Claims
- 1. A semiconductor die, comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer,
wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution.
- 2. A semiconductor die, comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer,
wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution, wherein the planarizing solution is an aqueous etchant solution comprising an etchant and a buffer, further wherein the etchant comprises at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 3. The semiconductor die of claim 2, wherein the buffer comprises at least one buffer agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 4. The semiconductor die of claim 2, wherein the planarizing solution has a pH of approximately 1 to 5.
- 5. A semiconductor die comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer,
wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution,
wherein the planarizing solution includes an oxidizing solution comprising at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 6. The semiconductor die of claim 5, wherein the planarizing solution includes at least one buffer agent, the buffer agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 7. The semiconductor die of claim 5, wherein the planarizing solution has a pH of approximately 1 to 6.
- 8. A semiconductor die comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer,
wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution,
wherein the planarizing solution comprises an oxidizing solution comprising an oxidizer and a buffer in aqueous solution, the oxidizing solution comprising approximately 1% to 10% by weight of the oxidizer and approximately 0% to 10% by weight of the buffer.
- 9. The semiconductor die of claim 8, wherein the oxidizer comprises at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 10. The semiconductor die of claim 8, wherein the oxidizing solution has a pH of approximately 1.5 to 4.
- 11. A semiconductor die comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer,
wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution,
wherein the planarizing solution is an aqueous solution comprising approximately 1% to 5% by weight of oxalic acid and approximately 2% to 10% by weight of ammonium acetate.
- 12. The semiconductor die of claim 11, wherein the planarizing solution further includes a thickening agent.
- 13. The semiconductor die of claim 11, wherein the planarizing solution has a pH of approximately 1.5 to 3.
- 14. A semiconductor die comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer,
wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution including an etchant, the etchant having at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid, the planarizing solution having approximately 1% to 5% by weight of the etchant.
- 15. The semiconductor die of claim 14, wherein the planarizing solution further includes a buffer, the buffer having at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 16. The semiconductor die of claim 14, wherein the planarizing solution has a pH less than approximately 3.
- 17. A semiconductor die comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer,
wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution including an etchant, the etchant having one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 18. The semiconductor die of claim 17, wherein the planarizing solution further includes a buffer, the buffer having one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 19. The semiconductor die of claim 17, wherein the planarizing solution has a pH of approximately 1.5 to 3.
- 20. A semiconductor die comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer,
wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 21. The semiconductor die of claim 20, wherein the planarizing solution further includes a buffer, the buffer having one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 22. The semiconductor die of claim 20, wherein the planarizing solution is approximately 2% by weight of the oxidizing agent.
- 23. A method of fabricating a semiconductor die, comprising:
providing a substrate; and forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution including an etchant, the etchant having at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 24. The method of claim 23, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes abrading the titanium nitride layer with the planarizing solution having a pH of approximately 1 to 5.
- 25. The method of claim 23, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes abrading the titanium nitride layer with the planarizing solution having has a pH of less than approximately 3.
- 26. A method of fabricating a semiconductor die comprising:
providing a substrate; and forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 27. The method of claim 26, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution being approximately 2% by weight of the oxidizing agent.
- 28. The method of claim 26, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution having a pH of approximately 1.5 to 4.
- 29. A method of fabricating a semiconductor die comprising:
providing a substrate; and forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an oxidizer and a buffer in aqueous solution, the oxidizer having at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide, the planarizing solution having a pH of approximately 1 to 6.
- 30. The method of claim 29, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the buffer having at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 31. The method of claim 29, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution being approximately 2% by weight of the oxidizing agent.
- 32. A method of fabricating a semiconductor die comprising:
providing a substrate; and forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, wherein the planarizing solution is an aqueous solution comprising approximately 1% to 5% by weight of oxalic acid and approximately 2% to 10% by weight of ammonium acetate.
- 33. A method of fabricating a semiconductor die comprising:
providing a substrate; and forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution including an etchant and a buffer in aqueous solution, the etchant having at least one etching agent from the group consisting of oxalic acid, ascorbic, and phosphoric acid, the planarizing solution being approximately 0% to 10% by weight of the buffer.
- 34. The method of claim 33, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the buffer having at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 35. The method of claim 33, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution having a pH of approximately 1.5 to 3.
- 36. A method of fabricating a semiconductor die comprising:
providing a substrate; and forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution including an etchant and a buffer in aqueous solution, the etchant having at least one etching agent from the group consisting of oxalic acid, ascorbic, and phosphoric acid, the planarizing solution being approximately 1% to 5% by weight of the etchant and approximately 0% to 10% by weight of the buffer.
- 37. The method of claim 36, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the buffer having at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 38. The method of claim 36, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution having a pH less than approximately 3.
- 39. A method of fabricating a semiconductor die comprising:
providing a substrate; and forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution including an oxidizer and a buffer in aqueous solution, the oxidizer having at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide, the planarizing solution being approximately 1% to 10% by weight of the oxidizer and approximately 0% to 10% by weight of the buffer.
- 40. The method of claim 39, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the buffer having at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 41. The method of claim 39, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution having a pH of approximately 1.5 to 4.
RELATED APPLICATIONS
[0001] This application is a Divisional of U.S. Ser. No. 09/339,735 filed Jun. 24, 1999, which is incorporated herein by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09339735 |
Jun 1999 |
US |
Child |
10116243 |
Apr 2002 |
US |