This application claims the benefit of Japanese Patent Application No. 2016-198728 filed on Oct. 7, 2016, the entire disclosures of which are incorporated herein by reference.
The embodiments described herein pertain generally to an electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied onto the processing target substrate and an electrolytic processing method using the electrolytic processing jig.
An electrolytic process (electrolytic processing) is a technique used in various kinds of processings such as a plating processing and an etching processing. For example, the electrolytic processing is performed in a manufacturing process for a semiconductor device.
The aforementioned plating processing is conventionally performed by a plating apparatus described in Patent Document 1, for example. In the plating apparatus, an anode electrode made of, by way of example, platinum in a mesh shape is placed in a plating cup, and a semiconductor wafer is placed to face the anode electrode with a plating target surface thereof facing downwards. Further, a supporting member configured to support the semiconductor wafer constitutes a cathode electrode connected to the semiconductor wafer. By flowing a plating liquid toward the plating target surface of the semiconductor wafer through the anode electrode within the plating cup, the plating processing is performed on the semiconductor wafer.
Further, the plating apparatus disclosed in Patent Document 1 is equipped with an ultrasonic oscillator, and by delivering an ultrasonic wave generated from this ultrasonic oscillator to the plating liquid, the plating liquid is agitated, so that uniformity of the plating processing is improved.
When the plating apparatus described in Patent Document 1 is used, however, since this plating apparatus has the configuration in which the plating liquid is flown, the structure of the apparatus is complicated. Further, since the ultrasonic oscillator for agitating the plating liquid is required to improve the uniformity of the plating processing, a large-scale agitating device is also needed.
In view of the foregoing, exemplary embodiments provide a technique capable of performing an electrolytic processing on a processing target substrate efficiently and appropriately.
In an exemplary embodiment, there is provided an electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate. The electrolytic processing jig includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig.
According to the exemplary embodiment, by applying the voltage between the direct electrode and the processing target substrate after bringing the direct electrode into contact with the processing liquid by moving the electrolytic processing jig and the processing target substrate to be adjacent to each other relatively, the electrolytic processing can be performed on the processing target substrate appropriately. Further, the electrolytic processing jig according to the present exemplary embodiment does not have a conventional configuration in which the processing liquid is flown and does not require a large-scale agitating device for agitating the processing liquid. Therefore, the apparatus configuration can be simplified.
Here, if the front surface of the electrolytic processing jig is flat, air may remain between the electrolytic processing jig and the processing liquid when the direct electrode is brought into contact with the processing liquid, so that a concern that air bubbles may be generated in the processing liquid is raised. If there are the air bubbles, it is difficult to perform the electrolytic processing appropriately.
Further, if the front surface of the electrolytic processing jig is flat, a surface tension of the processing liquid applied to the electrolytic processing jig is increased when separating the electrolytic processing jig from the processing liquid after the electrolytic processing is finished. Further, to reduce the amount of the processing liquid, the electrolytic processing is performed in a state that the distance between the electrolytic processing jig and the processing liquid is minute. In such a case, it is difficult to form, between the electrolytic processing jig and the processing liquid, a gap through which air is introduced. Furthermore, if the distance between the electrolytic processing jig and the processing liquid is minute, the direct electrode may be attached to the processing target substrate due to the influence from the atmosphere. In such a case, a large force is required for the separation, so that it is difficult to carry out the separation easily.
According to the above-mentioned exemplary embodiment, however, since the front surface of the electrolytic processing jig has the irregularity pattern, the air remaining between the electrolytic processing jig and the processing liquid can be removed through the recesses of the irregularity pattern when the direct electrode is brought into contact with the processing liquid. Therefore, the air bubbles in the processing liquid can be suppressed, so that the electrolytic processing can be performed appropriately.
Furthermore, since the air exists in the recesses of the irregularity pattern as stated above, the contact area between the processing liquid and the front surface of the electrolytic processing jig is reduced as much as the processing liquid does not exist in these recesses. Therefore, the surface tension of the processing liquid applied to the electrolytic processing jig can be reduced. Consequently, the force required to separate the electrolytic processing jig from the processing liquid can be reduced, so that the separation can be carried out easily.
In another exemplary embodiment, there is provided an electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate. The electrolytic processing jig includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. A through hole is formed in the electrolytic processing jig to be extended from a front surface of the electrolytic processing jig to a rear surface thereof.
According to the present exemplary embodiment, after the electrolytic processing jig is placed at a preset processing position, the processing liquid is supplied into the gap between the electrolytic processing jig and the processing target substrate via the through hole, and the direct electrode is brought into contact with the processing liquid. At this time, even if the air exists between the electrolytic processing jig and the processing target substrate, this air is pushed out by the processing liquid supplied from the through hole. Therefore, the air bubbles in the processing liquid can be suppressed, so that the electrolytic processing can be appropriately performed. Moreover, when separating the electrolytic processing jig from the processing liquid after the electrolytic processing is ended, the processing liquid is pushed out by supplying a fluid (a gas or a liquid) into the gap between the electrolytic processing jig and the processing target substrate through the through hole. As a result, the surface tension of the processing liquid applied to the electrolytic processing jig can be reduced, so that the force required for the separation can also be reduced. Hence, the separation can be performed easily.
In yet another exemplary embodiment, there is provided an electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate. The electrolytic processing jig includes a base body having a flat plate shape; a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode; and a moving device configured to move one end of the base body and the other end thereof in a vertical direction individually.
According to the present exemplary embodiment, when bringing the direct electrode into contact with the processing liquid, the other end of the base body is moved toward the processing target substrate by the moving device from a state in which the base body is inclined from a horizontal direction by placing the one end of the base body closer to the processing target substrate than the other end of the base body. At this time, even if the air exists between the electrolytic processing jig and the processing target substrate, this air is pushed out from the one end side to the other end side. Therefore, the air bubbles in the processing liquid can be suppressed, so that the electrolytic processing can be appropriately performed. In addition, when separating the electrolytic processing jig from the processing liquid after the electrolytic processing is completed, the other end of the base body is moved away from the processing target substrate by the moving device. At this time, air is introduced into an interface between the other end of the processing liquid and the electrolytic processing jig. Accordingly, the surface tension of the processing liquid applied to the electrolytic processing jig can be reduced. As a result, since the force required for the separation can be reduced, the separation can be performed easily.
In still yet another exemplary embodiment, there is provided an electrolytic processing method of performing an electrolytic processing on a processing target substrate by using an electrolytic processing jig. The electrolytic processing jig comprises a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body. An irregularity pattern is formed on a front surface of the electrolytic processing jig. The electrolytic processing method comprises a first process of bringing the direct electrode into contact with the processing liquid on the processing target substrate by moving the electrolytic processing jig and the processing target substrate to be adjacent to each other relatively; and a second process of performing the electrolytic processing on the processing target substrate by applying a voltage between the direct electrode and the processing target substrate. In the first process and the second process, a gas exists in a recess of the irregularity pattern while the direct electrode is kept in contact with the processing liquid.
In still yet another exemplary embodiment, there is provided an electrolytic processing method of performing an electrolytic processing on a processing target substrate by using an electrolytic processing jig. The electrolytic processing jig comprises a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body. A through hole is formed in the electrolytic processing jig to be extended from a front surface of the electrolytic processing jig to a rear surface thereof. The electrolytic processing method comprises a first process of placing the electrolytic processing jig at a preset processing position by moving the electrolytic processing jig and the processing target substrate to be adjacent to each other relatively; a second process of supplying the processing liquid between the electrolytic processing jig and the processing target substrate through the through hole and bringing the direct electrode into contact with the processing liquid; and a third process of performing the electrolytic processing on the processing target substrate by applying a voltage between the direct electrode and the processing target substrate.
In still yet another exemplary embodiment, there is provided an electrolytic processing method of performing an electrolytic processing on a processing target substrate by using an electrolytic processing jig. The electrolytic processing jig comprises a base body having a flat plate shape; a direct electrode provided on a front surface of the base body; and a moving device configured to move one end of the base body and the other end thereof in a vertical direction individually. The electrolytic processing method comprises a first process of bringing the direct electrode into contact with the processing liquid on the processing target substrate by moving the other end of the base body toward the processing target substrate with the moving device from a state in which the base body is inclined from a horizontal direction by placing the one end of the base body closer to the processing target substrate than the other end of the base body; and a second process of performing the electrolytic processing on the processing target substrate by applying a voltage between the direct electrode and the processing target substrate.
According to the exemplary embodiments as described above, the electrolytic processing can be performed on the processing target substrate efficiently and appropriately.
Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings. However, it should be noted again that the exemplary embodiments are not limiting the present disclosure.
A first exemplary embodiment will be described.
The manufacturing apparatus 1 is equipped with a wafer holding unit 10. The wafer holding unit 10 is a spin chuck configured to hold and rotate the wafer W. The wafer holding unit 10 has a front surface 10a having a diameter larger than that of the wafer W when viewed from the top, and this front surface 10a is provided with, by way of example, a suction hole (not shown) for attracting the wafer W. The wafer W can be attracted to and held on the wafer holding unit 10 by being suctioned from this suction hole.
The wafer holding unit 10 is equipped with a driving device 11 having, for example, a motor. The wafer holding unit 10 can be rotated at a preset speed by the driving device 11. Further, the driving device 11 is equipped with an elevation driving unit (not shown) such as a cylinder, so the wafer holding unit 10 can be moved vertically.
An electrolytic processing jig 20 is provided above the wafer holding unit 10, facing the wafer holding unit 10. The electrolytic processing jig 20 has a base body 21 made of an insulator. The base body 21 is of a flat plate shape and has a front surface 21a having a diameter larger than the diameter of the wafer W when viewed from the top. The base body 21 is equipped with terminals 22, direct electrodes 23 and an indirect electrode 24.
The terminals 22 are protruded from the front surface 21a of the base body 21. As shown in
As illustrated in
When the plating processing is performed, these multiple direct electrodes 23 are brought into contact with a plating liquid on the wafer W, as will be explained later. Further, when viewed from the top, the shape of the direct electrode 23 is not limited to the shown example of the present exemplary embodiment but the direct electrode 23 may be of, by way of non-limiting example, a circular shape or a rectangular shape.
The indirect electrode 24 is provided within the base body 21. That is, the indirect electrode 24 is not exposed to the outside.
The terminals 22, the direct electrodes 23 and the indirect electrode 24 are connected to a DC power supply 30. The terminals 22 are connected to a cathode side of the DC power supply 30. The direct electrodes 23 and the indirection electrode 24 are connected to an anode side of the DC power supply 30.
A moving device 40 configured to move the base body 21 in the vertical direction is provided at a rear surface 21b side of the base body 21. The moving device 40 is equipped with an elevation driving unit (not shown) such as a cylinder. Further, a configuration of the moving device 40 is not particularly limited as long as the base body 21 is movable up and down.
A nozzle 50 for supplying the plating liquid onto the wafer W is provided between the wafer holding unit 10 and the electrolytic processing jig 20. The nozzle 50 is configured to be movable in the horizontal direction and the vertical direction by a moving mechanism 51 to be advanced to and retreated from the wafer holding unit 10. Further, the nozzle 50 communicates with a plating liquid source (not shown) which stores the plating liquid therein, and the plating liquid is supplied from this plating liquid source to the nozzle 50. Further, the plating liquid may be, by way of non-limiting example, a mixed solution of copper sulfate and sulfuric acid, and, in this case, copper ions are included in the plating liquid. Further, in the present exemplary embodiment, though the nozzle 50 is used as a processing liquid supply unit, various other kinds of devices may be used as a mechanism of supplying the plating liquid.
Furthermore, a cup (not shown) configured to receive and collect the liquid dispersed from or falling from the wafer W may be provided around the wafer holding unit 10.
The manufacturing apparatus 1 having the above-described configuration is equipped with a control unit (not shown). The control unit may be, for example, a computer and includes a program storage unit (not shown). The program storage unit stores a program for controlling a processing on the wafer W in the manufacturing apparatus 1. Further, the program may be recorded in a computer-readable recording medium such as a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO) or a memory card, and may be installed from this recording medium to the control unit.
Now, a plating processing in a manufacturing method using the manufacturing apparatus 1 configured as described above will be discussed.
First, as shown in
Afterwards, the electrolytic processing jig 20 is lowered by the moving device 40, as shown in
Here, when bringing the direct electrodes 23 into contact with the plating liquid M by lowering the electrolytic processing jig 20, air may enter a gap between the electrolytic processing jig 20 and the plating liquid M, that is, the front surface 21a of the base body 21 and the plating liquid M, that is, a gap between the surface of the electrolytic processing jig 20 at the wafer W side and the plating liquid M. Even in this case, it is possible to remove the air through the recesses of the irregularity pattern of the electrolytic processing jig 20, that is, through the gaps 25, as shown in
Afterwards, an electric field (electrostatic field) is formed by applying a DC voltage with the indirect electrode 24 as the anode and the wafer W as the cathode. As a result, sulfuric acid ions S as negatively charged particles are gathered at the front surface side of the electrolytic processing jig 20 (on the side of the indirect electrode 24 and the direct electrodes 23), and copper ions C as positively charged particles are moved to the surface side of the wafer W, as depicted in
Here, to avoid the direct electrodes 23 from serving as the cathode, the direct electrodes 23 are set in an electrically floating state without being connected to the ground. In this case, since charge exchange is suppressed in the surfaces of the electrolytic processing jig 20 and the wafer W, the electrically charged particles attracted by the electrostatic field are arranged on the surfaces of the direct electrodes 23. Further, the copper ions C are uniformly arranged on the surface of the wafer W. Further, since the charge exchange of the copper ions C is not performed and electrolysis of water is suppressed on the surface of the wafer W, an electric field can be strengthen when the voltage is applied between the indirect electrode 24 and the wafer W. Further, as the movement of the copper ions C can be accelerated by this high electric field, a plating rate of the plating processing can be improved. Further, by controlling this electric field as required, the copper ions C arranged on the surface of the wafer W is also controlled as required. As stated above, since the generation of the air bubbles on the surfaces of the direct electrodes 23 is suppressed, the copper ions C arranged on the surfaces of the direct electrodes 23 are stabilized.
Then, if a sufficient amount of the copper ions C is moved toward the wafer W side to be accumulated thereon, a voltage is applied with the direct electrodes 23 as the anode and the wafer W as the cathode, so that an electric current is allowed to flow between the direct electrodes 23 and the wafer W. As a result, as depicted in
Since the copper ions C are reduced in the state that they are sufficiently accumulated to be uniformly arranged on the surface of the W, the copper plate 60 can be uniformly precipitated on the surface of the wafer W. As a consequence, density of crystals in the copper plate 60 is increased, so that the copper plate 60 having high quality can be formed. Further, since the reduction is carried out in the state that the copper ions C are uniformly arranged on the surface of the wafer W, the copper plate 60 can be uniformly formed with high quality.
As the supply of the plating liquid M from the nozzle 50, the movement of the copper ions C by the indirect electrode 24 and the reduction of the copper ions C by the direct electrodes 23 and the wafer W as described above are repeated, the copper plate 60 grows to have a preset film thickness.
Thereafter, the electrolytic processing jig 20 is raised by the moving device 40, as shown in
Further, since the irregularity pattern is formed on the entire front surface of the electrolytic processing jig 20, that is, the surface of the electrolytic processing jig 20 at the wafer W side, air is introduced to an interface between an outer peripheral portion of the plating liquid M and the surface of the electrolytic processing jig 20 at the wafer W side. This air contributes to further reducing the surface tension of the plating liquid M applied to the electrolytic processing jig 20. Therefore, a force required to separate the electrolytic processing jig 20 from the plating liquid M can be reduced.
Through the above-described operations, the series of plating processing in the manufacturing apparatus 1 are completed.
According to the exemplary embodiment described above, the plating processing can be appropriately performed on the wafer W in the state that the electrolytic processing jig 20 is placed to face the wafer W and the direct electrodes 23 are in contact with the plating liquid M. Further, since the movement of the copper ions C by the indirect electrode 24 and the reduction of the copper ions C by the direct electrodes 23 and the wafer W are performed individually, the reduction of the copper ions C can be conducted in the state that the copper ions C are sufficiently and uniformly accumulated on the surface of the wafer W. Therefore, the plating processing can be uniformly performed on the surface of the wafer W.
Moreover, according to the present exemplary embodiment, since the surface of the electrolytic processing jig 20 at the wafer W side has the irregularity pattern, the air which enters the gap between the surface of the electrolytic processing jig 20 at the wafer W side and the plating liquid M can be removed through the gaps 25 when the direct electrodes 23 are brought into contact with the plating liquid M by lowering the electrolytic processing jig 20 before the plating processing. Therefore, the generation of the air bubbles in the plating liquid M can be suppressed. Since the adhesion of the air bubbles to the surfaces of the direct electrodes 23 can be suppressed, the stable plating is enabled.
In addition, depending on processing conditions, air bubbles of, for example, a hydrogen gas may be generated during the plating processing. In such a case, these air bubbles generated in the plating processing can be removed through the gaps 25, so that the plating processing can appropriately carried out.
Further, since the surface of the electrolytic processing jig 20 at the wafer W side has the irregularity pattern, the air exists in the gaps 25 when the electrolytic processing jig 20 is raised and separated from the plating liquid M after the plating processing. Therefore, the surface tension of the plating liquid M applied to the electrolytic processing jig 20 can be reduced. Furthermore, since the air is introduced to the interface between the outer peripheral portion of the processing liquid M and the electrolytic processing jig 20, the surface tension of the plating liquid M can be further reduced. Accordingly, the force required to separate the electrolytic processing jig 20 from the plating liquid M can be reduced, so that the separation thereof can be eased.
In the above-described exemplary embodiment, the front surface of the electrolytic processing jig 20 has the irregularity pattern as the direct electrodes 23 serve as the protrusions and the gaps 25 serve as the recesses. However, the irregularity pattern is not limited thereto.
As depicted in
As illustrated in
As depicted in
As depicted in
As illustrated in
In any of
Now, a second exemplary embodiment will be explained.
An electrolytic processing jig 20 is provided with through holes 100 extended from the front surface of the electrolytic processing jig 20 to a rear surface thereof. The through hole 100 is formed through a direct electrode 23 and the base body 21, that is, extended from the front surface of the direct electrode 23 to the rear surface 21b of the base body 21. As depicted in
As depicted in
Further, in the manufacturing apparatus 1 according to the second exemplary embodiment, since the plating liquid M is supplied through the pipeline 101 and the through holes 100 from the plating liquid source 103, the nozzle 50 and the moving mechanism 51 of the first exemplary embodiment can be omitted. Since the other configuration of the manufacturing apparatus 1 of the second exemplary embodiment is the same as the configuration of the manufacturing apparatus 1 of the first exemplary embodiment, redundant description will be omitted.
Now, a plating processing in a manufacturing method using the manufacturing apparatus 1 configured as described above will be discussed.
First, as shown in
Then, the through holes 100 are connected to the plating liquid source 103 by the valve 104, and the plating liquid M is supplied to a gap between the electrolytic processing jig 20 and the wafer W through the through hole 100, as depicted in
Thereafter, by applying the DC voltage with the indirect electrode 24 as the anode and the wafer W as the cathode, the electric field (electrostatic field) is formed. Accordingly, sulfuric acid ions S as negatively charged particles are moved to the front surface side of the electrolytic processing jig 20, and the copper ions C as positively charged particles are moved to the front surface side of the wafer W. Further, since the movement of the copper ions C by the indirect electrode 24 is the same as the process described in the first exemplary embodiment, detailed description thereof will be omitted here.
Afterwards, by applying the voltage while using the direct electrodes 23 as the anode and the wafer W as the cathode, the copper plate 60 is formed on the front surface of the wafer W. This formation of the copper plate 60 (reduction of the copper ions C) is the same as the process described in the first exemplary embodiment, detailed description thereof will be omitted.
Then, when separating the electrolytic processing jig 20 from the plating liquid M, the through holes 100 are connected to the air source 102 by the valve 104, and the air is supplied between the surface of the electrolytic processing jig 20 at the wafer W side and the wafer W through the through holes 100, as depicted in
Through the operations as stated above, the series of plating processing in the manufacturing apparatus 1 are ended.
In the present second exemplary embodiment, the same effects as in the first exemplary embodiment can be achieved. That is, the plating processing can be appropriately performed by suppressing the generation of the air bubbles in the plating liquid M, and, further, the electrolytic processing jig 20 can be easily separated from the plating liquid M.
In the above-described exemplary embodiment, the through holes 100 are connected to the air source 102 and the plating liquid source 103. However, another type of supply source may be provided to supply another type of fluid to the through holes 100.
By way of example, although the air is supplied into the gap between the electrolytic processing jig 20 and the wafer W when separating the electrolytic processing jig 20 from the plating liquid M, it may be possible to supply a liquid, such as, but not limited to, water, instead of the air.
Moreover, in the manufacture of the semiconductor device, various kinds of liquid processings are performed before and after the plating processing. By way of example, when performing a cleaning processing before the plating processing, a cleaning liquid such as DIW or IPA is supplied onto the wafer W. The processing liquid such as this cleaning liquid may be supplied onto the wafer W through the through holes 100.
Further, in the above-described exemplary embodiment, though the through holes 100 serve as supply holes through which the air or the plating liquid M is supplied, a part of the multiple through holes 100 may be used as discharge holes for the air or the plating liquid M. In such a case, when supplying the plating liquid M into the gap between the surface of the electrolytic processing jig 20 at the wafer W side and the wafer W, the air existing between the electrolytic processing jig 20 and the wafer W is also discharged from the through holes 100 serving as the discharge holes. Further, when separating the electrolytic processing jig 20 from the plating liquid M, the plating liquid M existing between the electrolytic processing jig 20 and the wafer W is also discharged through the through holes 100 serving as the discharge holes. Accordingly, the effect of suppressing the generation of the air bubbles in the plating liquid M and the effect of the separation of the electrolytic processing jig 20 from the plating liquid M can be further improved.
In the above-described exemplary embodiment, though the electrolytic processing jig 20 is provided with the through holes 100 formed through the direct electrodes 23 and the base body 21, the electrolytic processing jig 20 may be further provided with through holes 110, as illustrated in
Further, only the through holes 110, instead of the through holes 100, may be formed at the electrolytic processing jig 20. Further, a part of the multiple through holes 110 may be used as discharge holes for the air or the plating liquid M. Furthermore, the through holes 110 may be configured to be opened or closed.
Now, a third exemplary embodiment will be explained.
In the manufacturing apparatus 1, multiple moving devices 200 are provided instead of the moving device 40 of the first exemplary embodiment. The moving device 200 is configured to move one end 21c and the other end 21d of a periphery of the base body 21 in the vertical direction individually. The moving device 200 is equipped with an elevation driving unit (not shown) such as a cylinder. Further, a configuration of the moving device 200 is not particularly limited as long as it is capable of moving the base body 21 up and down.
Further, since the other configuration of the manufacturing apparatus 1 of the third exemplary embodiment is the same as the configuration of the manufacturing apparatus 1 of the first exemplary embodiment, redundant description will be omitted.
Now, a plating processing in a manufacturing method using the manufacturing apparatus 1 configured as described above will be discussed.
First, the liquid puddle of the plating liquid M is formed on the wafer W by using the nozzle 50. Since this formation of the liquid puddle is the same as the process described in the first exemplary embodiment, detailed description thereof will be omitted.
Then, as depicted in
Subsequently, the other end 21d of the base body 21 is lowered by the moving device 200, as shown in
Here, the air existing in the gap between the electrolytic processing jig 20 and the wafer W is pushed out from the one end 21c to the other end 21d. Therefore, the generation of the air bubbles in the plating liquid M can be suppressed.
Thereafter, by applying the DC voltage while using an indirect electrode 24 as the anode and the wafer W as the cathode, the electric field (electrostatic field) is formed. Accordingly, the sulfuric acid ions S as negatively charged particles are moved to a front surface side of the electrolytic processing jig 20, and the copper ions C as positively charged particles are moved to the front surface side of the wafer W. Further, since the movement of the copper ions C is the same as the process described in the first exemplary embodiment, detailed description thereof will be omitted here.
Afterwards, by applying the voltage while using the direct electrodes 23 as the anode and the wafer W as the cathode, the copper plate 60 is formed on the front surface of the wafer W. This formation of the copper plate 60 (reduction of the copper ions C) is the same as the process described in the first exemplary embodiment, detailed description thereof will be omitted.
Then, when separating the electrolytic processing jig 20 from the plating liquid M, the other end 21d of the base body 21 is raised by the moving device 200, as shown in
At this time, air is introduced from the interface between the electrolytic processing jig 20 and the plating liquid M at the side of the other end 21d, that is, an opening between the electrolytic processing jig 20 and the plating liquid M formed at the side of the other end 21d. Accordingly, a contact area between the plating liquid M and the front surface of the electrolytic processing jig 20 is reduced, and a surface tension of the plating liquid M applied to the electrolytic processing jig 20 can be reduced. Then, in this state, the electrolytic processing jig 20 is separated from the plating liquid M, as illustrated in
Through the operations as stated above, the series of plating processing in the manufacturing apparatus 1 are ended.
In this third exemplary embodiment, the same effects as in the first exemplary embodiment can be achieved. That is, the plating processing can be appropriately performed by suppressing the generation of the air bubbles in the plating liquid M, and, further, the electrolytic processing jig 20 can be easily separated from the plating liquid M.
In the above-described exemplary embodiments, the terminals 22 are brought into contact with the wafer W by lowering the electrolytic processing jig 20 through the moving device 40. In the manufacturing apparatus 1, however, the wafer holding unit 10 may be raised by the driving device 11. Alternatively, both the electrolytic processing jig 20 and the wafer holding unit 10 may be moved. Still more, the placement of the electrolytic processing jig 20 and the wafer holding unit 10 may be reversed, and the electrolytic processing jig 20 may be placed under the wafer holding unit 10.
In the above-described exemplary embodiments, the wafer holding unit 10 is configured as the spin chuck. Instead, a cup having an open top and storing therein the plating liquid M may be used.
The above exemplary embodiments have been described for an example where the plating processing is performed as the electrolytic processing. However, the present disclosure may be applicable to various kinds of electrolytic processing such as etching processing.
Further, the exemplary embodiments have been described for the example where the copper ions C are reduced on the front surface side of the wafer W. However, the present disclosure is also applicable to a case where processing target ions are oxidized at the front surface side of the wafer W. In such a case, the processing target ions are negative ions, and the same electrolytic processing may be performed while setting the anode and the cathode in the reverse way. In this exemplary embodiment, though there is a difference between the oxidation and the reduction of the processing target ions, the same effects as those of the above-described exemplary embodiments can be achieved.
From the foregoing, it will be appreciated that the exemplary embodiment of the present disclosure has been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the embodiment disclosed herein is not intended to be limiting. The scope of the inventive concept is defined by the following claims and their equivalents rather than by the detailed description of the exemplary embodiment. It shall be understood that all modifications and embodiments conceived from the meaning and scope of the claims and their equivalents are included in the scope of the inventive concept.
Number | Date | Country | Kind |
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JP2016-198728 | Oct 2016 | JP | national |
Filing Document | Filing Date | Country | Kind |
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PCT/JP2017/032321 | 9/7/2017 | WO |
Publishing Document | Publishing Date | Country | Kind |
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WO2018/066297 | 4/12/2018 | WO | A |
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