Claims
- 1. A method of making an electrically programmable memory element, comprising the steps of:providing a contact material; altering the resistivity of a portion of said contact material so that said contact material includes at least a first region having a first resistivity and a second region having a second resistivity greater than said first resistivity; and introducing a memory material in electrical communication with said contact material, said second region being proximate to said memory material, said first region being distant from said memory material.
- 2. The method of claim 1, wherein said altering step increases the resistivity of said portion.
- 3. The method of claim 1, wherein said altering step includes the step of doping said portion.
- 4. The method of claim 1, wherein said altering step includes the step of implanting ions into said portion.
- 5. The method of claim 1, wherein said portion includes at least a part of an edge of said contact.
- 6. The method of claim 1, wherein said second region is adjacent said memory material.
- 7. The method of claim 1, wherein said memory material is programmable to at least a first resistance state and a second resistance state.
- 8. The method of claim 1, wherein said memory material is a phase change material.
- 9. The method of claim 1, wherein said memory material includes a chalogen.
- 10. The method of claim 1, wherein said contact a material is a conductive material.
- 11. The method of claim 1, wherein said second region is said altered portion.
RELATED APPLICATION INFORMATION
This application is a continuation-in-part of U.S. patent application Ser. No. 09/620,318, filed on Jul. 22, 2000, which is a continuation-in-part of U.S. patent application Ser. No. 09/276,273, filed on Mar. 25, 1999, which is a continuation-in-part of U.S. patent application Ser. No. 08/942,000, filed Oct. 1, 1997, now abandoned.
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Continuation in Parts (3)
|
Number |
Date |
Country |
Parent |
09/620318 |
Jul 2000 |
US |
Child |
09/677957 |
|
US |
Parent |
09/276273 |
Mar 1999 |
US |
Child |
09/620318 |
|
US |
Parent |
08/942000 |
Oct 1997 |
US |
Child |
09/276273 |
|
US |