This invention is related generally to integrated circuits, and more particularly to fabrication processes of the interconnect structures in the integrated circuits.
Conductive lines or interconnect structures are used to connect devices in integrated circuits and to connect to external pads. A significant problem in the formation of interconnect structures is the parasitic capacitances between metal lines. Parasitic capacitances cause an increase in RC delay. In some high-speed circuits, interconnect capacitances can be the limiting factor in the speed of the integrated circuit. It is thus desirable to reduce the interconnect capacitances. Accordingly, low dielectric constant (low k) materials have been increasingly used.
After the deposition of low-k dielectric layer 8, an ultraviolet (UV) curing is performed to drive porogen out of low-k dielectric layer 8 so that a porous structure is formed. The UV curing, however, also affects the ESL layer 6 due to the penetration of UV lights through low-k dielectric layer 8. Exposed to UV light, the stress in ESL 6 is typically changed toward the tensile side. For example, a sample ESL initially has a compressive stress of about 281 MPa. When exposed to UV light for about nine minutes, the stress is changed to a tensile stress of about 290 MPa. If exposed to UV light for nine more minutes, the tensile stress further increases to about 418 MPa.
One of the conventional methods to solve the problem is to form ESLs with a very high compressive stress when deposited. This high initial stress means that even though the stress of the ESLs are changed toward the tensile side after the UV curing, the resulting stress will still be compressive, although with a smaller value. Such a solution, however, suffers drawbacks. The highly compressive ESLs typically have high k values, resulting in degradation of the RC delay. High compressive stress may also cause wafer-cracking. In addition, with the complexity of forming highly compressive stressed ESLs, the throughput is also reduced.
In accordance with one aspect of the present invention, an integrated circuit includes an etch stop layer over a substrate; a UV blocker layer on the etch stop layer, wherein the UV blocker layer has a high extinction coefficient; and a low-k dielectric layer on the UV blocker layer.
In accordance with another aspect of the present invention, a semiconductor structure includes a first dielectric layer over a semiconductor substrate; an etch stop layer comprising silicon carbonitride over the dielectric layer; an initiation layer on the etch stop layer, wherein the initiation layer has an extinction coefficient of greater than about 0.11 and a refractive index of greater than about 1.74 for a UV light used for curing; a low-k dielectric layer on the initiation layer, and a copper feature in the low-k dielectric layer.
In accordance with yet another aspect of the present invention, a method of forming an integrated circuit includes forming a dielectric layer over a semiconductor substrate; forming an etch stop layer over the dielectric layer; forming an initiation layer on the etch stop layer, wherein the initiation layer has an extinction coefficient of greater than about 0.11 for a UV light; forming a low-k dielectric layer on the initiation layer; and curing the low-k dielectric layer with the UV light.
In accordance with yet another aspect of the present invention, a method of forming an integrated circuit includes forming an etch stop layer having a compressive stress over a semiconductor substrate; forming a low-k dielectric layer over the etch stop layer; curing the low-k dielectric layer with an ultraviolet (UV) light; and attenuating the UV light from reaching the etch stop layer by forming a blocker layer between the low-k dielectric layer and the etch stop layer, wherein process conditions for forming the blocker layer are adjusted to increase an attenuation rate of the UV light penetrating the blocker layer.
With an UV blocker layer on the etch stop layer, the stress change in the etch stop layer due to UV curing is reduced.
For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.
A novel method for forming an interconnect structure is provided. The intermediate stages for manufacturing the preferred embodiment of the present invention are illustrated. Throughout the various views and illustrative embodiments of the present invention, like reference numbers are used to designate like elements. Although dual damascene processes are discussed in the preferred embodiment of the present invention, one skilled in the art will realize that the concept taught is readily available for the formation of single damascene processes.
Initiation layer 26 is formed on ESL 24 and acts as an adhesion promoter. Initiation layer 26 has a better adhesion with the underlying ESL 24 and the subsequently formed overlying low-k dielectric layer than the adhesion between ESL 24 and the overlying low-k dielectric layer. Initiation layer 26 preferably includes silicon, oxygen, carbon, hydrogen, and combinations thereof.
Initiation layer 26 also acts as an ultraviolet (UV) blocker layer, and hence is referred to as a blocker layer throughout the description. When the low-k dielectric layer over the initiation layer 26 is formed and an UV curing is performed to cure the low-k dielectric layer, initiation layer 26 preferably blocks as much UV light as possible, so that the underlying ESL 24 is exposed to as little UV light as possible. In the preferred embodiment, initiation layer 26 has a relatively high extinction coefficient (k) and/or a high refractive index (n). As is known in the art, a high extinction coefficient and a high refractive index, particularly a high extinction coefficient, are beneficial for reducing the penetration of UV light. Preferably, the extinction coefficient of initiation layer 26 is about 0.11 or greater. The refractive index of initiation layer 26 is preferably about 1.74 or greater. Initiation layer 26 preferably has a thickness of between about 0.7 nm and about 45 nm, and is preferably formed using PECVD, high-density plasma chemical vapor deposition (HDPCVD), sub-atmospheric (SACVD), or the like.
It has been found that the extinction coefficient and the refractive index of initiation layer 26 are significantly affected by process conditions. In the experiments performed for studying the effects of the process conditions, a first sample initiation layer is formed with one set of process conditions, and the extinction coefficient and the refractive index are measured. The process conditions are then changed to form other sample initiation layers. The results have shown that by decreasing chamber pressure, decreasing mDEOS flow rate, decreasing RF power, and/or decreasing oxygen flow rate, the resulting sample initiation layers have increased extinction coefficients and increased refractive indices over the first sample initiation layer. This clearly indicates the effects of the process conditions on the extinction coefficient and the refractive index.
In the preferred embodiment of the present invention, the preferred process conditions for forming initiation layer 26 include a wafer temperature of between about 250° C. and about 350° C.; a chamber pressure of between about 1 torr and about 10 torr; a radio frequency (RF) power of between about 100 W and about 500 W; and a precursor flow rate of between about 100 sccm and about 500 sccm, wherein the precursors preferably include dimethyldiethoxysilane (mDEOS) and oxygen. The flow rate of oxygen is preferably less than about 450 sccm, and may even be turned off. In addition, the chamber may include a carrier gas such as helium, argon, nitrogen, and/or other inactive gases.
In an exemplary embodiment, a sample initiation layer 26 is in-situ formed with the overlying low-k dielectric layer, and is formed at a wafer temperature of about 260° C., a chamber pressure of about 4 torr, and a RF power of about 300 W. The precursor only includes mDEOS (with no oxygen added). Helium is used as the carrier gas, and mDEOS to helium have a flow rate ratio of about 0.04. The resulting sample initiation layer has a refractive index of about 1.74 and an extinction coefficient of about 0.11 for a UV light with a wavelength of about 248 nm. The same sample initiation layer has a refractive index of about 1.85 and an extinction coefficient of about 0.20 for a UV light with a wavelength of about 193 nm.
It is known in the art that the extinction coefficient and refractive index are a function of the wavelength of the UV light, and with different UV lights having different wavelengths, the measured extinction coefficient and refractive index are different. Therefore, the preferred embodiment includes the steps of pre-determining the wavelength of the UV light and determining optimum process conditions for forming an ESL with a high extinction coefficient and refractive index.
An UV curing, which may be performed in a production tool that is also used for PECVD, atomic layer deposition (ALD), LPCVD, etc., is then performed. In an exemplary UV curing process, an ultraviolet radiator tool is used. The UV light preferably has a wavelength of between about 200 nm and about 300 nm, although UV lights with smaller or greater wavelengths may be used. As the extinction coefficient is a function of the wavelength of UV lights, after the formation of initiation layer 26, the extinction coefficient of initiation layer 26 to different UV lights is preferably measured, and a wavelength of the UV light is selected so that the corresponding extinction coefficient is high. The UV curing serves the functions of driving porogen out of low-k dielectric layer 28 and improving its mechanical property. Pores will then be generated in low-k dielectric layer 28 and its dielectric constant (k value) is reduced.
During the UV curing process, the UV light penetrates low-k dielectric layer 28. Initiation layer 26, with a high extinction coefficient and a high refractive index, attenuates a greater percentage of UV light from reaching the underlying ESL 24, thus acting as a UV blocker layer. As a result, the stress modulation (stress change to the tensile side) occurring in the ESL 24 is reduced.
It should be appreciated that the concepts of the preferred embodiments of the present invention can also be applied to curing methods other than UV curing, such as eBeam curing, laser curing, and the like, if the curing adversely changes the stress of the ESL.
Experiments have been performed to verify the effects of the initiation layer 26. In a first sample device, a conventional initiation layer having an extinction coefficient of 2E-4 and a refractive index of 1.5 is formed on an ESL. In a second sample device, a preferred initiation layer having an extinction coefficient of 0.11 and a refractive index of 1.7 is formed on a similar ESL. In a third sample device, a similar ESL is formed, while there is no overlying initiation layer. The sample devices are then exposed under a UV light having a wavelength of about 248 nm. After a first UV exposure, it was found that in the first sample device, whose initiation layer has a relatively low extinction coefficient and a relatively low refractive index, the stress change is about 19 percent less than the stress change of the ESL layer in the third sample that does not have an initiation layer. In the second sample device, which has a relatively high extinction coefficient and a relatively high refractive index, the stress change is about 34 percent less than the stress change of the ESL layer in the third sample that does not have an initiation layer. This indicates that the initiation layer, particularly an initiation layer with a high extinction coefficient and refractive index, significantly reduces the stress change in the ESL due to UV exposure. If a second UV exposure is performed, the corresponding stress change improvements are about 11 percent for the first sample device and 28 percent for the second sample device.
By using the preferred embodiment of the present invention, the stress change caused by curing is reduced. The ESLs thus do not need to have very high compressive stresses at the time of deposition. As a result, ESL layers will have smaller dielectric constant values. The likelihood of wafer cracking is also reduced.
Although the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, and composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.