Keizo et al., "The Roles of Ions and Neutral Active Species in Microwave Plasma Etching", J. Electrochem. Soc.: Solid-State Science and Technology, Jun. 1979, pp. 1024-1028. |
Matsuo et al., "Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma", Japanese Journal of Applied Physics, vol. 22, No. 4, Apr. 1983, pp. L210-L212. |
Burke et al., "Microwave Multipolar Plasma for Etching and Deposition", Solid State Technology, Feb. 1988, pp. 67-71. |
Ono et al., "Reactive Ion Stream Etching Utilizing Electron Cyclotron Resonance Plasma", J. Vac. Sci. Technol. B, vol. 4, No. 3, May/Jun. 1986, pp. 696-700. |
Hale et al., "ibex-9000 ECR" Microscience, advertisement sent Sep. 29, 1987. |
Cooke et al., "Multipolar ECR: Opening a New Range of Low-Damage Etch Processes", Semicon West Proceeding, 1988, pp. 289-296. |
Hirao et al., "Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method", Japanese Journal of Applied Physics, vol. 27, No. 1, Jan. 1988, pp. L21-L23. |
Alcatel, "RCE-160, Low Pressure High Density Plasma Processing with the Microwave DECR Reactor", 7.91.156.DVM-SDG. Printed in France 05/88. TechnicMedia pp.? |
Alcatel, "Alcatel Technology: The Ultimate"7.91.153 DVM-SDG. Printed in France 03/88. TechnicMedia, pp. ? |
Sumitomo Metals, "Bias ECR Plasma CVD", SME-TR-COO3, 1986, 2, pp. 1-13. |
Sumitomo Metals "ECR Plasma Etching" SME-TR-E002, pp. 1-16. |
Advertisement "ECR Plasma CVD System" Nakamura et al., ECR Plasma Deposition Under a Controlled Magnetic Field., Abstract Mp. 303, pp. 439-440. |