Claims
- 1. An insulating film comprising silicon oxide formed over a glass substrate,
- wherein said insulating film includes halogen at a concentration of 1.times.10.sup.17 to 5.times.10.sup.20 cm.sup.-3 and carbon at a concentration of 5.times.10.sup.19 cm.sup.-3 or less which are detected by secondary ion mass spectroscopy.
- 2. The film according to claim 1, wherein the halogen is fluorine or chlorine.
- 3. The film according to claim 1, wherein said insulating film includes carbon at a concentration of 1.times.10.sup.18 cm.sup.-3 or less which is detected by the secondary ion mass spectroscopy.
- 4. The film according to claim 1, wherein said insulating film is a gate insulating film.
- 5. The film according to claim 1 wherein said insulating film is an insulating film in a thin film transistor.
- 6. The film according to claim 1, wherein said insulating film covers an even surface over the glass substrate.
- 7. A semiconductor device comprising:
- a crystalline semiconductor island formed over a glass substrate; and
- an insulating film including silicon oxide formed to cover the crystalline semiconductor island,
- wherein said insulating film includes halogen at a concentration of 1.times.10.sup.17 to 5.times.10.sup.20 cm.sup.-3 and carbon at a concentration of 5.times.10.sup.19 cm.sup.-3 or less.
- 8. The device according to claim 7, wherein the concentrations of halogen and carbon are detected by secondary ion mass spectroscopy.
- 9. The device according to claim 7, wherein said halogen is fluorine or chlorine.
- 10. The device according to claim 7, wherein said insulating film is formed by plasma chemical vapor deposition using an organic silane.
- 11. A thin film transistor comprising:
- a crystalline semiconductor island formed over a glass substrate;
- a silicon oxide film formed to cover the crystalline semiconductor island; and
- a conductive film including at least one of aluminum, titanium, and titanium nitride, said conductive film being formed on the silicon oxide film,
- wherein the silicon oxide film includes halogen at a concentration of 1.times.10.sup.17 to 5.times.10.sup.20 cm.sup.-3 and carbon at a concentration of 5.times.10.sup.19 cm.sup.-3 or less.
- 12. The transistor according to claim 11, wherein said halogen is fluorine or chlorine.
- 13. The transistor according to claim 11, wherein said silicon oxide film is formed by plasma chemical vapor deposition using an organic silane.
- 14. A thin film transistor comprising:
- a crystalline semiconductor island formed over a glass substrate;
- a gate insulating film including silicon oxide formed on the crystalline semiconductor island; and
- a gate electrode formed on the insulating film,
- wherein said gate insulating film includes halogen at a concentration of 1.times.10.sup.17 to 5.times.10.sup.20 cm.sup.-3 and carbon at a concentration of 5.times.10.sup.19 cm.sup.-3 or less.
- 15. The transistor according to claim 14, wherein said halogen is fluorine or chlorine.
- 16. The transistor according to claim 14, wherein said gate insulating film is formed by plasma chemical vapor deposition using an organic silane.
Priority Claims (1)
Number |
Date |
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Kind |
5-55236 |
Feb 1993 |
JPX |
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Parent Case Info
This application is a divisional application of U.S. Ser. No. 08/734,127 filed Oct. 21, 1996, now U.S. Pat. No. 5,866,932, which is a continuation of 08/455,574 filed May 31, 1995, now abandoned, which is a divisional of Ser. No. 08/198,054 filed Feb. 18, 1994 now abandoned.
US Referenced Citations (8)
Foreign Referenced Citations (2)
Number |
Date |
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61-63020 |
Apr 1986 |
JPX |
5-175132 |
Jul 1993 |
JPX |
Divisions (2)
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Number |
Date |
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Parent |
734127 |
Oct 1996 |
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Parent |
198054 |
Feb 1994 |
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Continuations (1)
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Date |
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Parent |
455574 |
May 1995 |
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