Claims
- 1. A clean aqueous planarizing solution comprising:
an etchant having at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid; and a buffer.
- 2. The clean aqueous planarizing solution of claim 1, wherein the buffer comprises at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 3. The clean aqueous planarizing solution of claim 1, wherein the planarizing solution has a pH of approximately 1 to 5.
- 4. The clean aqueous planarizing solution of claim 1, wherein the planarizing solution has a pH of approximately 1.5 to 3.
- 5. The clean aqueous planarizing solution of claim 1, wherein the planarizing solution comprises approximately 1% to 10% by weight of the etchant and approximately 0% to 10% by weight of the buffer.
- 6. The clean aqueous planarizing solution of claim 1, wherein the planarizing solution comprises approximately 1% to 5% by weight of the etchant.
- 7. A clean aqueous planarizing solution comprising:
an oxidizer having at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide; and a buffer.
- 8. The clean aqueous planarizing solution of claim 7, wherein the buffer comprises at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 9. The clean aqueous planarizing solution of claim 7, wherein the planarizing solution has a pH of approximately 1 to 6.
- 10. The clean aqueous planarizing solution of claim 7, wherein the planarizing solution has a pH of approximately 1.5 to 4.
- 11. The clean aqueous planarizing solution of claim 7, wherein the planarizing solution comprises approximately 1% to 10% by weight of the oxidizer and approximately 0% to 10% by weight of the buffer.
- 12. The clean aqueous planarizing solution of claim 7, wherein the planarizing solution comprises approximately 1% to 5% by weight of the oxidizer and approximately 0.5% to 3% by weight of the buffer.
- 13. A clean aqueous planarizing solution comprising:
approximately 1% to 5% by weight of oxalic acid; and approximately 2% to 10% by weight of ammonium acetate.
- 14. The clean aqueous planarizing solution of claim 13, wherein the planarizing solution has a pH of approximately 1.5 to 3.
- 15. The clean aqueous planarizing solution of claim 13, further including a thickening agent.
- 16. A clean aqueous planarizing solution comprising:
an etchant having at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid; and a buffer, wherein the planarizing solution has a pH less than approximately 3.
- 17. The clean aqueous planarizing solution of claim 16, wherein the buffer comprises at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 18. The clean aqueous planarizing solution of claim 16, wherein the planarizing solution comprises approximately 1% to 5% by weight of the etchant and approximately 0% to 10% by weight of the buffer.
- 19. A clean aqueous planarizing solution comprising:
an oxidizer having at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide; and a buffer, wherein the planarizing solution has a pH less than approximately 4.
- 20. The clean aqueous planarizing solution of claim 19, wherein the buffer comprises at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 21. The clean aqueous planarizing solution of claim 20, wherein the planarizing solution comprises approximately 0.5% to 3% by weight of the buffer.
- 22. A clean aqueous planarizing solution comprising:
an oxidizer having at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide; and a buffer, wherein the oxidizer concentration is approximately 2% by weight of the planarizing solution.
- 23. The clean aqueous planarizing solution of claim 22, wherein the buffer comprises at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 24. The clean aqueous planarizing solution of claim 23, wherein the planarizing solution has a pH of approximately 1.5 to 4.
- 25. A clean aqueous planarizing solution comprising:
one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid; and one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 26. The clean aqueous planarizing solution of claim 25, wherein the planarizing solution has a pH of approximately 1.5 to 3.
- 27. The clean aqueous planarizing solution of claim 25, wherein the planarizing solution comprises approximately 1% to 5% by weight of the etchant and approximately 0% to 10% by weight of the buffer.
- 28. The clean aqueous planarizing solution of claim 25, wherein the planarizing solution further includes a thickening agent.
- 29. A clean aqueous planarizing solution comprising:
one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide; and one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 30. The clean aqueous planarizing solution of claim 29, wherein the planarizing solution has a pH of approximately 1.5 to 4.
- 31. The clean aqueous planarizing solution of claim 29, wherein the planarizing solution comprises approximately 1% to 5% by weight of the oxidizer and approximately 0.5% to 3% by weight of the buffer.
- 32. The clean aqueous planarizing solution of claim 29, wherein the planarizing solution further includes a stabilizer.
RELATED APPLICATIONS
[0001] This application is a Divisional of U.S. Ser. No. 09/339,735 filed Jun. 24, 1999, which is incorporated herein by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09339735 |
Jun 1999 |
US |
Child |
10116306 |
Apr 2002 |
US |