Claims
- 1. A gaseous precursor mixture from which semiconductor alloy material may be deposited by glow discharge decomposition:
- said mixture including a polysilane compound and a germanium-containing compound, said compounds capable of decomposing and depositing at substantially similar rates when subjected to electromagnetic energy; and said polysilane compound having the general formula Si.sub.x R.sub.y H.sub.z, where R is chosen from the group consisting essentially of hydrogen, fluorine, chlorine, iodine, bromine and combinations thereof, x is an integer greater than one, y and z are each an integer or zero, and y+z=2x+2.
- 2. A mixture as in claim 1, further including a diluent gas.
- 3. A mixture as in claim 2, wherein the diluent gas is hydrogen.
- 4. A mixture as in claim 1, further including a gaseous precursor source of fluorine.
- 5. A mixture as in claim 4, wherein said source of fluorine is silicon tetrafluoride.
- 6. A mixture as in claim 1, wherein said mixture further includes a source of hydrogen.
- 7. A mixture as in claim 1, wherein said mixture further includes a gaseous precursor source of a dopant element.
- 8. A mixture as in claim 7, wherein said dopant element is phosphorous.
- 9. A mixture as in claim 7, wherein said dopant element is boron.
Parent Case Info
This is a continuation of application Ser. No. 718,661 filed Apr. 1, 1985.
US Referenced Citations (4)
Number |
Name |
Date |
Kind |
4363868 |
Takasaki et al. |
Dec 1982 |
|
4388344 |
Shuskus et al. |
Jun 1983 |
|
4405656 |
Shimizu et al. |
Sep 1983 |
|
4517223 |
Ovshinsky et al. |
May 1985 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
718661 |
Apr 1985 |
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