1. Field of the Invention
The present invention relates generally to semiconductor, and more particularly, to a flip-chip process by photo-curing adhesive.
2. Description of the Related Art
A conventional flip-chip process is to carry a chip on a substrate. However, the coefficient of thermal expansion (15 ppm/° C.) of the substrate is different from that (2.5 ppm/° C.) of the chip, what is between the substrate and the chip is subject to shear failure to have fatigue crack and imperfect contact.
Referring to
The primary objective of the present invention is to provide a flip-chip process by photo-curing adhesive, wherein the flip-chip process definitely improves the drawbacks of the prior art, avoiding formation of air bubbles, and increases the yield of production.
The foregoing objective of the present invention is attained by the flip-chip process including the steps of disposing a plurality of spherical contact members on a surface of a wafer; forming a photo-curing adhesive layer on the surface of the wafer, wherein said photo-curing adhesive layer covers a part of each of the spherical contact members to expose the spherical contact members of the photo-curing adhesive layer; solidifying the photo-curing adhesive layer by exposure; cutting the wafer into a plurality of chip units; placing the chip units on a substrate to let the spherical contact members lie against contact points of the substrate; and pressurizing the chip units and then heating the spherical contact potions to enable the spherical contact members to be welded and electrically connected with the chip units and the contact points of the substrate.
Referring to
a) Dispose a plurality of spherical contact members 10 on a top side of a wafer 20, as shown in
b) Form a photo-curing adhesive layer 30 on a top side of the wafer 20 by spin coating, as shown in
c) Expose the photo-curing adhesive layer 30 by ultraviolet rays to solidify and attach the photo-curing adhesive layer 30 to the top side of the wafer 20.
d) Cut the wafer 20 into a plurality of chip units 22.
e) Put the chip units 22 on a top side of a substrate 40 having a plurality of contact points 42, as shown in
f) Pressurize the chip units 22 and then heat the spherical contact members 10, as shown in
In conclusion, the present invention can definitely improve the drawbacks of the prior art, preventing the air bubbles from generation between the chip units and the substate 40 and preventing the photo-curing adhesive layer 30 and the spherical contact members 10 from the shear failure to further overcome the fatigue crack and the imperfect contact. Compared with the prior art, the present invention causes better yield of production, and the photo-curing adhesive layer of the present invention can provide better rigidity and adherence to cause better overall structural mechanical strength.
Although the present invention has been described with respect to a specific preferred embodiment thereof, it is no way limited to the details of the illustrated structures but changes and modifications may be made within the scope of the appended claims.
Number | Date | Country | Kind |
---|---|---|---|
97118218 | May 2008 | TW | national |