Claims
- 1. A dry etching method comprising the steps of:
- disposing in a reaction chamber a semiconductor substrate formed with a film;
- introducing into the reaction chamber a process gas for exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and
- removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
- 2. A dry etching method comprising the steps of:
- disposing in a reaction chamber a semiconductor substrate including a film made of a material comprising silicon;
- introducing into the reaction chamber a process gas comprising ClF.sub.3 gas and a gas which is at least one of a CHF.sub.3 gas, and a CH.sub.2 F.sub.2 gas, said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and
- removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
- 3. A dry etching method comprising the steps of:
- disposing in a reaction chamber a semiconductor substrate including a film made of a material comprising silicon;
- introducing into the reaction chamber a process gas comprising an interhalogen compound gas, a carbon fluoride gas and an inert gas, said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and
- removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
- 4. A dry etching method comprising the steps of:
- disposing in a reaction chamber a semiconductor substrate including a polysilicon film;
- introducing into the reaction chamber a process gas comprising at least a BrCl gas, said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and
- removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
- 5. A dry etching method comprising the steps of:
- disposing in a reaction chamber a semiconductor substrate including a metal film made of a material comprising silicon, and comprising aluminum as its main component;
- introducing into the reaction chamber a process gas comprising BrCl gas, said process gas exerting, in the state of plasma, the effects of etching said film and depositing reaction products on the wall surface of an opening formed by etching, while generating, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in said etching so as to contribute to the suppression of film formation; and
- removing at least a part of said film by turning the process gas into a plasma in the vicinity of the semiconductor substrate in said reaction chamber.
Priority Claims (2)
Number |
Date |
Country |
Kind |
4-161551 |
Jun 1992 |
JPX |
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6-144730 |
Jun 1994 |
JPX |
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Parent Case Info
This is a Divisional of U.S. patent application Ser. No. 08/365,963, filed Dec. 29, 1994, U.S. Pat. No. 5,916,494, which is a continuation-in-part application of U.S. patent application Ser. No. 08/079,529 filed Jun. 22, 1993, now abandoned.
US Referenced Citations (17)
Foreign Referenced Citations (2)
Number |
Date |
Country |
60-165724 |
Aug 1985 |
JPX |
2-151031 |
Jun 1990 |
JPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
365963 |
Dec 1994 |
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
79529 |
Jun 1993 |
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