The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
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When the FPC board bonded to bonding pads of an integrated circuit device, for example, a driver. The signal path from the power supply to the connected IC device is through the second metal line (M2) 232, instead of the first metal line 222. If the width of the second metal line (M2) 232 is restricted to a limited value for scaling-down design, it will causes some problem in the driving ability. To avoid such problem, a new architecture to improve the driving ability of the line structure from the FPC board to the bonded IC device is proposed in the invention.
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In
The line structure portion 300B includes a line structure which is the patterned second metal layer (M2) 332 coupled to power supply for providing power. The first metal layer 322 and the second metal layer 332 are arranged to be electrically coupled to each other and laid out to be parallel to each other throughout the signal path from the FPC board 300 to the bonded integrated circuit devices. That is, in the region other than the pad structure region 312, the first metal layer 322 and the second metal layer 332 are electrically coupled to each other through a plurality of contact holes filled with the same materials as the second metal layer 332. The process is as follows. A first metal layer 322 is formed on the gate insulation (GI) layer 310. Then, an ILD layer 320 is formed on the first metal layer 322. Then, the ILD layer 320 is patterned, for example, by a photolithography process with a mask to form contact holes 40 to expose portions of the first metal layer 322. Then, a second metal layer 332 is formed on the ILD layer 320 and is also filled in the contact holes 40. That is, no further materials are required to fill in the contact holes 40.
It is assumed that the resistance of the first metal layer 322 is R1 and the resistance of the second metal layer 332 is R2. From theoretical point of view, if the signal path from the FPC board 300 to the bonded integrated circuit devices is only through the second metal layer 332, the resistance R of the signal path is R2. However, if the if the signal path from the FPC board 300 to the bonded integrated circuit devices is through the first metal layer 322 and the second metal layer 332, the resistance R of the signal path is R=(R1*R2)/R1+R2. The resistance R of the signal path must be lower than R2. If the resistance of the signal path is significantly reduced, the driving ability of the signal path from the FPC board 300 to the bonded integrated circuit device is also significantly improved and increased.
It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.