Claims
- 1. A method of heat treating a wafer, comprising the steps of:positioning the wafer proximate to a heat source; and heating the wafer concurrently by both radiation and conduction, and where the percentage of heat transferred to the wafer by conduction is in the range of about 30 to 90%.
- 2. The method of claim 1 where the percentage of heat transferred to the wafer by conduction is in the range of about 40 to 80%.
- 3. The method of claim 1 where the percentage of heat transferred to the wafer by conduction is in the range of about 50 to 70%.
- 4. The method of claim 1 further including varying the distance of the wafer proximate to the heat source during heating of the wafer.
- 5. The method of claim 1 wherein the wafer is positioned within 2 mm of the heat source.
- 6. The method of claim 1 wherein the distance is varied over the range of 2 mm to 0.2 mm.
- 7. The method of claim 4 wherein the distance is varied over the range of 2 mm to 0.2 mm.
- 8. The method of claim 1 further comprising the steps of:delivering a fluid to the wafer; and rotating the wafer.
- 9. The method of claim 1 wherein the wafer is rotated at a speed in the range of 5 to 15 r.p.m.
RELATIONSHIP TO CO-PENDING APPLICATIONS
This is a division of application Ser. No. 09/373,894 filed Aug. 12, 1999 now U.S. Pat. No. 6,300,600.
This application is a continuation-in-part of Provisional U.S. Application Ser. No.: 60/096,283; filed on Aug. 12, 1998; entitled “Linear RTP Reactor” and incorporated herein by reference.
US Referenced Citations (21)
Provisional Applications (1)
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Number |
Date |
Country |
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60/096283 |
Aug 1998 |
US |