1. Field of the Invention
The present invention relates to a structure of an engine start control apparatus.
2. Description of the Related Art
Large currents flow through some semiconducting devices. In such a semiconducting device, conventionally, the temperature applied on an electronic component may exceed an upper temperature limit since heat is generated in a power semiconductor element or a conductive wiring by the flow of the large current. If the power semiconductor element fails to operate due to the temperature, a voltage surge or another factor, a short current flows in the power semiconductor element and thus the temperature of the semiconductor element will further increase.
Therefore, the conventional semiconducting device has been designed for safety by adopting some procedures such as monitoring the temperature of the semiconductor element and accordingly, the current flow is adjusted or stopped.
Since a chip part of the power semiconductor element is dominant as a heat generating source in the semiconducting device, an increase in the temperature of the chip part is largest; nonetheless, it is difficult to directly measure the temperature of the chip part of the power semiconductor element. When the temperature of a substrate part other than the chip part of the semiconductor element is to be measured, the accuracy of measuring the temperature is significantly reduced if a thermal resistance between the chip part and a position at which the temperature of the substrate part is measured is large.
Accordingly, it is requested to reduce the thermal resistance between the chip part and the position at which the temperature is measured and to improve the accuracy of measuring the temperature. The following has been proposed as a method that solved those problems.
JP-2007-049810-A discloses that the temperature of a thermal diffusion conductor is measured, the thermal diffusion conductor is bonded using brazing filler metal and disposed on the side of an upper surface of a bare-chip of the power semiconductor element, thereby improving the accuracy of measuring the temperature.
For example, a semiconducting device in which a large current flows and thus it is necessary to be protected from an increase in a temperature is a power switch module for an idling stop starter. When the starter starts an engine, a large current of several hundred amperes flows in the starter. A MOSFET that is mounted in the power switch module controls switching of a current to be supplied to a starter motor. In this case, the chip of the MOSFET is a heat generating source. The chip junction temperature, therefore, may exceed a guaranteed temperature ranging from 150° C. to 175° C., and it is feared that a malfunction may be incurred.
Moreover, with the idling stop starter, the time it takes to start the engine is a period of time as short as approximately 0.2 to 1 second. This makes the time for a current to start to flow in the power switch module be short as well. Therefore, responsively measuring an increase in temperature of the MOSFET chip caused by the flow of the current is required so as to adjust or block the current at an appropriate time.
Although the accuracy of measuring the temperature can be enhanced by the technique described in JP-2007-049810-A and the like, the structure described in the document, however, is very expensive and can be applied to only a structure in which the bare-chip is mounted. In structure, a chip thermistor and chip diode for general-purposes, which are mounted on a normal substrate and used as a thermometer, cannot conduct temperature measurement.
A thermocouple, representing a general thermometer, is necessary to be attached to a measuring unit and to arrange the wiring therefor, after parts are mounted on a substrate. Thus, there are disadvantages that the usability is deteriorated and the number of assembling processes is increased. The chip thermistor, the chip diode and the like, on the other hand, can be simultaneously mounted as another electronic part is mounted on the surface of the substrate, and this can reduce the number of assembling processes. Accordingly, it is possible to inexpensively assemble the parts and conduct product assembly suitable for mass-production.
It is preferable to use a general-purpose chip thermometer, a general-purpose electronic part and a substrate in order to form an inexpensive structure and measure a temperature as a method for measuring the temperature.
An object of the present invention is to improve the accuracy of measuring the temperature of a power semiconductor using a general-purpose chip thermometer or the like.
The aforementioned object is accomplished by an engine start control apparatus in which a temperature detecting element has at least two connection parts that are electrically connected to conductive wirings, respectively, and a part of a conductive pattern that is connected to a power semiconductor element extends between the connecting parts.
According to the present invention, since a conductor on which the power semiconductor element is mounted is directly connected to a chip thermometer through a high thermal conductive member, a thermal resistance between a chip of the power semiconductor element and the temperature detecting element can be made low. It is, therefore, possible to measure an increase in the temperature of the chip with high accuracy.
The embodiments describe the case in which a general-purpose inexpensive packaged MOSFET is used. A semiconducting device that has a bare-chip mounted therein can be applied to the present invention.
In
Of the conductive wirings, a heat spreader 13 that is a drain terminal of the MOSFET 3 is electrically connected to a first conductor 231, a source terminal 14 of the MOSFET 3 is electrically connected to a fifth conductor 235, a gate terminal 15 controls a conduction of the MOSFET 3 is electrically connected to a sixth conductor 236. The electrode pads 8 are mounted on the first and fifth conductors 231 and 235 through the solder 6. A plurality of wires 9 that are made of aluminum, copper or the like are bonded to the electrode pads 8. The wires 9 are connected to current-voltage input/output terminals of an external device.
Temperature signal terminals 41 and 42 of the thermometer 4 are electrically connected to second and third conductors 232 and 233, respectively. The electrode pads 8 are mounted on the second and third conductors 232 and 233 by soldering. Wires 9 that are made of aluminum, copper or the like are bonded to the electrode pads 8. A signal of a temperature sensed by the thermometer 4 is output to an external engine control unit (ECU).
A fourth conductor 234 that is a part of the first conductor 231 and is a thin line protrudes from the first conductor 231 and extends between the second conductor 232 and the third conductor 233 under the thermometer 4. The fourth conductor 234 and the thermometer 4 are bonded to each other through high thermal conductive resin 7 such as an Ag paste.
When a high thermal conductive resin that has an insulation property is used for the high thermal conductive resin 7, the high thermal conductive resin 7 may be subjected to potting so that the high thermal conductive resin 7 covers an entire electrode part of the thermometer 4. The potted high thermal conductive resin 7 may be filled between the thermometer 4 and the fourth conductor 234, and is connected to the thermometer 4 and the fourth conductor 234, as shown in
Next, the configuration of the MOSFET 3 is described.
The MOSFET 3 is connected to the copper-made first conductor 231 and bonded to the thermometer 4 with the high thermal conductive resin 7 through the fourth conductor 234 that is the part of the first conductor 231. Since a part that extends between the chip 12 and the thermometer 4 can be made of a high thermal conductive member with a thermal conductivity of approximately 3 to 400 W/mK, a thermal resistance between the chip 12 and the thermometer 4 can be small.
If a thermometer is mounted on a conductor that is included in a circuit different from a conductor on which a power semiconductor element (IGBT) is mounted like a conventional inverter or the like, a space located between the conductors is filled with a resist (epoxy) that has a thermal conductivity of approximately 0.2 W/mK. Thus, a thermal resistance on a heat transfer path is large and the accuracy of measuring a temperature is significantly reduced. Therefore, the accuracy of measuring the temperature can be improved by applying the present invention.
The mold case 10 is fixed to the substrate 2 using a silicon adhesive (not illustrated). The input-side busbar 101, the output-side busbar 102 and a connector terminal 111 are bonded to the electrode pads 8 of the substrate 2 through the wires 9 made of aluminum, copper or the like and electrically connected to the external starter so that a current flowing on the substrate 2 and a voltage signal are transferred between the substrate 2 and the starter. A voltage signal of a temperature that is measured by the thermometer 4 is transmitted to the external ECU through a connector 11 and the connector terminal 111 that is formed with the mold case 10 by integral molding.
It is known that aluminum wires are used as the wires used for bonding from a viewpoint of the cost, handling and reliability. The electrode pads 8 are pads that are provided for the bonding and necessary for aluminum wire bonding on the side of the substrate 2. The connections of the busbars to the electrode pads 8 may be achieved by aluminum ribbon bonding.
In this case, when thermometers 4 are arranged for the MOSFETs, respectively, the temperatures of the MOSFETs can be accurately detected. When a space in which the parts are mounted and a reduction in the number of the parts are considered, it is preferable that the single thermometer detect the temperatures of the plurality of MOSFETs with the same accuracy.
In
A seventh conductor 237 and an eighth conductor 238 are arranged by the first conductor 231 and serve as wirings for outputting a temperature signal detected by the thermometer 4 to the outside. Since the second and third conductors 232 and 233 located in the conductor opening 18, and the seventh and eighth conductors 237 and 238 are connected to each other by aluminum wires, the detected temperature signal can be output to the outside.
The single thermometer 4 is arranged so that a thermal resistance between a chip of one of the two MOSFETs 3 arranged in parallel and the thermometer 4 and a thermal resistance between a chip of the other MOSFET 3 and the thermometer 4 are equal to each other. Thus, the single thermometer 4 can detect the temperatures of the two MOSFETs 3 with the same accuracy. The present embodiment describes that the two MOSFETs are used. However, when three or more MOSFETs 3 are used, and the single thermometer 4 is arranged so that thermal resistances between the thermometer 4 and chips of the MOSFETs 3 are equal to each other, the thermometer 4 can detect the temperatures of the MOSFETs 3 with the same accuracy.
The thermal resistances between the thermometer 4 and the chips of the MOSFETs 3 are determined on the basis of a conductivity, a mounting area, a thickness and a distance, which are associated with the chip and the thermometer 4, the constituents including chip 12, the solder 17 (for mounting the chip 12), the heat spreader 13, the solder 6 (on which the heat spreader 13 is mounted), the first conductor 231, the fourth conductor 234, the thermal conductivity of the high thermal conductive resin 7.
In the structure illustrated in
In the embodiment illustrated in
Next, an attachment structure that is used when the semiconducting device according to the present invention is used for an idling stop starter for a vehicle will be described.
Number | Date | Country | Kind |
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2011-095639 | Apr 2011 | JP | national |