Claims
- 1. A method of producing a semiconductor device comprising:
- forming semiconductor region comprising silicon; and
- forming a film comprising silicon oxide over the semiconductor region by generating a plasma in an atmosphere comprising an organic silane having an ethoxy group, oxygen, and a halogen-containing gas comprising carbon,
- wherein the film includes a halogen element and carbon, a concentration of the halogen element in the film is 1.times.10.sup.17 to 5.times.10.sup.20 cm.sup.-3, and a concentration of the carbon in the film is 5.times.10.sup.19 cm.sup.-3 or less.
- 2. The method of claim 1 wherein the organic silane comprises a material selected from the group consisting of Si(OC.sub.2 H.sub.5).sub.4, Si.sub.2 O(OC.sub.2 H.sub.5).sub.6, Si.sub.3 O.sub.2 (OC.sub.2 H.sub.5).sub.8, Si.sub.4 O.sub.3 (OC.sub.2 H.sub.5).sub.10 and Si.sub.5 O.sub.4 (OC.sub.2 H.sub.5).sub.12.
- 3. The method of claim 1 wherein the halogen-containing gas comprises a material selected from the group consisting of C.sub.2 HCl.sub.3, C.sub.2 H.sub.3 Cl, CH.sub.2 Cl.sub.2 and C.sub.2 F.sub.6.
- 4. The method of claim 1 further comprising the step of treating said film comprising silicon oxide in an oxygen-free atmosphere at 200.degree. to 650.degree. C. after the formation of said film comprising silicon oxide.
- 5. The method of claim 4 wherein said treating step is carried out at a temperature of from 450.degree. to 600.degree. C.
- 6. The method of claim 4 wherein said oxygen-free atmosphere comprises argon or nitrogen.
- 7. The method of claim 1 wherein said halogen-containing gas comprises a halogen-containing hydrocarbon.
- 8. The method of claim 1 wherein said halogen-containing gas comprises a fluorine-containing gas.
- 9. The method of claim 1 wherein the formation of said film comprising silicon oxide is carried out at a temperature of 200.degree. C. or higher.
- 10. The method of claim 1 further comprising the step of irradiating a laser light to said semiconductor region.
- 11. The method of claim 10 wherein said laser light is an excimer laser light.
- 12. The method of claim 10 wherein said irradiating step is carried out at a temperature of 300.degree. to 500.degree. C.
- 13. A method of producing a semiconductor device comprising:
- forming a film comprising silicon oxide by plasma CVD on a substrate provided between and apart from a pair of parallel plate electrodes by introducing a halogen-containing gas comprising carbon, oxygen and an organic silane gas having an ethoxy group between said parallel plate electrodes, and applying an electric energy between said parallel plate electrodes,
- wherein the film includes a halogen element and carbon, a concentration of the halogen element in the film is 1.times.10.sup.17 to 5.times.10.sup.20 cm.sup.-3, and a concentration of the carbon in the film is 5.times.10.sup.19 cm.sup.-3 or less.
- 14. The method of claim 13 wherein the organic silane comprises a material selected from the group consisting of Si(OC.sub.2 H.sub.5).sub.4, Si.sub.2 O(OC.sub.2 H.sub.5).sub.6, Si.sub.3 O.sub.2 (OC.sub.2 H.sub.5).sub.8, Si.sub.4 O.sub.3 (OC.sub.2 H.sub.5).sub.10 and Si.sub.5 O.sub.4 (OC.sub.2 H.sub.5).sub.12.
- 15. The method of claim 13 wherein the halogen-containing gas comprises a material selected from the group consisting of C.sub.2 HCl.sub.3, C.sub.2 H.sub.3 Cl, CH.sub.2 C1.sub.2 and C.sub.2 F.sub.6.
- 16. A method of producing a semiconductor device comprising:
- forming a semiconductor region comprising silicon; and
- forming a film comprising silicon oxide over the semiconductor region by generating a plasma in an atmosphere comprising an organic silane having an ethoxy group, oxygen, and a chlorine-containing gas comprising carbon,
- wherein the film includes a halogen element and carbon, a concentration of the halogen element in the film is 1.times.10.sup.17 to 5.times.10.sup.20 cm .sup.-3, and a concentration of the carbon in the film is 5.times.10.sup.19 cm.sup.-3 or less.
- 17. A method of producing a semiconductor device comprising:
- forming a semiconductor region comprising silicon; and
- forming a film comprising silicon oxide over the semiconductor region by generating a plasma in an atmosphere comprising an organic silane having an ethoxy group, oxygen, and a fluorine-containing gas comprising carbon,
- wherein the film includes a halogen element and carbon, a concentration of the halogen element in the film is 1.times.10.sup.17 to 5.times.10.sup.20 cm.sup.-3, and a concentration of the carbon in the film is 5.times.10.sup.19 cm.sup.-3 or less.
- 18. A method for producing a semiconductor device comprising:
- forming a semiconductor region comprising silicon; and
- forming a film comprising silicon oxide over the semiconductor region by generating a plasma in an atmosphere comprising oxygen, a halogen-containing gas comprising carbon and a material selected from the group consisting of Si(OC.sub.2 H.sub.5).sub.4, Si.sub.2 O(OC.sub.2 H.sub.5).sub.6, Si.sub.3 O.sub.2 (OC.sub.2 H.sub.5).sub.8, Si.sub.4 O.sub.3 (OC.sub.2 H.sub.5).sub.10 and Si.sub.5 O.sub.4 (OC.sub.2 H.sub.5).sub.12.
- 19. A method for producing a semiconductor device comprising the steps of:
- forming on a surface a film comprising silicon oxide by generating plasma in an atmosphere comprising an organic silane gas having an ethoxy group, an oxidizing gas, and a halogen-containing gas comprising carbon,
- wherein the film includes a halogen element and carbon, a concentration of the halogen element in the film is 1.times.10.sup.17 to 5.times.10.sup.20 cm.sup.-3, and a concentration of the carbon in the film is 5.times.10.sup.19 cm.sup.-3 or less.
- 20. The method of claim 19 wherein the concentration of the carbon is detected by secondary ion mass spectrometry.
- 21. A method for producing a semiconductor device comprising the step of:
- forming on a surface a film comprising silicon oxide by generating plasma in an atmosphere comprising an organic silane gas having an ethoxy group, an oxidizing gas, and a halogen-containing gas,
- wherein the halogen-containing gas comprises C.sub.2 F.sub.6.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-055236 |
Feb 1993 |
JPX |
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Parent Case Info
This application is a Continuation of Ser. No. 08/198,054, filed Feb. 18, 1994, now abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0063020 |
Apr 1986 |
JPX |
0175132 |
Jul 1993 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
198054 |
Feb 1994 |
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