Claims
- 1. A method of processing multiple substrates within a single chamber, said method comprising:flowing a first gas supply over a second substrate at a first station within said chamber; and flowing a second gas supply over a first substrate at a second station within said chamber; providing a separation between said first gas supply and said second gas supply by flowing said first gas supply over said second substrate and into a first annular gap around said second substrate and out an exhaust port, and by flowing said second gas supply over said first substrate into a second annular gap around said first substrate and out said exhaust port.
- 2. The method of claim 1 wherein said first substrate is loaded into said chamber at said first station and moved to said second station prior to said second substrate being loaded into said chamber at said first station.
- 3. The method of claim 1 further comprising:moving said second substrate and said first substrate, whereby said second substrate is positioned at said second station; and flowing said second gas supply over said second substrate at said second station.
- 4. The method of claim 3, further comprising:waiting for said first gas supply and said second gas supply to drain out of said chamber prior to moving said second substrate and said first substrate.
- 5. The method of claim 3 wherein moving said second substrate and said first substrate positions said first substrate at a third station within said chamber, said method further comprising:flowing a third gas supply over said first substrate at said third station; and providing a separation between said third gas supply and said first gas supply and said second gas supply by flowing said third gas supply over said first substrate and into a third annular gap around said first substrate and out said exhaust port.
- 6. The method of claim 3 further comprising:loading a third substrate into said chamber at said first station after moving said second substrate and said first substrate; heating said third substrate; flowing said first gas supply over said third substrate at said first station; and providing a separation between said first gas supply and said second gas supply by flowing said first gas supply over said third substrate and into said first annular gap around said third substrate and out said exhaust port, and by flowing said second gas supply over said second substrate into said second annular gap around said second substrate and out said exhaust port.
- 7. The method of claim 6, wherein said flow of a first gas supply at said first station is at least one of silane initiation, tungsten hexafluoride-silane nucleation and hydrogen reduction of tungsten hexafluoride.
- 8. The method of claim 6, wherein said flow of a second gas supply at said second station is at least one of silane initiation, tungsten hexafluoride-silane nucleation and hydrogen reduction of tungsten hexafluoride.
- 9. The method of claim 6, wherein said flow of a third gas supply at said third station is at least one of silane initiation, tungsten hexafluoride-silane nucleation and hydrogen reduction of tungsten hexafluoride.
- 10. The method of claim 6, said processing is tungsten deposition processing, and wherein said flow of a first gas supply at said first station is at least silane initiation, said flow of a second gas supply at said second station is at least a tungsten hexafluoride-silane nucleation, and said flow of a third gas supply at least said third station is a hydrogen reduction of tungsten hexafluoride.
- 11. The method of claim 10, further comprising a flow of said first gas supply at said second station as a continued silane initiation prior to flowing said second gas supply for tungsten hexafluoride-silane nucleation.
- 12. The method of claim 1, further comprising:flowing a purging gas supply between said first station and said second station; providing a separation between said first gas supply and said second gas supply by flowing said purging gas supply into said first annular gap and said second annular gap and out said exhaust port, said purging gas supply impedes said first gas supply and said second gas supply from combining.
- 13. The method of claim 12, wherein said first gas supply comprises a silane gas, said second gas supply comprises a tungsten hexafluoride gas, and said purging gas supply comprises an argon gas.
Parent Case Info
This application is a divisional of application No. 09/168,624filed Oct. 8, 1998, now U.S. Pat. No. 6,143,082, issued Nov. 7, 2000, intitled “Isolation Of Incompatible Processes In A Multi-Station Processing Chamber”.
US Referenced Citations (7)
Non-Patent Literature Citations (1)
Entry |
E.J. McInerney, “Study of station flow dynamics in a sequential multiwafer chemical vapor deposition batch reactor using reactor modeling”, J. Vac. Sci. Technol. A 14(3), May/Jun. 1996, 1996 American Vacuum Society, pp. 1152-1155. |