Patent Application
20090297706
This invention relates to a film forming system and a method for forming a film, more specifically to a film forming system and a method for forming a film to form a metal oxide film or a metal nitride film.
Generally, in case of vaporizing a liquid precursor in a process of a chemical vapor deposition method (CVD method), mainly a heated liquid precursor is vaporized and supplied under a reduced pressure so that a thin film is formed on a substrate as being an object to be processed.
Conventionally, in case of forming a tantalum pentoxide (Ta2O5) film by the use of a metal compound that is liquid at room temperature and whose vapor pressure is smaller than or equal to 1 Torr at 100 centigrade degree, for example, pentaethoxytantalum (Ta(OC2H5)5), a film is formed by heating pentaethoxytantalum (Ta(OC2H5)5) at about 110 centigrade degree and by heating a substrate at about 400 centigrade degree. In this case, the liquid precursor is required to be heated to be gasified and a precursor supplying pipe for supplying the gasified liquid precursor to a chamber also is required to be heated at a high temperature. If there is a part of the precursor supplying pipe whose temperature is lower than that of the heated liquid precursor, the gasified liquid precursor coagulates again and an amount of the liquid precursor to be supplied to the chamber changes. As a result, there is a problem that repeatability of film forming is aggravated.
In addition, since a container of the liquid precursor and the precursor supplying pipe from the container to the chamber have to be kept at a high temperature, whole of the system becomes large-scaled, thereby increasing a device cost and an energy cost.
Recently in order to solve these problems there is a method as shown in the patent document 1 wherein a raw material of pentaethoxytantalum (Ta(OC2H5)5) is sent to an evaporator in a state of liquid, vaporized by the evaporator and then sent to a chamber.
With this method, however, the above-mentioned problem is not still solved completely because the precursor supplying pipe from the evaporator to the chamber has to be kept at a high temperature.
Then a method has been taken wherein an injection valve (injector) is arranged in an upper part of a chamber and the liquid precursor is directly supplied into the chamber, as shown in the patent document 2.
However, in case of supplying the liquid precursor into the chamber with this method, the liquid precursor has to be vaporized completely and the film has to be formed under a condition wherein a degree of vacuum is high, namely, smaller than or equal to about 0.02 Torr, resulting in oxygen deficit in the tantalum pentoxide (Ta2O5) film. This invites a problem that it is difficult to obtain a tantalum pentoxide (Ta2O5) film of high grade.
Patent document 1 Japan patent laid-open number 2004-197134
Patent document 2 Japan patent laid-open number 2004-197135
The present claimed invention intends to solve all of the problems and a main object of this invention is to make it possible to form a metal oxide film or a metal nitride film having less oxygen deficit at a high deposition rate with improved repeatability and to downsize a film forming system as well.
More specifically, a film forming system in accordance with this invention is a film forming system that forms a film by vaporizing a liquid precursor and then depositing the vaporized liquid precursor on a substrate, and comprises a chamber inside of which the substrate is held and an injection valve that directly injects the liquid precursor into the chamber, wherein the liquid precursor is a mixed solution composed of a metallic compound and a low boiling point organic compound, and a pressure in the chamber is made to be larger than a vapor pressure of the metallic compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution.
In accordance with this arrangement, since the vapor pressure of the liquid precursor containing a metal compound (metal source) devoted to film forming can be raised without raising a temperature by mixing the low boiling point organic compound into the metal compound, and the film can be formed in a state that the pressure in the chamber is kept in a lower degree of vacuum than a pressure of a conventional method, it is possible to restrain generation of oxygen vacancies in a metal oxide film or nitrogen vacancies in a metal nitride film, thereby to obtain the metal oxide film or the metal nitride film of high quality. Furthermore, since the liquid precursor is directly injected into the chamber, a film can be formed at a high deposition rate with good repeatability and the film forming system can be downsized with no heater required for heating the precursor supplying pipe.
As a concrete embodiment, it is preferable that the metallic compound (precursor) is an organic tantalum compound (precursor) or an organic niobium compound.
Furthermore, it is preferable that a vapor pressure of the organic tantalum compound or the organic niobium compound is smaller than or equal to 1 Torr at a temperature more than or equal to 100 degrees centigrade in an atmospheric pressure. In addition, it is preferable that the organic tantalum compound or the organic niobium compound is liquid even though a temperature is lower than or equal to 40 degrees centigrade in an atmospheric pressure.
In addition to the above, it is conceived that the organic tantalum compound or the organic niobium compound is an alcoxide compound, an amine compound, a β diketone complex, a phenyl compound or a 5 member ring compound.
Concretely, the organic tantalum compound can be represented by the organic tantalum compound shown in
As the low boiling point organic compound, it is preferable that its vapor pressure in an atmospheric pressure is larger than or equal to 1 Torr even though a temperature is lower than or equal to 20 degrees centigrade.
Furthermore, it is preferable that the low boiling point organic compound is a compound that can be shown by CXH2X+2 (5≦X≦7).
A method for forming a film in accordance with this invention is a method for forming a film by vaporizing a liquid precursor and then depositing the vaporized liquid precursor on a substrate, and is characterized by that a mixed solution as the liquid precursor composed of a metallic compound and a low boiling point organic compound is directly injected into a chamber inside of which the substrate is held, and a pressure in the chamber is made to be both larger than a vapor pressure of the metallic compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution.
In accordance with this invention, since the vapor pressure of the liquid precursor containing a metal compound devoted to film forming can be raised without raising a temperature by mixing the low boiling point organic compound into the metal compound, and the film can be formed in a state the pressure in the chamber is kept in a lower degree of vacuum than a pressure of a conventional method, it is possible to restrain generation of oxygen vacancies in a metal oxide film or nitrogen vacancies in a metal nitride film, thereby to obtain the metal oxide film or the metal nitride film of high quality. Furthermore, since the liquid precursor is directly injected into the chamber, a film can be formed at a high deposition rate with good repeatability and the film forming system can be downsized with no heater required for heating the precursor supplying pipe.
Next, an embodiment of this invention will be explained with reference to the accompanying drawings.
The film forming system 1 in accordance with this embodiment is, as shown in
In this embodiment, a mixed solution of pentaethoxytantalum (Ta(OC2H5)5) as being an organic compound and n-pentane (n-C5H12) as being low boiling point organic compound (solvent) is used as the liquid precursor. The mixed solution composed of pentaethoxytantalum (Ta(OC2H5)5) and n-pentane (n-C5H12) is stored in a container 6 made of, for example, stainless-steel. And the mixed solution passes through a precursor supplying pipe 5 due to pressurized N2 gas (Ar gas) pressed into the container 6 and then is supplied to the inside of the chamber 3 through an injection valve 4, to be described later. Furthermore, the liquid precursor is vaporized and filled in the chamber 3 at the same time when the liquid precursor is injected from the injection valve 4 into the inside of the chamber 3.
The chamber 3 internally holds the substrate 2 as being the object to be processed by means of a holding mechanism and further has a substrate heater 7 to heat the substrate 2. The chamber 3 is depressurized by a vacuum pump 8. In addition, an oxygen supplying pipe 9 to supply oxygen gas (O2) for fully oxidizing a film of tantalum pentoxide (Ta2O5) is also arranged. A supplying flow amount of the oxygen (O2) gas in the oxygen supplying pipe 9 is controlled by a mass flow controller (MFC) 10. Since the holding mechanism is a commonly used mechanism, a detailed explanation and a drawing will be omitted.
Furthermore, the pressure in the chamber 3 is adjusted so that pentaethoxytantalum (Ta(OC2H5)5) in the mixed solution injected into the chamber 3 vaporizes. More specifically, the pressure in the chamber 3 is made to be both larger than a vapor pressure of pentaethoxytantalum (Ta(OC2H5)5) prior to being mixed with n-pentane (n-C5H12) and smaller than a vapor pressure of the mixed solution composed of n-pentane (n-C5H12) and pentaethoxytantalum (Ta(OC2H5)5).
The injection valve 4 directly injects the liquid precursor into the chamber 3 and is arranged in an upper part of the chamber 3 to face a surface of the substrate 2. The injection valve 4 is controlled to open or close by an injection valve controller 11 for controlling the injection valve 4 to open or close.
Next, an embodiment of thus arranged film forming system 1 is shown as follows.
First, comparison results between the vapor pressure of the mixed solution composed of pentaethoxytantalum (Ta(OC2H5)5) and acetone, methanol, ethanol, propane, butane, pentane and hexane as being the low boiling point organic compound and the vapor pressure of a pentaethoxytantalum (Ta(OC2H5)5) solution without being mixed with the low boiling point organic compound is shown in
The mixing ratio of the liquid precursor in this embodiment is {(Ta(OC2H5)5)/(Ta(OC2H5)5)+n-C5H12}=0.2 (mol ratio). In addition, the pressure of the pressurized N2 gas is made about 0.15˜0.50 MPa. The substrate heater 7 is set to make a temperature of the substrate 2 at 400 degrees centigrade ˜500 degrees centigrade, a flow rate of the oxygen gas is kept 500 ml/min and the pressure in the chamber 3 is set about 0.1 Torr. With this state kept, the injection valve 4 is open and closed so as to form a film for 1000 sec.
As a result of this, a thickness of a tantalum pentoxide (Ta2O5) film is about 150 nm. A film deposition rate is about 9 nm/min.
Next, electric characteristics of the formed tantalum pentoxide (Ta2O5) film is measured.
The silicon (Si) substrate is thermally oxidized so that a platinum (Pt) film of about 100 nm in thickness is formed on a silicon dioxide (SiO2) film of about 200 nm in thickness, and then a tantalum pentoxide (Ta2O5) film is formed on the platinum (Pt) film.
Later, a gold (Au) film of 0.5 m in thickness is formed by means of vacuum deposition and a dielectric breakdown electric field of tantalum pentoxide (Ta2O5) is obtained with the electrodes of platinum (Pt) and gold (Au). The results are shown in a table of
With the result shown in
Overall the dielectric breakdown withstand pressure of the tantalum pentoxide (Ta2O5) film formed with the conventional film forming method is small. This shows that a lot of defects exist in the tantalum pentoxide (Ta2O5) film, and the defects can be thought of as oxygen. In this case, it is necessary to decrease the oxygen defects by the use of an annealing treatment in the presence of oxygen after a conventional film forming.
In this embodiment, the partial pressure of oxygen can be increased ten times.
In accordance with thus arranged film forming system 1 of this embodiment, since the vapor pressure of the liquid precursor containing a metal compound devoted to film forming can be raised without raising a temperature by mixing the low boiling point organic compound into the metal compound, and the film can be formed in a state the pressure in the chamber 3 is kept in a lower degree of vacuum than that of a conventional method, it is possible to restrain generation of oxygen vacancies in a metal oxide film or nitrogen vacancies in a metal nitride film, thereby to obtain the metal oxide film or the metal nitride film of high quality. Furthermore, since the liquid precursor is directly injected into the chamber 3, a film can be formed at a high deposition rate with good repeatability and the film forming system 1 can be downsized with requiring no heater to heat the precursor supplying pipe 5. Accordingly, it is possible to make a device and a sensor by the use of various types of metal oxide films or metal nitride films, and especially they can be used as an insulating film for capacitors in a semiconductor element. In addition, since it is possible to obtain a film of high quality in as-depo, there is no need of a conventional post process (such as a process of heat treatment), thereby reducing manpower and contributing to a cost merit for equipment and an energy merit for environment.
The present claimed invention is not limited to the above-mentioned embodiments.
For example, in the above-mentioned embodiment, the film forming system 1 forms the tantalum pentoxide (Ta2O5) film by the use of pentaethoxytantalum (Ta(OC2H5)5) as the organic tantalum compound (precursor) and n-pentane (n-C5H12) as the low boiling point organic compound, however, it is not limited to this and the tantalum pentoxide (Ta2O5) film may be formed by the use of organic tantalum compounds shown in
In addition, the film forming system 1 forms the tantalum pentoxide (Ta2O5) film, however, it may form a niobium pentoxide (Nb2O5) film. In this case, organic niobium compounds shown in
As this embodiment, comparison results between the vapor pressure of a mixed solution composed of pentaethoxyniobium (Nb(OC2H5)5) and acetone, methanol, ethanol, propane, butane, pentane and hexane as being the low boiling point organic compound and the vapor pressure of a pentaethoxyniobium (Nb(OC2H5)5) solution without mixing with the low boiling point organic compound is shown in
For the organic tantalum compound and the organic niobium compound whose constitutive element does not contain any oxygen atom, if ammonia gas is supplied, instead of oxygen, to the chamber, as shown in
Furthermore, in the above-mentioned embodiment, the injection valve is arranged in an upper part of the chamber to face the substrate, however, the injection valve may be arranged in an lower part of the chamber to face the substrate as shown in
The present claimed invention may be variously modified without departing from the spirit of the invention.
As mentioned, in accordance with the film forming system and the film forming method in accordance with this invention, since the vapor pressure of the liquid precursor containing a metal compound devoted to film forming can be raised without raising a temperature by mixing the low boiling point organic compound into the metal compound, and the film can be formed in a state the pressure in the chamber is kept in a lower degree of vacuum than a pressure of a conventional method, it is possible to restrain generation of oxygen vacancies in a metal oxide film or nitrogen vacancies in a metal nitride film, thereby to obtain the metal oxide film or the metal nitride film of high quality. Furthermore, since the liquid precursor is directly injected into the chamber, a film can be formed at a high deposition rate with good repeatability and the film forming system can be downsized with no heater required for heating the precursor supplying pipe.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2005-075835 | Mar 2005 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2006/304726 | 3/10/2006 | WO | 00 | 5/27/2009 |
