Claims
- 1. An electronic system, comprising:
a processor; and a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to at least a portion of the plurality of leads, wherein the semiconductor die comprises:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution.
- 2. The electronic system of claim 1, wherein the planarizing solution is an aqueous etchant solution comprising an etchant and a buffer, wherein the etchant comprises at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 3. The electronic system of claim 2, wherein the buffer comprises at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 4. The electronic system of claim 2, wherein the planarizing solution has a pH of approximately 1 to 5.
- 5. The electronic system of claim 1, wherein the planarizing solution is an aqueous oxidizing solution comprising an oxidizer and a buffer, wherein the oxidizer comprises at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 6. The electronic system of claim 5, wherein the buffer comprises at least one buffering agent selected from the group consisting of phosphoric acid, ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 7. The electronic system of claim 5, wherein the planarizing solution has a pH of approximately 1 to 6.
- 8. The electronic system of claim 1, wherein the planarizing solution is an aqueous solution comprising approximately 1% to 5% by weight of oxalic acid and approximately 2% to 10% by weight of ammonium acetate.
- 9. The electronic system of claim 2, wherein the planarizing solution further includes a thickening agent.
- 10. The electronic system of claim 5, wherein the planarizing solution further includes a thickening agent.
- 11. An electronic system, comprising:
a processor; and a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to at least a portion of the plurality of leads, the semiconductor die comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium comprising a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an oxidizer and a buffer, the planarizing solution being approximately 1% to 10% by weight of the oxidizer and approximately 0% to 10% by weight of the buffer.
- 12. The electronic system of claim 11, wherein the oxidizer comprises at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 13. The electronic system of claim 11, wherein the oxidizing solution has a pH of approximately 1.5 to 4.
- 14. An electronic system, comprising:
a processor; and a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to at least a portion of the plurality of leads, the semiconductor die comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an etchant, the etchant including at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid, the planarizing solution having approximately 1% to 5% by weight of the etchant.
- 15. The electronic system of claim 14, the planarizing solution further includes a buffer, the buffer having at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 16. The electronic system of claim 14, wherein the planarizing solution has a pH less than approximately 3.
- 17. An electronic system, comprising:
a processor; and a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to at least a portion of the plurality of leads, the semiconductor die comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an etchant, the etchant including one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 18. The electronic system of claim 17, wherein the planarizing solution further includes a buffer, the buffer having at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 19. The electronic system of claim 18, wherein the planarizing solution is approximately 1% to 10% by weight of the etchant and approximately 0% to 10% by weight of the buffer.
- 20. An electronic system, comprising:
a processor; and a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to at least a portion of the plurality of leads, the semiconductor die comprising:
a substrate; and an integrated circuit supported by the substrate and having a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an oxidizer, the oxidizer including one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 21. The electronic system of claim 20, wherein the planarizing solution further includes a buffer, the buffer having at least one buffering agent selected from the group consisting of ammonium acetate, ammonium oxalate, ammonium phosphate and diammonium phosphate.
- 22. The electronic system of claim 21, wherein the planarizing solution is approximately 2% by weight of the oxidizer.
- 23. A method of forming an electronic system, comprising:
providing a processor; and coupling a circuit module having a plurality of leads to the processor, the circuit module further having a semiconductor die coupled to at least a portion of the plurality of leads, the semiconductor die including an integrated circuit having a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an etchant and a buffer, the etchant including at least one etching agent selected from the group consisting of oxalic acid, ascorbic acid and phosphoric acid.
- 24. The method of claim 23, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes abrading the titanium nitride layer with the planarizing solution having a pH of approximately 1 to 5.
- 25. The method of claim 23, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes abrading the titanium nitride layer with the planarizing solution having approximately 1% to 10% by weight of the etchant and approximately 0% to 10% by weight of the buffer.
- 26. A method of forming an electronic system, comprising:
providing a processor; and coupling a circuit module having a plurality of leads to the processor, the circuit module further having a semiconductor die coupled to at least a portion of the plurality of leads, the semiconductor die including an integrated circuit having a titanium nitride layer, the titanium nitride layer planarized by a method comprising:
abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution, the planarizing solution having an oxidizer and a buffer, the oxidizer including at least one oxidizing agent selected from the group consisting of ammonium persulfate, ammonium heptamolybdate, ceric ammonium nitrate, ceric ammonium sulfate and hydrogen peroxide.
- 27. The method of claim 26, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes abrading the titanium nitride layer with the planarizing solution having a pH of approximately 1 to 6.
- 28. The method of claim 26, wherein abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a clean planarizing solution includes abrading the titanium nitride layer with the planarizing solution being approximately 1% to 10% by weight of the oxidizer and approximately 0% to 10% by weight of the buffer.
RELATED APPLICATIONS
[0001] This application is a Divisional of U.S. Ser. No. 09/339,735 filed Jun. 24, 1999, which is incorporated herein by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09339735 |
Jun 1999 |
US |
Child |
10116585 |
Apr 2002 |
US |