Claims
- 1. A laser repair operation comprising:providing a silicon wafer having a plurality of chips therein, wherein each chip has a plurality of bonding pads, a plurality of testing pads, a plurality of fuses and a passivation layer over the chip with the passivation layer having a plurality of openings exposing the bonding pads and the testing pads; conducting a bump-forming process such that a first bottom metallic lever and a bump are sequentially formed over each bonding pad and a second bottom metallic layer is formed over each testing pad; forming a metallic layer over the wafer; patterning the locations of the first bottom metallic layer and the second bottom metallic layer and removing a portion of the metallic layer outside the patterned region to form the first bottom metallic layer and the second bottom metallic layer; forming a pattern of the bump locations and printing solder material onto the bump locations; conducting a reflow operation to form the bump; performing a testing operation by probing the second bottom metallic layer; and conducting a laser repair.
- 2. The laser repair operation of claim 1, wherein the metallic layer includes a titanium/copper alloyed composite layer.
- 3. The laser repair operation of claim 1, wherein the metallic layer includes an aluminum/nickel/vanadium/copper alloyed composite layer.
Parent Case Info
This application is a divisional of Ser. No. 09/923,665 filed Aug. 6, 2001 now U.S. Pat. No. 6,667,195.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
6395622 |
Liu et al. |
May 2002 |
B1 |
6539531 |
Miller et al. |
Mar 2003 |
B2 |