Claims
- 1. An integrated circuit structure comprising:
- a substrate including a doped silicon region having argon implanted therein;
- a transition metal disposed over and in contact with said doped silicon region so as to form a boundary therewith, said transition metal having had said argon implanted therethrough so that said boundary is disrupted; and
- a conductive metal disposed over and contacting said transition metal, said conductive metal being more conductive than said transition metal.
- 2. A CMOS structure comprising:
- a substrate including a positively doped active region and a negatively doped active region;
- a tungsten-bearing barrier metal layer in contact with both of said active regions so as to define respective boundaries therewith;
- an aluminum-bearing conductor layer over and in contact with said barrier metal layer; and
- a nonmetallic atomic species implanted entirely through said barrier metal layer so that
- some of said atomic species ends up in both of said active regions,
- some of said atomic species ends up in said barrier metal layer, but not in said conductor layer, and
- said boundaries are disrupted.
- 3. A CMOS structure as recited in claim 2 wherein said atomic species is argon.
- 4. A CMOS structure as recited in claim 2 wherein said atomic species is silicon.
- 5. A CMOS structure as recited in claim 2 wherein said barrier metal electrically connects said positively doped active region with said negatively doped active region.
- 6. A CMOS structure as recited in claim 2 wherein said aluminum bearing conductor layer is in contact with said barrier metal layer.
Parent Case Info
This is a continuing application of U.S. patent application Ser. No. 08/219,231, filed Mar. 29, 1994, which is a continuing application of U.S. patent application Ser. No. 08/811,403, filed Dec. 20, 1991, both now abandoned.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4818712 |
Tully |
Apr 1989 |
|
4853760 |
Abe et al. |
Nov 1991 |
|
5065220 |
Paterson et al. |
Nov 1991 |
|
Foreign Referenced Citations (3)
Number |
Date |
Country |
278001A1 |
Apr 1990 |
DEX |
60138916 |
Nov 1985 |
JPX |
2026052 |
Jan 1990 |
JPX |
Non-Patent Literature Citations (1)
Entry |
"Treatmennt of WTi Contacts on Silicon with Low Energy Argon Ions" (Milosavljevic et al), v. 164, 1988 Thin Solid Films. |
Continuations (2)
|
Number |
Date |
Country |
Parent |
219231 |
Mar 1994 |
|
Parent |
811403 |
Dec 1991 |
|