The present invention relates to a high-frequency amplifier unit and a high-frequency power amplification apparatus each having the arrangement of high-frequency amplifiers including semiconductor devices.
In recent years, semiconductor devices with high output power, such as GaN FET and LD-MOS, have become widespread as power amplification devices with high-frequency signals. Such semiconductor devices, which have long service life, are increasingly used in high-output power amplification apparatuses which typically include amplifiers formed of vacuum devices.
In configuring a high-output power amplification apparatus with high-frequency signals which includes a semiconductor device, a single semiconductor device has output power lower than that of the vacuum device, leading to a need for power combination. Also, the high-output power amplification apparatus requires means for dissipating heat from each semiconductor device, and for higher output of a semiconductor device, the structure for power division, power combination, and heat radiation needs to be achieved in small size at low cost.
In order to meet such a need, Japanese Patent Laying-Open No. 61-27092 (see PTD 1) describes a high-frequency heating apparatus including a conductor plate and a radiating fin which is attached to the conductor plate in intimate surface contact therewith. Mounted in the conductor plate are an amplification circuit substrate and a solid-state component that forms at least an amplification portion of a solid high-frequency generation portion that is a high-frequency heating source.
Japanese Patent Laying-Open No. 2001-135965 (see PTD 2) describes an electronic apparatus in which cooling pipes, which have conventionally been configured for each line of electronics module, are integrated together to form a cooling layer as a structural component, and refrigerant passages, each configured between lines of electronics modules, are shaped into a flat rectangle. This leads to a dramatically improved cooling capability.
Japanese Patent Laying-Open No. 06-61389 (see PTD 3) describes a heat-pipe-connected semiconductor device in which a plurality of semiconductor accommodating packages accommodating semiconductors therein are continuously connected by a loop heat pipe formed annularly and shaped into a narrow tube, the loop heat pipe is filled with a condensable operating fluid to cause the operating fluid to contact the semiconductor devices accommodated in the semiconductor packages, and the plurality of semiconductor accommodating packages are arranged asymmetrically to the loop heat pipe.
In the high-frequency heating apparatus described in PTD 1, the radiating fin which is attached to the conductor plate in intimate surface contact therewith, in which the solid element that forms the amplification portion and the amplification circuit substrate are mounted, is subjected to forced-air cooling by cooling fans. This configuration employs an air cooling method, leading to poor cooling efficiency.
In the electronic apparatus described in PTD 2, the cooling layer that cools the electronics modules have a structure with a cooling passage formed into a flat rectangle. This structure causes the electronic modules to be arranged in the cooling layer planarly (two-dimensionally), increasing the size of the electronic apparatus.
In the heat-pipe-connected semiconductor device described in PTD 3, the plurality of semiconductor accommodating packages are continuously connected by the loop heat pipe formed annularly and shaped into a narrow tube. This configuration increases the dimensions of the heat-pipe-connected semiconductor device including the loop heat pipe. Also, the loop heat pipe may be routed in a complicated manner when the dimensions of the heat-pipe-connected semiconductor device are to be reduced.
The present invention has been made to solve the above problems, and has an object to provide a high-frequency amplifier unit and a high-frequency power amplification apparatus which have small size and good cooling efficiency.
A high-frequency amplifier unit and a high-frequency power amplification apparatus according to the present invention include a cooler having a first surface on which a first high-frequency amplifier is installed in intimate contact therewith and a second surface which is opposite to the first surface and on which a second high-frequency amplifier is installed in intimate contact therewith. The first high-frequency amplifier amplifies a high-frequency signal and outputs an amplified high-frequency signal from an output terminal thereof. The second high-frequency amplifier amplifies a high-frequency signal and outputs an amplified high-frequency signal from an output terminal thereof. The cooler includes, on a third surface thereof, a first cooler terminal through which refrigerant flows into the cooler and a second cooler terminal through which the refrigerant flows out of the cooler. The third surface intersects the first surface and the second surface.
The present invention includes two high-frequency amplifiers installed on the first surface of the cooler and the second surface of the cooler opposite to the first surface, thus achieving a small-sized high-frequency amplifier unit capable of efficiently cooling the high-frequency amplifier. The use of this high-frequency amplifier unit allows miniaturization of the high-frequency power amplification apparatus that combines output powers of the plurality of high-frequency amplifiers and outputs combined output power.
High-frequency power amplification apparatus 101 includes a power divider 5 that divides the high-frequency signal output from high-output amplifier 4, high-output power amplification portion 1 formed of a plurality of high-frequency amplifier units 6 formed of semiconductors that receive input of the divided high-frequency signals and then amplify these signals to high-output power, and a power combiner 7 that combines the high-frequency signals amplified by the respective high-frequency amplifier units 6 of high-output power amplification portion 1.
Input terminals of preamplifier 3, high-output amplifier 4, power divider 5, and high-frequency amplifier unit 6 are connected to each other by a coaxial cable 8. An output terminal of high-frequency amplifier unit 6 and power combiner 7 are connected to each other by a coaxial connector, which is not shown in
Preamplifier 3 and high-output amplifier 4 are accommodated in a driver case 2a. High-frequency amplifier units 6 are accommodated in a high-output power amplification portion case 1a. Driver case 2a that accommodates power divider 5 and power combiner 7 is fixed to high-output power amplification portion case 1a.
The configuration of high-frequency amplifier unit 6 will be described with reference to the drawings.
With reference to
In
In
Since first high-frequency amplifier 12 or second high-frequency amplifier 13 needs to be attached to the opposite surfaces of cooler 11, as shown in
An interface for attaching first high-frequency amplifier 12 and second high-frequency amplifier 13 to cooler 11 is arranged to prevent overlap of the screw positions on the front and rear surfaces of cooler 11 and also prevent the division of a passage inside cooler 11, and is provided with a point symmetry structure. This structure allows high-frequency amplifiers to be arranged in any direction or in any combination. Passage interfaces (first cooler terminal 11d and second cooler terminal 11e) of cooler 11 are configured such that both the input and output thereof are collected on one side of cooler 11 (that is, collected on third surface 11c) and that the side opposite to the surface with the flow-path interface (that is, fourth surface 11f) is the power combiner 7 side. This configuration allows high-frequency amplifier unit 6 and power combiner 7 to be connected to each other by a coaxial connector with a shortest path to minimize the distance between high-frequency amplifier unit 6 and power combiner 7 and minimize a loss at the connection part between high-frequency amplifier unit 6 and power combiner 7.
High-frequency amplifier unit 6 has a sandwich structure in which first high-frequency amplifier 12 and second high-frequency amplifier 13 sandwich cooler 11. Preamplifier 3 is installed in place of first high-frequency amplifier 12 and high-output amplifier 4 is installed in place of second high-frequency amplifier 13 in cooler 11, allowing cooling of preamplifier 3 and high-output amplifier 4, that is, cooling of driver 2. This leads to standardization of the cooler for first high-frequency amplifier 12 and second high-frequency amplifier 13 and the cooler for preamplifier 3 and high-output amplifier 4.
A power division circuit is provided in case 5a. The power division circuit is formed on the surface of a dielectric substrate 5f made of ceramic or resin (e.g., glass epoxy) and is formed of a microstrip line. This power division circuit is connected with input terminal 5c and output terminals 5e.
For example, at a frequency of about 2.45 GHz, an opening size of a standard waveguide is as very large as 109.22 mm×54.61 mm in EIAJ standard, WRI-22. Embodiment 1 provides a configuration in which the inputs of high-frequency amplifier unit 6 and power combiner 7 are connected by a coaxial connector, and subsequently, power combination is performed in the waveguide, leading to miniaturization.
Cooler 11 of high-frequency amplifier unit 6 and cooler 11 of driver 2 are each connected to passage combiner 26 by a return division pipe 25. Passage combiner 26 and heat exchanger 21 are connected to each other by a return main pipe 27.
In
An electrical operation of high-frequency power amplification apparatus 101 according to Embodiment 1 will be described with reference to
The high-frequency signal amplified to the second high-frequency power level output from the output terminal of high-output amplifier 4 is input to input terminal 5c of power divider 5, and is divided into values twice the number of high-frequency amplifier units 6, and the divide signals are subsequently output from division terminals 5e. In Embodiment 1, 8-way division is performed. This is because high-frequency amplifier unit 6 includes two high-frequency amplifiers, namely, first high-frequency amplifier 12 and second high-frequency amplifier 13. At this time, the high-frequency power level output from division terminal 5e is a third high-frequency power level. The high-frequency signals of the third high-frequency power level output from the division terminals of power dividers 5 are input to the respective input terminals (12b, 13b) of first high-frequency amplifiers 12 and second high-frequency amplifiers 13 of the respective high-frequency amplifier units 6. Hereinafter, first high-frequency amplifier 12 and second high-frequency amplifier 13 are described as the same high-frequency amplifiers.
The high-frequency signals of the third high-frequency power level input to the respective input terminals (12b, 13b) of first high-frequency amplifier 12 and second high-frequency amplifier 13 are amplified to a fourth high-frequency power level, and are subsequently output from the respective output terminals (12a, 13a) of first high-frequency amplifier 12 and second high-frequency amplifier 13. The high-frequency signals of the fourth high-frequency power level output from the output terminals (12a, 13a) of first high-frequency amplifier 12 and second high-frequency amplifier 13 of each high-frequency amplifier unit 6 are input to corresponding input terminals 71a of power combiner 7 (in
High-frequency power amplification apparatus 101 can also operate as an oscillator by mounting oscillator 3a in preamplifier 3, inputting an output signal of oscillator 3a to input terminal 3b of preamplifier 3, and regarding the input signal as an input signal of the high-frequency signal of preamplifier 3. The configuration of preamplifier 3, high-output amplifier 4, and high-frequency amplifier units 6 which is composed based on predetermined output power is provided as a semiconductor amplifier, so that the configuration of a high-frequency power amplification apparatus with different output powers can be achieved relatively easily.
For example,
High-frequency amplifier unit 6 has a configuration divided in units of high-frequency amplifiers (first high-frequency amplifier 12, second high-frequency amplifier 13). This configuration yields an effect that in the event of a breakdown of the high-frequency amplifiers (first high-frequency amplifier 12, second high-frequency amplifier 13) of any of m high-frequency amplifier units 6, high-frequency amplification apparatus 101 can continue operation though the output power thereof decreases, unlike in the event of a breakdown of a vacuum device such as a traveling-wave tube (TWT).
The structure in which preamplifier 3, high-output amplifier 4, and high-frequency amplifiers (first high-frequency amplifiers 12, second high-frequency amplifiers 13) are mounted to cooler 11 is arranged at a position shown in
The exhaust heat passage and operation of high-frequency power amplification apparatus 101 according to Embodiment 1 will now be described with reference to
In cooler 11, the refrigerant that has absorbed the heats generated in first high-frequency amplifier 12, second high-frequency amplifier 13, preamplifier 3, and high-output amplifier 4 is emitted from second cooler terminals 11e of coolers 11 of high-frequency amplifier units 6 and driver 2, passes through return division pipe 25, and is returned to the return input of passage combiner 26. The number of return inputs and the number of return division pipes 25 are equal to a total count of high-frequency amplifier units 6 and driver 2. The refrigerants that have returned to the return input of passage combiner 26 meet at passage combiner 26, and the combined refrigerant passes through return main pipe 27 and returns to heat exchanger 21. Heat exchanger 21 exhausts the heat of the refrigerant to the outside so that the refrigerant is cooled, and the refrigerant is again sent form heat exchanger 21 to feed main pipe 23.
High-frequency amplifiers (first high-frequency amplifier 12, second high-frequency amplifier 13), preamplifier 3, and high-output amplifier 4 are installed to cooler 11 while sandwiching cooler 11 from the opposite sides of cooler 11, leading to a large area for heat exchange of cooler 11, which enables efficient cooling in reduced space.
In
In
That is to say, the output terminal of driver 2 and the input terminal of power divider 51 are coupled to each other by fitting, and output terminal 51c of power divider 51 and input terminals of high-frequency amplifier unit 6 (first high-frequency amplifier 12, second high-frequency amplifier 13) are coupled by fitting. This integrates driver 2, power divider 51, and high-frequency amplifier unit 6 (first high-frequency amplifier 12, second high-frequency amplifier 13), leading to miniaturization of high-frequency power amplification apparatus 101.
The embodiments disclosed herein are illustrative and non-restrictive in every respect, and may be employed in an appropriate combination.
1 high-output power amplification portion, 1a high-output power amplification portion case, 2 driver, 2a driver case, 3 preamplifier, 3a oscillator, 3b input terminal, 4 high-output amplifier, 5 power divider, 5a case, 5b first lateral surface, 5c input terminal, 5d second lateral surface, 5e output terminal, 5f dielectric substrate, 6 high-frequency amplifier unit, 7 power combiner, 71 coaxial waveguide conversion portion, 71a coaxial connector (input terminal), 71b probe, 71c waveguide, 72 waveguide combination portion, 72a output terminal, 8 coaxial cable, 11 cooler, 11a first surface, 11b second surface, 11c third surface, 11d first cooler terminal, 11e second cooler terminal, 11f fourth surface, 12 first high-frequency amplifier, 12a output terminal, 12b input terminal, 13 second high-frequency amplifier, 13a output terminal, 13b input terminal, 21 heat exchanger, 22 passage divider, 23 feed main pipe, 24 feed division pipe, 25 return division pipe, 26 passage combiner, 27 return main pipe, 51 power divider, 51a multilayer substrate, 51b through-hole, 51c output terminal, 101 high-frequency power amplification apparatus.
Number | Date | Country | Kind |
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2016-090264 | Apr 2016 | JP | national |
Filing Document | Filing Date | Country | Kind |
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PCT/JP2017/016653 | 4/27/2017 | WO | 00 |