Claims
- 1. A method for forming a photoresist relief image, comprising:
(a) applying a photoresist composition on a substrate, the photoresist comprising a resin and a photoactive component, the resin comprising fluorine-substituted phenolic units and photoacid-labile groups; (b) exposing the photoresist to activating radiation and developing the exposed photoresist layer.
- 2. The method of claim 1 wherein the photoresist is exposed with radiation having a wavelength of less than about 200 nm.
- 3. The method of claim 1 wherein the photoresist is exposed with radiation having a wavelength of less than about 170 nm.
- 4. The method of claim 1 wherein the photoresist is exposed with radiation having a wavelength of less than about 160 nm.
- 5. The method of claim 1 wherein the photoresist is exposed with radiation having a wavelength about 157 nm.
- 6. The method of claim 1 wherein the photoresist is exposed with radiation having a wavelength of less than about 300 nm.
- 7. The method of any one of claims 1 through 6 wherein the resin comprises one or more photoacid generator compounds.
- 8. The method of any one of claims 1 through 7 wherein the resin comprises polymerized vinylphenol units.
- 9. The method of any one of claims 1 through 8 wherein the fluorinated phenolic units are substituted at one or more phenolic ring position by F or fluoroalkyl.
- 10. The method of any one of claims 1 through 8 wherein the fluorinated phenolic units are substituted at one or more phenolic ring position by F or —CF3.
- 11. The method of any one of claims 1 through 10 wherein the resin comprises halogen, halogenated alkyl, nitro, nitrile, cyano, sulfinyl, or sulfonyl groups.
- 12. The method of any one of claims 1 through 11 wherein the resin comprises at least one other repeat unit that is distinct from the fluorinated phenolic units.
- 13. The method of any one of claims 1 through 11 wherein the resin comprises at least two other repeat units that are distinct from the fluorinated phenolic units.
- 14. The method of any one of claims 1 through 13 wherein the resin is a terpolymer.
- 15. The method of any one of claims 1 through 13 wherein the resin is a tetrapolymer.
- 16. The method of any one of claims 1 through 13 wherein the resin is a pentapolymer.
- 17. The method of any one of claims 1 through 16 wherein the resin comprises photoacid-labile groups that are distinct units from the fluorinated phenolic units.
- 18. The method of any one of claims 1 through 16 wherein the resin comprises photoacid-labile groups that are present on the fluorinated phenolic units.
- 19. The method of any one of claims 1 through 18 wherein the resin comprises photoacid-labile groups that are ester groups, acetal groups, ketal groups or formal groups.
- 20. The method of any one of claims 1 through 18 wherein the resin further comprises photoacid-labile alkyl acrylate units.
- 21. The method of any one of claim 1 through 20 wherein the resin comprises optionally substituted polymerized styrene units that do not contain hydroxy, carboxy or photoacid labile ring substituents.
- 22. The method of any one of claims 1 through 8 wherein the resin consists essentially of 1) the fluorinated phenolic units and 2) alkyl acrylate photoacid-labile units.
- 23. The method of any one of claims 1 through 8 wherein the resin-consists essentially of 1) the fluorinated phenolic units, 2) alkyl acrylate photoacid-labile units, and 3) optionally substituted polymerized styrene units that do not contain hydroxy, carboxy or photoacid labile ring substituents.
- 25. A photoresist comprising a resin and a photoactive component, the resin comprising fluorine-substituted phenolic units and photoacid-labile groups.
- 26. The photoresist of claim 25 wherein the photoresist comprises one or more photoacid generator compounds.
- 27. The photoresist of claim 25 or 26 wherein the resin comprises polymerized fluorinated vinylphenol units.
- 28. The photoresist of any one of claims 25 through 27 wherein the fluorinated phenolic units are substituted at one or more phenolic ring position by F, fluoroalkyl, or fluoroether.
- 29. The photoresist of any one of claims 25 through 28 wherein the fluorinated phenolic units are substituted at one or more phenolic ring position by F or —CF3.
- 30. The photoresist of any one of claims 25 through 29 wherein the resin comprises halogen, halogenated alkyl, nitro, nitrile, cyano, sulfinyl, or sulfonyl groups.
- 31. The photoresist any one of claims 25 through 30 wherein the resin comprises at least one other repeat unit that is distinct from the fluorinated phenolic units.
- 32. The photoresist of any one of claims 25 through 30 wherein the resin comprises at least two other repeat units that are distinct from the fluorinated phenolic units.
- 33. The photoresist of any one of claims 25 through 32 wherein the resin is a terpolymer.
- 34. The photoresist of any one of claims 25 through 32 wherein the resin is a tetrapolymer.
- 35. The photoresist of any one of claims 25 through 32 wherein the polymer is a pentapolymer.
- 36. The photoresist of any one of claims 25 through 35 wherein the resin comprises photoacid-labile groups that are distinct units from the fluorinated phenolic units.
- 37. The photoresist of any one of claims 25 through 35 wherein the resin comprises photoacid-labile groups that are present on the fluorinated phenolic units.
- 38. The photoresist of any one of claims 25 through 37 wherein the resin comprises photoacid-labile groups that are ester groups, acetal groups, ketal groups or formal groups.
- 39. The photoresist of any one of claims 25 through 38 wherein the resin further comprises photoacid-labile alkyl acrylate units.
- 40. The photoresist of any one of claim 25 through 39 wherein the resin comprises optionally substituted polymerized styrene units that do not contain hydroxy, carboxy or photoacid labile ring substituents.
- 41. The photoresist of any one of claims 25 through 40 wherein the resin consists essentially of 1) the fluorinated phenolic units and 2) alkyl acrylate photoacid-labile units.
- 42. The photoresist of any one of claims 25 through 40 wherein the resin consists essentially of 1) the fluorinated phenolic units, 2) alkyl acrylate photoacid-labile units, and 3) optionally substituted polymerized styrene units that do not contain hydroxy, carboxy or photoacid labile ring substituents.
- 43. An article of manufacture comprising a substrate having thereon a photoresist of any one of claims 25 through 42.
- 44. An article of claim 43 wherein the substrate is a microelectronic wafer or an optical-electronic substrate.
- 45. An optionally protected alkenetetrafluorophenol compound.
- 46. The compound of claim 45 wherein the compound is C6F4(OH)(C2-12alkene).
- 47. The compound of claim 45 that is optionally protected 4-hydroxy-2,3,5,6-tetrafluorostyrene, 3-hydroxy-2,4,5,6-tetrafluorostyrene, 4-hydroxy-2,3,5,6-tetrafluoro(α-methylstyrene), 3-hydroxy-2,4,5,6-tetrafluoro(α-methylstyrene)styrene, 4-hydroxy-2,3,5,6-tetrafluoro(α-trifluoromethylstyrene), or 3-hydroxy-2,4,5,6-tetrafluoro(α-trifluoromethylstyrene).
- 48. The compound of any one of claims 45 through 47 wherein one or more of the alkene carbons are is fluorinated at one or more available positions.
- 49. The compound of any one of claims 45 through 48 wherein the phenol compound is fluoro-substituted at 2, 3, 5, 6 positions.
- 50. The compound of claim 48 or 49 wherein the alkene carbons or the phenol are fluorinated by F or triflouromethyl.
Parent Case Info
[0001] This application claims the benefit of U.S. provisional application No. 60/231,274 filed Sep. 8, 2000, and U.S. provisional application No. 60/253,118, filed Nov. 27, 2000, both incorporated herein by reference.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60231274 |
Sep 2000 |
US |
|
60253118 |
Nov 2000 |
US |