Electronic component fabrication method

Abstract

A method for fabricating an electronic component, includes forming a seed film above a base body, cooling said seed film, and putting the cooled seed film into a plating solution to perform electro-plating with said seed film being as a cathode.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow chart showing main steps of a fabrication method of a semiconductor device in accordance with an embodiment of this invention.

FIGS. 2A-2C and 3A-3C illustrate, in cross section, some major steps in the manufacture of the semiconductor device in a way corresponding to the flowchart of FIG. 1.

FIG. 4 is a diagram showing one example of a plating apparatus for use with the embodiment method shown in FIG. 1, in the state that a substrate is situated at a waiting position.

FIG. 5 is a diagram showing another example of the plating apparatus with the substrate being held at a plating position in the embodiment.

FIG. 6 depicts in cross-section a device structure as formed at a process step of the embodiment method of FIG. 1.

FIG. 7 shows a cross-sectional device structure with a seed film formed on its top surface in the embodiment.

FIGS. 8A and 8B are diagrams each showing a cross-section of the substrate for explanation of a substrate-cooling effect of the embodiment.

FIGS. 9A and 9B are diagrams showing one example of a substrate-entry scheme in another embodiment of the invention.

FIG. 10 is a graph showing a plot of current density versus varying voltage in steps during plating with multiple current density values.

Claims

1. A method for fabricating an electronic component, comprising: forming a seed film above a base body;cooling said seed film; andputting the cooled seed film into a plating solution to perform electro-plating with said seed film being as a cathode.

2. The method according to claim 1, wherein a gas is used to cool a back surface of said base body to thereby cool said seed film.

3. The method according to claim 2, wherein said gas is any one of a nitrogen gas and an air.

4. The method according to claim 1, wherein when performing said electro-plating, said seed film is dipped into the plating solution while simultaneously applying a voltage to said seed film.

5. The method according to claim 4, wherein during dipping said seed film into said plating solution, said seed film is applied a lower voltage than a start-up voltage for starting electro-plating after the dipping into said plating solution.

6. The method according to claim 5, wherein the voltage as applied when dipping into said plating solution has its current density less than or equal to one-half of a current density of a current to be flown upon start-up of said electro-plating.

7. The method according to claim 5, wherein when performing said electro-plating, a plurality of steps different in current density from each other are performed.

8. The method according to claim 1, wherein said base body has an opening formed therein, and wherein said electro-plating is used to perform filling of a copper-containing film in the opening and additional deposition of said copper-containing film above said base body.

9. The method according to claim 8, wherein the additional deposition is performed while letting said base body be cooled.

10. The method according to claim 9, wherein during the additional deposition of said copper-containing film, electro-plating is performed at a current density of 80 milliamperes per square centimeter (mA/cm2) or greater.

11. The method according to claim 9, wherein said base body is cooled by cooling a back surface of said base body using a gas.

12. The method according to claim 11, wherein said gas is any one of a nitrogen gas and an air.

13. A method for fabricating an electronic component, comprising: forming an opening in a base body;burying a copper-containing film in the opening; andpermitting additional deposition of said copper-containing film above said base body with the opening filled with said copper-containing film while cooling said base body.

14. The method according to claim 13, wherein the burying and the additional deposition are performed by an electro-plating technique.

15. The method according to claim 14, wherein during the additional deposition of said copper-containing film, electro-plating is performed with a current density higher than that during burying said copper-containing film.

16. The method according to claim 14, wherein during the additional deposition of said copper-containing film, electro-plating is performed at a current density of 80 mA/cm2 or greater.

17. The method according to claim 14, wherein said base body is dipped in a plating solution while letting said base body be cooled.

18. The method according to claim 13, wherein a back surface of said base body is cooled by use of a gas.

19. The method according to claim 18, wherein said gas is any one of a nitrogen gas and an air.

20. The method according to claim 13, wherein the burying results in formation of a copper interconnect wire of a semiconductor device.