Claims
- 1. A memory device, comprising:
an array of memory cells; a row access circuit coupled to the array of memory cells; a column access circuit coupled to the array of memory cells; and an address decoder circuit coupled to the row access circuit and the column access circuit, wherein at least one of the memory cells, the row access circuit, the column access circuit and the address decoder circuit have a titanium nitride layer, further wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution.
- 2. A memory device, comprising:
an array of memory cells; a row access circuit coupled to the array of memory cells; a column access circuit coupled to the array of memory cells; and an address decoder circuit coupled to the row access circuit and the column access circuit, wherein at least one of the memory cells, the row access circuit, the column access circuit and the address decoder circuit have a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution, wherein the planarizing solution is an aqueous etchant solution comprising an etchant and a buffer, wherein the etchant comprises at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 3. The memory device of claim 2, wherein the buffer comprises at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 4. The memory device of claim 2, wherein the planarizing solution has a pH of approximately 1 to 5.
- 5. A memory device, comprising:
an array of memory cells; a row access circuit coupled to the array of memory cells; a column access circuit coupled to the array of memory cells; and an address decoder circuit coupled to the row access circuit and the column access circuit, wherein at least one of the memory cells, the row access circuit, the column access circuit and the address decoder circuit have a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution, wherein the planarizing solution is an aqueous oxidizing solution comprising an oxidizer and a buffer, wherein the oxidizer comprises at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 6. The memory device of claim 5, wherein the buffer comprises at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 7. The memory device of claim 5, wherein the planarizing solution has a pH of approximately 1 to 6.
- 8. A memory device, comprising:
an array of memory cells; a row access circuit coupled to the array of memory cells; a column access circuit coupled to the array of memory cells; and an address decoder circuit coupled to the row access circuit and the column access circuit, wherein at least one of the memory cells, the row access circuit, the column access circuit and the address decoder circuit have a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution, wherein the planarizing solution comprises approximately 1% to 5% by weight of oxalic acid and approximately 2% to 10% by weight of ammonium acetate.
- 9. A memory device, comprising:
an array of memory cells; a row access circuit coupled to the array of memory cells; a column access circuit coupled to the array of memory cells; and an address decoder circuit coupled to the row access circuit and the column access circuit, wherein at least one of the memory cells, the row access circuit, the column access circuit and the address decoder circuit have a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an oxidizer and a buffer, the planarizing solution being approximately 2% by weight of the oxidizer, wherein the oxidizer comprises at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 10. A memory module, comprising:
a support; a plurality of leads extending from the support; a command link coupled to at least one of the plurality of leads; a plurality of data links, wherein each data link is coupled to at least one of the plurality of leads; and at least one memory device contained on the support and coupled to the command link, wherein the at least one memory device comprises:
an array of memory cells; a row access circuit coupled to the array of memory cells; a column access circuit coupled to the array of memory cells; and an address decoder circuit coupled to the row access circuit and the column access circuit, wherein at least one of the memory cells, the row access circuit, the column access circuit and the address decoder circuit have a titanium nitride layer, further wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution.
- 11. The memory module of claim 10, wherein the planarizing solution is an aqueous etchant solution comprising an etchant and a buffer, wherein the etchant comprises at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 12. The memory module of claim 11, wherein the buffer comprises at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 13. The memory module of claim 11, wherein the planarizing solution has a pH of approximately 1 to 5.
- 14. The memory module of claim 10, wherein the planarizing solution is an aqueous oxidizing solution comprising an oxidizer and a buffer, wherein the oxidizer comprises at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 15. The memory module of claim 14, wherein the buffer comprises at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 16. The memory module of claim 14, wherein the planarizing solution has a pH of approximately 1 to 6.
- 17. The memory module of claim 10, wherein the planarizing solution is an aqueous solution comprising approximately 1% to 5% by weight of oxalic acid and approximately 2% to 10% by weight of ammonium acetate.
- 18. A memory system, comprising:
a controller; a command link coupled to the controller; a data link coupled to the controller; and a memory device coupled to the command link and the data link, wherein the memory device comprises:
an array of memory cells; a row access circuit coupled to the array of memory cells; a column access circuit coupled to the array of memory cells; and an address decoder circuit coupled to the row access circuit and the column access circuit, wherein at least one of the memory cells, the row access circuit, the column access circuit and the address decoder circuit have a titanium nitride layer, further wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution.
- 19. The memory system of claim 18, wherein the planarizing solution is an aqueous etchant solution comprising an etchant and a buffer, wherein the etchant comprises at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 20. The memory system of claim 19, wherein the buffer comprises at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 21. The memory system of claim 19, wherein the planarizing solution has a pH of approximately 1 to 5.
- 22. The memory system of claim 18, wherein the planarizing solution is an aqueous oxidizing solution comprising an oxidizer and a buffer, wherein the oxidizer comprises at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 23. The memory system of claim 22, wherein the buffer comprises at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 24. The memory system of claim 22, wherein the planarizing solution has a pH of approximately 1 to 6.
- 25. The memory system of claim 18, wherein the planarizing solution is an aqueous solution comprising approximately 1% to 5% by weight of oxalic acid and approximately 2% to 10% by weight of ammonium acetate.
- 26. A method for forming a memory device, comprising:
forming an array of memory cells; coupling a row access circuit to the array of memory cells; coupling a column access circuit to the array of memory cells; and coupling an address decoder circuit to the row access circuit and to the column access circuit, wherein at least one of the memory cells, the row access circuit, the column access circuit and the address decoder circuit have a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an etchant and a buffer, wherein the etchant includes at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 27. The method of claim 26, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the buffer having at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 28. The method of claim 26, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution having a pH of approximately 1 to 5.
- 29. A method for forming a memory device, comprising:
forming an array of memory cells; coupling a row access circuit to the array of memory cells; coupling a column access circuit to the array of memory cells; and coupling an address decoder circuit to the row access circuit and to the column access circuit, wherein at least one of the memory cells, the row access circuit, the column access circuit and the address decoder circuit have a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an oxidizer and a buffer, wherein the oxidizer includes at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 30. The method of claim 29, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the buffer having at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 31. The method of claim 29, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution having a pH of approximately 1 to 6.
- 32. A method for forming a memory device, comprising:
forming an array of memory cells; coupling a row access circuit to the array of memory cells; coupling a column access circuit to the array of memory cells; and coupling an address decoder circuit to the row access circuit and to the column access circuit, wherein at least one of the memory cells, the row access circuit, the column access circuit and the address decoder circuit have a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution being approximately 1% to 5% by weight of oxalic acid and approximately 2% to 10% by weight of ammonium acetate.
- 33. A method for forming a memory module, comprising:
providing a support; providing a plurality of leads extending from the support; coupling a command link to at least one of the plurality of leads; providing a plurality of data links; coupling each data link to at least one of the plurality of leads; attaching at least one memory device onto the support; and coupling the at least one memory device to the command link, wherein the at least one memory device includes a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an etchant and a buffer, wherein the etchant includes at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 34. The method of claim 33, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the buffer having at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 35. The method of claim 33, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution having a pH of approximately 1 to 5.
- 36. The method of claim 33, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution being approximately 1% to 5% by weight of oxalic acid and approximately 2% to 10% by weight of ammonium acetate.
- 37. A method for forming a memory module, comprising:
providing a support; providing a plurality of leads extending from the support; coupling a command link to at least one of the plurality of leads; providing a plurality of data links, coupling each data link to at least one of the plurality of leads; and attaching at least one memory device onto the support; and coupling the at least one memory device to the command link, wherein the at least one memory device includes a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an oxidizer and a buffer, wherein the oxidizer includes at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 38. The method of claim 37, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the buffer having at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 39. The method of claim 37, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution having a pH of approximately 1 to 6.
- 40. A method for forming a memory system, comprising:
providing a controller; coupling a command link to the controller; coupling a data link to the controller; and coupling a memory device to the command link and the data link, wherein the memory device includes a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an etchant and a buffer, wherein the etchant includes at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 41. The method of claim 40, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the buffer having at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 42. The method of claim 40, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution having a pH of approximately 1 to 5.
- 43. The method of claim 40, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution being approximately 1% to 5% by weight of oxalic acid and approximately 2% to 10% by weight of ammonium acetate.
- 44. A method for forming a memory system, comprising:
providing a controller; coupling a command link to the controller; coupling a data link to the controller; and coupling a memory device to the command link and the data link, wherein the memory device includes a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an oxidizer and a buffer, wherein the oxidizer includes at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 45. The method of claim 44, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the buffer having at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 46. The method of claim 44, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes the planarizing solution having a pH of approximately 1 to 6.
RELATED APPLICATIONS
[0001] This application is a Divisional of U.S. Ser. No. 09/339,735 filed Jun. 24, 1999, which is incorporated herein by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09339735 |
Jun 1999 |
US |
Child |
10115675 |
Apr 2002 |
US |