Claims
- 1. A high pressure chamber for processing of a semiconductor substrate comprising:
a. a high pressure processing cavity for the semiconductor substrate; b. a plurality of injection nozzles oriented into the high pressure processing cavity at a vortex angle, the plurality of injection nozzles operable to produce a vortex over a surface of the semiconductor substrate; and c. first and second outlet ports located proximate to a center of the plurality of injection nozzles, the first and second outlet ports operable in a first time segment to provide an operating outlet out of the first outlet port and operable in a second time segment to provide the operating outlet out of the second outlet port.
- 2. The high pressure processing chamber of claim 1 wherein the high pressure processing cavity comprises a semiconductor substrate holding surface, an outlet port surface opposite to the semiconductor wafer holding surface, and a cylindrical surface coupling the semiconductor substrate holding surface to the outlet port surface.
- 3. The high pressure processing chamber of claim 2 wherein the cylindrical surface includes the plurality of injection nozzles.
- 4. The high pressure processing chamber of claim 2 wherein the outlet port surface includes the first and second outlet ports.
- 5. The high pressure processing chamber of claim 4 wherein the high pressure processing cavity comprises a proximately uniform distance between the semiconductor substrate holding surface and the outlet port surface.
- 6. The high pressure processing chamber of claim 4 wherein the high pressure processing cavity comprises a non-uniform distance between the semiconductor substrate holding surface and the outlet port surface.
- 7. The high pressure processing chamber of claim 6 wherein the non-uniform distance comprises a maximum at an outer edge of the outlet port surface and a minimum at a center of the outlet port surface.
- 8. The high pressure processing chamber of claim 6 wherein the non-uniform distance comprises a first distance at an outer edge of the outlet port surface, a second distance at an intermediate position between the outer edge and a center of the outlet port surface, and a third distance at the center of the outlet port surface, and further wherein the first distance and the third distance are each greater than the second distance.
- 9. A high pressure chamber for processing of a semiconductor substrate comprising:
a. a high pressure processing cavity comprising a semiconductor substrate holding surface, an outlet port surface opposite to the semiconductor wafer holding surface, and a cylindrical surface coupling the semiconductor substrate holding surface to the outlet port surface; b. a plurality of injection nozzles located in the cylindrical surface and oriented at a vortex angle, the plurality of injection nozzles operable to produce a vortex over a surface of the semiconductor substrate; and c. first and second outlet ports located in the outlet port surface proximate to a center of the plurality of injection nozzles, the first and second outlet ports operable in a first time segment to provide an operating outlet out of the first outlet port and operable in a second time segment to provide the operating outlet out of the second outlet port.
- 10. A high pressure chamber for processing of a semiconductor substrate comprising:
a. a high pressure processing cavity comprising a semiconductor substrate holding surface, an outlet port surface opposite to the semiconductor wafer holding surface, and a cylindrical surface coupling the semiconductor substrate holding surface to the outlet port surface, the high pressure processing cavity comprising a non-uniform distance between the semiconductor substrate holding surface and the outlet port surface, the non-uniform distance comprising a first distance at an outer edge of the outlet port surface, a second distance at an intermediate position between the outer edge and a center of the outlet port surface, and a third distance at the center of the outlet port surface, where the first distance and the third distance are each greater than the second distance; b. a plurality of injection nozzles located in the cylindrical surface and oriented at a vortex angle, the plurality of injection nozzles operable to produce a vortex over a surface of the semiconductor substrate; and c. first and second outlet ports located in the outlet port surface proximate to a center of the plurality of injection nozzles, the first and second outlet ports operable in a first time segment to provide an operating outlet out of the first outlet port and operable in a second time segment to provide the operating outlet out of the second outlet port.
RELATED APPLICATIONS
[0001] This application claims priority from U.S. Provisional Patent Application No. 60/283,132, filed on Apr. 10, 2001, which is incorporated by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60283132 |
Apr 2001 |
US |