used.
Nitrogen has been proved to be an effective dopant for TiO2 thin films. The doping with nitrogen by AP-PECVD in the reactor, could be carried out by injecting a small flow of nitrogen gas through the plasma generating gas (Ar, in this case), and by changing the amount of N2 gas which is injected, different concentrations of the dopant can be achieved for the synthesis of N—TiO2 thin films.
TTIP and NH3 as a reactive doping gas can be used for the growth of N-doped TiO2 thin films for visible light photocatalytic activity.
Tungsten ethoxide [W(OEt)6] and TTIP for the deposition tungsten-doped TiO2 coatings with enhanced photocatalytic and opto-electrical properties can be used.
Vanadium tetrachloride (VCl4) or vanadyl acetylacetonate [C10H14O5V] and titanium butoxide (TBOT) can be used for the synthesis of vanadium-doped TiO2 for visible-light photocatalysis.
Cr- or Fe-ion-doped TiO2 for enhanced water splitting performances can be grown by titanium butoxide [Ti(OC4H9)4] and chromium nitrate [Cr(NO3)3] or ferrous nitrate [Fe(NO3)3].
Silver nitrate (AgNO3) and TIP, which are employed for the deposition of thin films of Ag—TiO2 with enhanced antibacterial properties, can be used.
Thiourea (CH4N2S) and TTIP are used for the synthesis of S—TiO2 with visible light response and enhanced photoactivity can be used.
TBOT [Ti(OCH2CH2CH2CH3)4] and ethanol to grow C—TiO2 can be used for improving the rates of degradation of NOx in wastewater.
Sucrose (C12H22O11) and TiCl4 for the synthesis of doped C—TiO2 with high electrochemical performances for sodium-ion batteries can be used.
Multifunctional (conducting and photoactive simultaneously) P-doped TiO2 can be grown by triethyl phosphate [(C2H5O)3PO] and TiCl4.
Nickel nitrate [Ni(NO3)2] and TiCl4, which can be employed synthesizing Ni—TiO2 for photocurrent and photocatalytic applications.
Alternatively, the metal precursor can contain metallic nanoparticles of another metal in order to coat a layer of nanocomposite onto the substrate 112.
More specifically, the metallic nanoparticles can be silver, platinum or gold nanoparticles.
The metal precursor flow rate, controlled by a syringe pump (118, 218), is comprised between 0.1 and 100 μL·min−1, in various instances fixed at 10 μL·min−1 in order to limit the excessive formation of powders in the gas phase tha is detrimental for the thin film deposition.
The electromagnetic surface wave launcher 106 is particularly adapted for performing atmospheric pressure plasma-enhanced chemical vapour deposition (AP-PECVD) at low substrate temperature for the deposition of anatase (TiO2) on substrates 112, the substrates 112 being one-dimensional substrates or two-dimensional substrates.
Advantageously, the substrates 112 can be heat-sensitive substrates.
One-dimensional substrates are wires, tubes, fibres, optical fibres, pipes, cables, cords, strings, ropes, filaments, threads, or ribbons.
Two-dimensional substrates are wafers, for example silicon wafers.
The substrates 112 are made of non-metallic and non-conductive materials, such as polymers and/or glass.
On the inner surface of the discharge tube 108, filamentary discharges 134 are formed. Filamentary discharge zones 136, are thus formed on the inner surface of the discharge tube 108. This phenomenon is well known from the literature (see Schluter H. et al., Physics Reports, 2007, 443, 121-255).
The active part of the plasma close to the inner wall of the dielectric tube zones 136 has a high electron density and high ion density. This provides a high capacity of producing excited/active gaseous species. However, the active part of the plasma in the centre of the discharge tube, or central zone 138, is less reactive because of the drop of electron density and lower temperature.
The substrate 112 is introduced, directed, guided, held and/or maintained in the central zone 138 of the plasma thanks to holding means composing the substrate inlet 102 and the substrate outlet 104. The holding means are configured to hold the substrate 112 in a zone corresponding to a region located at the centre of the discharge tube 108, in particular at the centre of the central zone 138. In this way, the substrate inlet 102 and the substrate outlet 104, in particular the holding means present on the inlet 102 and the outlet 104, prevent the substrate 112 to end up in the filamentary discharge zones 136. This protects the substrates from the high temperature of these zones. This aspect is very valuable when heat-sensitive substrates 112, such as polymers and/or plastics, are to be coated.
The central zone (138) in which the (heat-sensitive) substrate 112 must be introduced, directed, guided, held and/or maintained is located at a minimal distance of 1 mm from the internal surface of the dielectric tube (108; 208). The maximum distance from the internal surface of the dielectric tube (108; 208) is 2.5 mm.
In order to ensure the adhesion of the metal oxide derivative on the substrate 112, the injection of the mist of the metal precursor is performed in the post-discharge region of the electromagnetic surface wave launcher 106 which is at a distance comprises between 0.5 cm and 20 cm from the launching gap 140, in various instances at a distance of 6 cm from the launching gap 140.
By introducing the mist of the metal precursor in the post-discharge region, not only the adhesion of the metal oxide coating onto the substrate 112 is improved, but also the density and the crystallinity of the layer is enhanced.
The device 200 illustrated on
The gas source 216 is connected, through the inlet 222, to nanoparticles precursor delivery system 248, in various instances set up in a syringe pump, and similar to the chemical precursor source 218. The nanoparticles precursor delivery system 248 is configured to deliver a nanoparticles precursor onto the yet non-activated surface of the substrate 212 through the inlet 222 of the gas source 216.
The nanoparticles precursor may be under the form of a mist and/or an aerosol and/or vapour. For this, it may pass through an atomising arrangement 242, in various instances an ultrasonic system that is located between the nanoparticles precursor delivery system 248 and the plasma gas source 216.
The ultrasonic system 242 comprises an ultrasonic nozzle 246 adapted for spraying the nanoparticles precursor into a mist and/or an aerosol that will be carried into the plasma gas source 216 and on the yet non-plasma-activated surface of the substrate 212 with carrier gases, such as argon and/or oxygen. The flow of the carrier gas is comprised between 1 and 100 slm, in general of 10 slm and is indicated by the arrows 244.
The ultrasonic system 242 is working thanks to an ultrasonic generator 250, in various instances an ultrasonic generator from Sono-Tek that operates at 120 kHz.
In this specific configuration, metallic nanoparticles are first formed in the gas phase before to cover part of the substrate 212 that is thus coated with a layer of metal oxide derivatives in an identical way that the one describe in the first embodiment of the present invention. With this specific configuration, the device 200 has subsequently two functions: generation of metallic nanoparticles and formation of nanocomposites by subsequent and/or simultaneous deposition of metal oxide derivatives. The arrangement described can be multiplied for the embedment of different nanoparticles.
It is to be noted that the different embodiments of the present invention can be combined with each other.
Atmospheric pressure plasma enhanced chemical vapour deposition of anatase thin film on PMMA optical fibres at low temperature.
Titanium ethoxide (Sigma-Aldrich 80%) was used as titanium precursor. It is viscous and poorly volatile at room temperature and in order to control its flow rate with the feeding system 10, it was diluted in hexane (Sigma-Aldrich, ≥97%) to 0.4 M.
SEM (Secondary Electronic Microscopy) measurements were carried out on optical fibres coated with TiO2.
A shift in the position of the Raman peak at 146 cm−1 toward wave numbers lower than the standard peak position is observed in the Raman spectra of anatase TiO2 grown with O2. The blue shift and/or broadening of the lowest-frequency Eg Raman mode is usually attributed to the phonon confinement and non-stoichiometry effects in the films.
Atmospheric pressure plasma enhanced chemical vapour deposition of boron-doped anatase thin films on silicon wafer substrate at low temperature. Titanium ethoxide (Ti(OC2H5)4, 80%) was diluted in hexane 97%) to 0.4 M. In order to facilitate the injection of the titanium precursor for the thin film deposition, the titanium precursor flow rate was fixed at 10 μL·min−1 and carried toward an ultrasonic nebulizing nozzle operating at 120 kHz (Sono-Tek). The drizzle formed at the outlet of the nozzle is composed by droplets with diameters ranging between 10 μm and 20 μm and which are carried by a mixture of gases, argon/oxygen, with a flow rate of 0.9 and 1 L·min−1 respectively. The boron precursor, i.e. boron isopropoxide (B[(CH3)2CHO]3), 98%) was placed in a separated bubbler, connected to the nebulizing nozzle, joining simultaneously the flow of Ar (carrier gas). The solution was bubbled by using a constant flow of 0.1 L·min−1 of Ar, making the total flow of Ar carrier gas equal to 1 L·min−1 (0.9+0.1 L·min−1). The post-discharge distance from the launching gap was equal to 6 cm after the initiation of the plasma discharge, the deposition was carried out for 10 minutes, keeping constant all the parameters previously described. Films were grown on double side polished silicon wafer substrates (2×2 cm). The silicon substrates were cleaned using absolute ethanol (97%) and dried in air prior to use. The substrate was placed in a quartz tube, along with a metallic holder, to avoid the substrate to move during the deposition.
To evidence the presence of the boron in the films and elucidate its position in the film or within the TiO2 lattice, XPS analyses were performed both on the surface (
To determine the crystalline phase of the TiO2 deposited by AP-PECVD on the silicon substrate, Raman spectroscopy was carried out. Raman spectrum of the B—TiO2 sample (
In addition, SEM analyses of the B—TiO2 sample confirmed the deposition of the film (
Atmospheric pressure plasma enhanced chemical vapour deposition at low temperature of nanocomposite thin films composed of anatase and preformed silver nanoparticles.
A suspension/solution composed of titanium ethoxide (Sigma-Aldrich, ≥80%) and commercial Ag nanoparticles (Ag NPs) were used to deposit Ag—TiO2 nanocomposite films.
120 mg of commercial Ag NPs with a diameter of 6-7 nm (PlasmaChem GmbH) was dispersed in 10 mL of Hexane (Sigma-Aldrich, ≥97%) in an ultrasonic bath during 5 min. Then 500 μL of this Ag NPs suspension was added to 20 mL of a titanium ethoxide solution having a concentration of 0.5 M (the solvent is hexane) and dispersed again during 5 min. Ag NPs-titanium ethoxide suspension solution was used as a titanium precursor for Ag—TiO2 composites coating. The titanium precursor flow rate, controlled by a syringe pump is fixed at 10 μL/min and carried toward an ultrasonic nebulizing nozzle operating at 120 kHz. The mist formed at the outlet of the nozzle is composed by droplets with diameters ranging between 10 and 20 μm. It is introduced with 2 slm argon/oxygen flow (Ar:O2=1:1 slm) in the post-discharge at a distance of 6 cm from the launching gap. The discharge was generated at atmospheric pressure inside the quartz discharge tube with a MW power of 200 W and working Ar gas flow of 10 slm.
UV-Vis spectrophotometry was used to compare the optical property of the deposited Ag—TiO2 composite coating with TiO2 films. As observed from the spectra in
Atmospheric pressure plasma enhanced chemical vapour deposition at low temperature of nanocomposite thin films composed of anatase and in situ synthesized silver nanoparticles.
Anatase TiO2 thin films containing silver nanoparticles containing have been deposited using the set up described in
By coating surfaces with crystalline metal oxide derivative, elaboration of photocatalytic surfaces is possible. Moreover, elaboration of photocatalytic surfaces on heat-sensitive material, such as glass, polymer and/or plastics is also possible. Also, the deposited crystalline thin films can be useful for photocatalytic, photovoltaic or sensing applications.
Atmospheric pressure and low temperature growth of anatase thin films loaded with Au nanoparticles.
Anatase TiO2 thin films containing gold nanoparticles also have been deposited using the set-up described in
The liquid gold precursor (solution of gold trihydrochlorate solubilised in water or ethanol) is injected as a fine mist into the gas stream after the microwave discharge zone via a Sono-Tek ultrasonic nozzle. Feeding rate of the gold precursor is set up to 10 microliters/min using a syringe pump. The power delivered to the Sono-Tek is fixed at P=2 W. The liquid gold precursor, nebulized into micrometer-size fine droplets, is subsequently carried into the microwave post-discharge by mean of a 1 slm flow of Ar carrier gas.
The titanium precursor (TEOT) is injected at a flow rate of 10 μL·min−1 using a syringe pump and atomized thanks to a Sono-Tek ultrasonic nozzle. The titanium precursor droplets are sent to the post discharge zone by means of a carrier gas mixture composed of 1 slm Ar and 1 slm O2. The Sono-Tek power is set at P=4 W. Crystalline TiO2 thin films that entrapped the gold nanoparticles are grown on the substrate.
Such procedure allows the single-step, atmospheric-pressure and low-temperature growth of anatase TiO2 thin films loaded with metallic Au NPs as shown by XRD (X-Ray Diffraction) pattern that exhibits both diffraction peaks of metallic Au and anatase TiO2 (see
XPS measurements confirms that the coatings are only composed of metallic Au and stoichiometric TiO2 (only Ti4+, no Ti3+) (see
A plasmonic effect due to Au NPs is observed with a strong absorption in the range 500-600 nm (
| Number | Date | Country | Kind |
|---|---|---|---|
| 93221 | Sep 2016 | LU | national |
The present invention is the US national stage under 35 U.S.C. § 371 of International Application No. PCT/EP2017/073165, which was filed on Sep. 14, 2017, and which claims the priority of application LU 93221 filed on Sep. 15, 2016, the content of which (text, drawings and claims) are incorporated here by reference in its entirety.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/EP2017/073165 | 9/14/2017 | WO | 00 |
