EXPOSURE APPARATUS, CONTROL METHOD FOR THE SAME, AND DEVICE MANUFACTURING METHOD

Abstract
An exposure apparatus includes a chamber where an optical element having a capping layer is arranged, and exposes a substrate by using the optical element. The exposure apparatus includes a supply unit which supplies a material to repair the capping layer into the chamber, and a providing unit which provides electromagnetic waves to the optical element. The electromagnetic waves cause a photochemical reaction of the material to grow a layer on the capping layer so as to repair the capping layer.
Description

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.



FIG. 1 is a view schematically showing an example of the overall arrangement of an EUV exposure apparatus according to a preferred embodiment of the present invention;



FIG. 2 is a flowchart showing the control sequence of the exposure apparatus which concerns repair of a capping layer;



FIG. 3 is a view schematically showing an example of the arrangement of a measurement system which measures the capping layer of an optical element that constitutes a projection optical system;



FIG. 4 is a view for explaining repair of the capping layer;



FIG. 5 is a flowchart to explain device manufacture; and



FIG. 6 is a detailed flowchart of the wafer process of step 4 shown in FIG. 5.


Claims
  • 1. An exposure apparatus which comprises a chamber where an optical element including a capping layer is arranged and which exposes a substrate by using said optical element, the exposure apparatus comprising: a supply unit which supplies a material into said chamber to repair the capping layer; anda providing unit which provides electromagnetic waves to said optical element,wherein the electromagnetic waves cause a photochemical reaction of the material to grow a layer on said capping layer so as to repair said capping layer.
  • 2. The apparatus according to claim 1, including an exposure mode to expose the substrate and a repair mode to repair said capping layer, wherein in the repair mode, said supply unit supplies the material into said chamber and said providing unit provides the electromagnetic waves to said optical element.
  • 3. The apparatus according to claim 1, wherein said providing unit includes an irradiation condition adjusting unit which adjusts an irradiation condition under which said optical element is irradiated with the electromagnetic waves.
  • 4. The apparatus according to claim 3, wherein the irradiation condition relates to at least one of a wavelength, an irradiation intensity, and an irradiation region of the electromagnetic waves.
  • 5. The apparatus according to claim 1, wherein said supply unit includes a supply condition adjusting unit which adjusts a supply condition under which the material is supplied to said optical element.
  • 6. The apparatus according to claim 5, wherein the supply condition relates to at least one of a position and a region of said optical element to which the material is supplied from said supply unit into said chamber, and a type and an amount of the material.
  • 7. The apparatus according to claim 1, further comprising: a measurement unit which measures a state of said capping layer; anda control unit which controls operation to repair said capping layer on the basis of a measurement result of said measurement unit.
  • 8. The apparatus according to claim 7, wherein said control unit determines a repair condition for said capping layer on the basis of the measurement result of said measurement unit.
  • 9. The apparatus according to claim 7, wherein said control unit checks determines completion of the repair of said capping layer on the basis of the measurement result of said measurement unit.
  • 10. The apparatus according to claim 1, wherein the electromagnetic waves comprise light generated by a light source that generates exposure light to expose the substrate.
  • 11. The apparatus according to claim 8, wherein said measurement unit is configured to measure a state of said capping layer by using measurement light, andthe electromagnetic waves and the measurement light comprise light generated by a light source that generates exposure light to expose the substrate.
  • 12. The apparatus according to claim 10, wherein said light source comprises an EUV light source.
  • 13. The apparatus according to claim 12, wherein said EUV light source generates light having a wavelength falling within a range not smaller than 11 nm and not greater than 15 nm.
  • 14. The apparatus according to claim 1, wherein said capping layer is made of carbon.
  • 15. The apparatus according to claim 14, wherein the material comprises a carbon containing substance.
  • 16. The apparatus according to claim 15, wherein a gas partial pressure of the carbon containing substance in said chamber is controlled to fall within a range not smaller than 1.5×10−3 Pa and not greater than 1.0×10−2 Pa.
  • 17. A control method for an exposure apparatus comprising a chamber where an optical element including a capping layer is arranged, the control method comprising following steps of: supplying a material to repair the capping layer into the chamber; andproviding electromagnetic waves to the optical element that cause a photochemical reaction of the material so as to grow a layer on the capping layer, thereby repairing the capping layer.
  • 18. A device manufacturing method comprising following steps of: exposing a substrate by using an exposure apparatus according to claim 1; anddeveloping the substrate.
  • 19. A device manufacturing method comprising following steps of: exposing a substrate by an exposure apparatus which comprises a chamber where an optical element including a capping layer is arranged and which exposes the substrate by using the optical element;supplying a material into the chamber to repair the capping layer; andproviding electromagnetic waves to the optical element that cause a photochemical reaction of the material so as to grow a layer on the capping layer, thereby repairing the capping layer.
Priority Claims (1)
Number Date Country Kind
2006-053804 Feb 2006 JP national