Claims
- 1. The method of lattice grading GaAsSb to GaAs by liquid phase epitaxy comprising the steps of
- forming a melt of Al, Ga, As, and Sb, the proportion of Sb to Ga being in the range greater than 0 to 4, the melt saturated with GaAs and the proportion of Al being in the range from 1 to 5.times.10.sup.-3 atomic percent,
- heating said melt to the temperature of at least 830.degree. C.,
- contacting said GaAs with said melt,
- cooling the melt at a desired rate to a temperature lower than 770.degree. C.
- 2. The method of claim 1 wherein the step of cooling includes carrying out said cooling at a rate of less than approximately 0.5 C per minute.
- 3. The method of claim 2 wherein the step of cooling includes maintaining said rate for a desired temperature range and maintaining the melt at the lower temperature of said temperature range for a length of time sufficient for the distribution of dislocation defects over the surface of said layer.
Parent Case Info
This is a division of application Ser. No. 945,653 filed Sept. 25, 1978 now U.S. Pat. No. 4,195,305.
Government Interests
The government of the United States of America has rights in this invention pursuant to Department of Energy Contract EY-76-C-03-1250.
US Referenced Citations (5)
Non-Patent Literature Citations (2)
Entry |
Antypas et al., J. Electrochem. Soc., vol. 120, No. 11, Nov. 1973, pp.1574-1577. |
Panish et al., Metallurgical Transactions, vol. 2, March 1971, pp. 795-801. |
Divisions (1)
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Number |
Date |
Country |
Parent |
945653 |
Sep 1978 |
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