Patent Application
20240360549
Embodiments of the present disclosure generally relate to electronic device fabrication. Particularly, embodiments of the present disclosure relate to low-temperature deposition processes to form molybdenum (Mo)-based materials with improved resistivity.
An electronic device manufacturing apparatus can include multiple chambers, such as process chambers and load lock chambers. Such an electronic device manufacturing apparatus can employ a robot apparatus in transfer chamber that is configured to transport substrates between the multiple chambers. In some instances, multiple substrates are transferred together. Process chambers may be used in an electronic device manufacturing apparatus to perform one or more processes on substrates, such as deposition processes and etch processes. For many processes gasses are flowed into the process chamber.
In accordance with an embodiment, a method is provided. The method includes performing a reactant step of a deposition cycle of a deposition process to form a molybdenum (Mo)-based material, performing a Mo precursor step of the deposition cycle, and performing a treatment step of the deposition cycle. Performing the reactant step includes introducing a reactant, performing the Mo precursor step includes introducing a Mo precursor, and performing the treatment step includes introducing a treatment gas. The deposition process is performed at a temperature that is less than or equal to about 450° C.
In accordance with an embodiment, a device is provided. The system includes a trench and a liner including a Mo-based material formed along the trench. The Mo-based material has a resistivity less than or equal to about 200 microohm-centimeters (μΩ·cm).
The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like references indicate similar elements. It should be noted that different references to “an” or “one” embodiment in this disclosure are not necessarily to the same embodiment, and such references mean at least one.
Embodiments described herein relate to low-temperature deposition processes to form molybdenum (Mo)-based materials with improved resistivity. As semiconductor technology nodes continue to shrink in size (e.g., less than or equal to about 3 nanometer (nm) nodes), electronic performance of conductive material becomes even more important for advanced chip performance. To further improve conductivity, the resistivity contribution of liners can be considered. Some liners are formed from materials that have relatively high resistance, such as tungsten-based liners. Examples of tungsten-based liners include tungsten nitride.
Molybdenum (Mo)-based materials can exhibit lower resistivity as compared to other materials, such as tungsten nitride. However, Mo has a strong bonding energy with elements such as carbon (C), nitrogen (N) and oxygen (O). Therefore, it can be difficult to achieve suitable deposition of Mo-based materials from organometallic precursors. One example of a Mo-based material is molybdenum nitride (MoN). Some processes for depositing MoN materials include employing (Mo(NR)2(NR2))2 precursors that result in higher resistivity films, which can be less desirable for more advanced technology nodes. For example, a MoN material deposited using such a precursor can be formed to have a thickness of about 10 nm and a corresponding resistivity that is greater than about 1000 microohm-centimeters (μΩ·cm). Additionally, some Mo-based material deposition processes can employ Mo-based halides that can damage underlying conductive layers (e.g., metal layers) and can be performed at high temperatures (e.g., greater than about 400° C.) that further deter implementation of Mo-based liners with respect to advanced technology nodes.
To address these and other drawbacks, embodiments described herein provide for low-temperature deposition processes to form Mo-based materials with improved resistivity. For example, a Mo-based material can be formed on a dielectric material. In some embodiments, the dielectric material includes silicon dioxide (SiO2) (i.e., silica). Additionally or alternatively, a Mo-based material can be formed on a conductive material, such a metal or a titanium nitride (TiN) liner. In some embodiments, a Mo-based material includes molybdenum nitride (MoN). In some embodiments, a Mo-based material is formed having a thickness of less than or equal to about 10 nm. In some embodiments, the Mo-based material has a resistivity of less than or equal to about 200 μΩ·cm. In some embodiments, the resistivity of the Mo-based material ranges from about 50 μΩ·cm to about 200 μΩ·cm. Accordingly, a Mo-based material formed in accordance with embodiments described herein can have lower resistivity as compared to, e.g., tungsten nitride.
The deposition process can conformally deposit the Mo-based material on a surface. In some embodiments, the deposition process is a chemical vapor deposition (CVD) process. In some embodiments, the deposition process is an atomic layer deposition (ALD) process.
A deposition process described herein can include a number of deposition cycles. Each deposition cycle includes a reactant step to introduce a reactant, a Mo precursor step to introduce a Mo precursor, and a treatment step to introduce a treatment gas. A first purge step can be performed between the reactant step and the Mo precursor step, a second purge step can be performed between the Mo precursor step and the treatment step, and a third purge step can be performed after the treatment step. More specifically, each purge step can introduce a purge gas and has an associated purge time. A longer purge time for at least the first purge step can improve conformal deposition uniformity of the Mo-based material. The purge gas can include any suitable inert or non-reactive gas (e.g., noble gas). For example, the purge gas can include a noble gas (e.g., argon (Ar)), nitrogen gas (N2), etc. In some embodiments, each purge step has a purge gas pulse time between about 0.5 second(s) to about 50 s. In some embodiments, each purge step has a purge gas pulse time between about 1 s to about 10 s.
In some embodiments, the number of deposition cycles ranges from about 1 cycle to about 200 cycles. In some embodiments, the number of deposition cycles ranges from about 5 cycles to about 150 cycles. In some embodiments, the number of deposition cycles ranges from about 10 cycles to about 100 cycles. In some embodiments, the deposition process is performed at a temperature that is less than or equal to about 450° C. In some embodiments, the deposition process is performed at a temperature that ranges from about 200° C. to about 450° C. In some embodiments, the deposition process is performed at a temperature that ranges from about 250° C. to about 400° C. In some embodiments, the deposition process is performed at a temperature that ranges from about 300° C. to about 375° C. In some embodiments, the deposition process is performed at a pressure that ranges from about 0.5 torr to about 300 torr. In some embodiments, the deposition process is performed at a pressure that ranges from about 2 torr to about 100 torr. In some embodiments, the deposition process is performed at a pressure that ranges from about 2 torr to about 50 torr.
More specifically, during the reactant step, a reactant is introduced to break Mo—C bonds of ligands for depositing the Mo-based material without an ex-situ reduction source (e.g., ex-situ hydrogen source), and with little to no damage to the underneath conductive layer (e.g., metal layer). The reactant step can have an associated reactant pulse time. In some embodiments, the reactant pulse time ranges from about 0.1 s to about 5 s. In some embodiments, the reactant pulse time ranges from about 0.2 s to about 1 s.
A reactant can be represented by the formula RXy, where X is a halogen (e.g., chlorine (CI), bromine (Br) or iodine (I)) and y=1 or y=2. For example, if y=1, then R can be an alkyl group having a chemical formula of CnH2n+1 where 1≤n≤10. Thus, in some embodiments, the reactant includes an alkyl halide (i.e., haloalkane or halogenoalkane). Generally, an alkyl halide is an alkane that includes a halogen substituent. For example, an alkyl halide can be formed from an alkane having a chemical formula CnH2n+2 via halogenation (e.g., chlorination, bromination or iodination). Examples of alkyl halides include methyl halides, ethyl halides, etc.
As another example, if y=2, then R can be an alkylene group having a chemical formula of CnH2n where 1≤n≤10. Thus, in some embodiments, the reactant includes an alkylene dihalide (i.e., haloalkene or halogenoalkene). Generally, an alkylene dihalide is an alkene that includes at a halogen substituent. For example, an alkylene dihalide can be formed from an alkene having a chemical formula CnH2n via halogenation. Examples of alkylene dihalides include methylene dihalides, ethylene dihalides, etc.
Illustratively, if the reactant includes an alkyl halide, beta-hydride elimination can provide an in-situ reduction source to transfer hydrogen from the alkyl group or the alkylene group to Mo. This can enable Mo reduction and the ability of the alkyl group to leave the Mo surface as an alkene. In some embodiments, the reactant is an iodine-containing reactant. For example, the reactant can include an alkyl iodide or an alkylene diiodide. The general mechanism of an iodine-containing reactant is that it can decompose on a metal surface to generate a metal iodide. The iodine induces the breaking of Mo—C bonds to form Mo—I with the ligand removed from the Mo atom.
During the Mo precursor step, a Mo precursor is introduced. The Mo precursor step can have an associated Mo precursor pulse time. In some embodiments, the Mo precursor pulse time ranges from about 0.2 s to about 5 s. In some embodiments, the Mo precursor pulse time ranges from about 1 s to about 4 s. In some embodiments, the Mo precursor includes an Mo-based amide. Examples of Mo precursors include Mo(imido)2(amino)2, Mo(amino)4, bis(benzene)molybdenum, bis(ethylbenzene)molybdenum, bis(trimethylsilyl)benzene-molybdenum, bis(propyl)benzene-molybdenum, bis(isopropyl)benzene-molybdenum, an alkyl substituted benzene, etc. The alkyl on benzene can be 0-5 carbon. The alkyl on benzene can be mono, di, or tri substituted benzene.
During the treatment step, a treatment gas is introduced to improve the quality of the Mo-based material. For example, the treatment gas can increase adhesion of the Mo-based material to the dielectric material (e.g., SiO2 and/or silicon nitride). As another example, the treatment gas can improve the smoothness of the Mo-based material. For example, the smoothness of the Mo-based material can be about 0.2 nm at a thickness of about 20 nm. The treatment step can have an associated treatment gas pulse time. In some embodiments, the treatment gas pulse time ranges from about 1 s to about 150 s. In some embodiments, the treatment gas pulse time ranges from about 50 s to about 150 s. The treatment gas can include any suitable gas. In some embodiments, the treatment gas includes ammonia gas (NH3). In some embodiments, the flow rate for the treatment gas ranges from about 10 standard cubic centimeters per minute (sccm) to about 5000 sccm. In some embodiments, the flow rate for the treatment gas ranges from about 250 sccm to about 2000 sccm. In some embodiments, the flow rate for the treatment gas ranges from about 400 sccm to about 1000 sccm.
In some embodiments, a deposition process described herein is used to form liners during the fabrication of electronic devices. For example, at least one via opening can be formed within an interlevel dielectric (ILD) layer disposed on a substrate, resulting in ILD layer portions separated by the via opening. An Mo-based material can be conformally deposited as a liner along exposed surfaces of the ILD layer portions, including sidewalls of the via opening. Then, a conductive material (e.g., metal) can be formed on the liner within the via opening. Additionally or alternatively, the Mo-based material can be deposited on conductive liners (e.g., metal liners) during integration for logic or memory. Further details regarding forming Mo-based materials with improved resistivity will now be described below with reference to
A deposition process described herein can include a number of deposition cycles. Each deposition cycle includes a reactant step to introduce a reactant, a Mo precursor step to introduce a Mo precursor, and a treatment step to introduce a treatment gas. A first purge step can be performed between the reactant step and the Mo precursor step, a second purge step can be performed between the Mo precursor step and the treatment step, and a third purge step can be performed after the treatment step. More specifically, each purge step can introduce a purge gas and has an associated purge time. A longer purge time for at least the first purge step can improve conformal deposition uniformity of the Mo-based material. The purge gas can include any suitable inert or non-reactive gas (e.g., noble gas). For example, the purge gas can include a noble gas (e.g., Ar), N2, etc. In some embodiments, each purge step has a purge gas pulse time between about 0.5 s to about 50 s. In some embodiments, each purge step has a purge gas pulse time between about 1 s to about 10 s.
In some embodiments, the number of deposition cycles ranges from about 1 cycle to about 200 cycles. In some embodiments, the number of deposition cycles ranges from about 5 cycles to about 150 cycles. In some embodiments, the number of deposition cycles ranges from about 10 cycles to about 100 cycles. In some embodiments, the deposition process is performed at a temperature that is less than or equal to about 450° C. In some embodiments, the deposition process is performed at a temperature that ranges from about 200° C. to about 450° C. In some embodiments, the deposition process is performed at a temperature that ranges from about 250° C. to about 400° C. In some embodiments, the deposition process is performed at a temperature that ranges from about 300° C. to about 375° C. In some embodiments, the deposition process is performed at a pressure that ranges from about 0.5 torr to about 300 torr. In some embodiments, the deposition process is performed at a pressure that ranges from about 2 torr to about 100 torr. In some embodiments, the deposition process is performed at a pressure that ranges from about 2 torr to about 50 torr.
More specifically, during the reactant step, a reactant is introduced to break Mo—C bonds of ligands for depositing the Mo-based material without an ex-situ reduction source (e.g., ex-situ hydrogen source), and with little to no damage to the underneath conductive layer (e.g., metal layer). The reactant step can have an associated reactant pulse time. In some embodiments, the reactant pulse time ranges from about 0.1 s to about 5 s. In some embodiments, the reactant pulse time ranges from about 0.2 s to about 1 s.
A reactant can be represented by the formula RXy, where X is a halogen (e.g., chlorine (Cl), bromine (Br) or iodine (I)) and y=1 or y=2. For example, if y=1, then R can be an alkyl group having a chemical formula of CnH2n+1 where 1≤n≤10. Thus, in some embodiments, the reactant includes an alkyl halide (i.e., haloalkane or halogenoalkane). Generally, an alkyl halide is an alkane that includes a halogen substituent. For example, an alkyl halide can be formed from an alkane having a chemical formula CnH2n+2 via halogenation (e.g., chlorination, bromination or iodination). Examples of alkyl halides include methyl halides, ethyl halides, etc.
As another example, if y=2, then R can be an alkylene group having a chemical formula of CnH2n where 1≤n≤10. Thus, in some embodiments, the reactant includes an alkylene dihalide (i.e., haloalkene or halogenoalkene). Generally, an alkylene dihalide is an alkene that includes at a halogen substituent. For example, an alkylene dihalide can be formed from an alkene having a chemical formula CnH2n via halogenation. Examples of alkylene dihalides include methylene dihalides, ethylene dihalides, tris-halides, etc.
Illustratively, if the reactant includes an alkyl halide, beta-hydride elimination can provide an in-situ reduction source to transfer hydrogen from the alkyl group to Mo. This can enable Mo reduction and the ability of the alkyl group to leave the Mo surface as an alkene.
In some embodiments, the reactant is an iodine-containing reactant. For example, the reactant can include an alkyl iodide or an alkylene diiodide. The general mechanism of an iodine-containing reactant is that it can decompose on a metal surface to generate a metal iodide. The iodine induces the breaking of Mo—C bonds to form Mo—I with the ligand removed from the Mo atom.
During the Mo precursor step, a Mo precursor is introduced. The Mo precursor step can have an associated Mo precursor pulse time. In some embodiments, the Mo precursor pulse time ranges from about 0.2 s to about 5 s. In some embodiments, the Mo precursor pulse time ranges from about 1 s to about 4 s. In some embodiments, the Mo precursor includes an Mo-based amide. Examples of Mo precursors include Mo(imido)2(amino)2, Mo(amino)4, bis(benzene)molybdenum, bis(ethylbenzene)molybdenum, bis(trimethylsilyl)benzene-molybdenum, bis(propyl)benzene-molybdenum, bis(isopropyl)benzene-molybdenum, an alkyl substituted benzene, etc. The alkyl on benzene can be 0-5 carbon. The alkyl on benzene can be mono, di, or tri substituted benzene.
During the treatment step, a treatment gas is introduced to improve the quality of the Mo-based material. For example, the treatment gas can increase adhesion of the Mo-based material to the dielectric material (e.g., SiO2 and/or silicon nitride). As another example, the treatment gas can improve the smoothness of the Mo-based material. For example, the smoothness of the Mo-based material can be about 0.2 nm at a thickness of about 20 nm. The treatment step can have an associated treatment gas pulse time. In some embodiments, the treatment gas pulse time ranges from about 1 s to about 150 s. In some embodiments, the treatment gas pulse time ranges from about 50 s to about 150 s. The treatment gas can include any suitable gas. In some embodiments, the treatment gas includes ammonia gas (NH3). In some embodiments, the flow rate for the treatment gas ranges from about 10 sccm to about 5000 sccm. In some embodiments, the flow rate for the treatment gas ranges from about 250 sccm to about 2000 sccm. In some embodiments, the flow rate for the treatment gas ranges from about 400 sccm to about 1000 sccm.
At step 210, a base structure of an electronic device is obtained. In some embodiments, the base structure includes a substrate, an ILD layer disposed on the substrate, and at least one via opening through the ILD layer. The substrate can include at least a substrate layer (e.g., Si substrate). The substrate can further include one or more additional layers. The ILD layer can include any suitable dielectric material. In some embodiments, the ILD layer includes a silicate. For example, the ILD layer can include SiO2.
In some embodiments, obtaining the base structure includes receiving a preformed base structure. In some embodiments, obtaining the base structure includes forming at least a portion of the base structure. For example, forming at least a portion of the base structure can include at least one of forming the ILD layer on the substrate (e.g., directly on the substrate layer or on the one or more additional layers), or forming the at least one opening through the ILD layer to form at least two ILD layer portions separated by the at least one opening.
Forming the at least one opening can include forming at least one trench within the ILD layer. For example, forming the at least one trench can include performing an etch process. If the base structure does not include a dielectric cap including an etch stop layer formed on the ILD layer, then at least one trench can be equivalent to the least one opening. Alternatively, if the base structure further includes a dielectric cap disposed on the ILD layer, then the formation of the trench using the etch process may stop at the etch stop layer. Thus, forming the at least one opening can further include performing an additional etch process (e.g., anisotropic etch process) to remove the dielectric cap. In some embodiments, the at least one opening is a via opening. In some embodiments, the at least one opening is formed by drilling through the ILD layer.
At step 220, a liner is formed on the base structure to obtain an intermediate structure. Forming the liner can include conformally depositing a liner material along exposed surfaces of the at least two ILD layer portions. For example, the liner material can be conformally deposited along sidewalls of the at least one opening, and upper surfaces of the at least two ILD layer portions. In some embodiments, the liner material includes an Mo-based material. In some embodiments, the liner is formed having a thickness of less than or equal to about 10 nm. In some embodiments, the liner is formed having a thickness of less than or equal to about 3 nm. In some embodiments, the liner has a resistivity of less than or equal to about 200 μΩ·cm. In some embodiments, the resistivity of the liner ranges from about 50 μΩ·cm to about 200 μΩ·cm. Further details regarding forming the liner on the base structure are described above with reference to
At step 230, additional processing is performed on the intermediate structure to obtain a final structure corresponding to the electronic device. Performing the additional processing can include forming conductive material on the liner. For example, forming conductive material on the intermediate structure can include forming a first portion of conductive material within the at least one opening, and forming a second portion of conductive material on the first portion of conductive material and the portions of the liner formed on upper surfaces of the ILD layer portions. In some embodiments, the first portion of conductive material corresponds to at least one via and the second portion of conductive material corresponds to a conductive line. The conductive material can include any suitable material(s) (e.g., metal(s)). Examples of suitable materials that can be used to form the conductive material include Cu, W, Co, Mo, Ru, TiN, TaN, MoNx, etc. Further details regarding steps 210-230 are described above with reference to
At step 310, a reactant step of a deposition cycle of a deposition process is performed. The deposition process can conformally deposit the Mo-based material on a surface. In some embodiments, the surface is a surface of a dielectric material. For example, the dielectric material can be a silicate (e.g., SiO2). In some embodiments, the dielectric material corresponds to an ILD layer. In some embodiments, the deposition process is a CVD process. In some embodiments, the deposition process is an ALD process. In some embodiments, the deposition process is performed at a temperature that ranges from about 200° C. to about 450° C. In some embodiments, the deposition process is performed at a temperature that ranges from about 250° C. to about 400° C. In some embodiments, the deposition process is performed at a temperature that ranges from about 325° C. to about 375° C. In some embodiments, the deposition process is performed at a pressure that ranges from about 0.5 torr to about 300 torr. In some embodiments, the deposition process is performed at a pressure that ranges from about 2 torr to about 100 torr. In some embodiments, the deposition process is performed at a pressure that ranges from about 2 torr to about 50 torr.
Performing the reactant step includes introducing a reactant. The reactant is introduced to break Mo—C bonds of ligands for depositing the Mo-based material without an ex-situ reduction source (e.g., ex-situ hydrogen source), and with little to no damage to the underneath conductive layer (e.g., metal layer). The reactant step can have an associated reactant pulse time. In some embodiments, the reactant pulse time ranges from about 0.1 s to about 5 s. In some embodiments, the reactant pulse time ranges from about 0.2 s to about 1 s. Examples of reactants are described above with reference to
In some embodiments, performing the reactant step further includes performing a first purge step after introducing the reactant. More specifically, the first purge step can introduce a first purge gas. The first purge gas can include any suitable inert or non-reactive gas (e.g., noble gas). For example, the first purge gas can include Ar. In some embodiments, the first purge step has a purge gas pulse time between about 0.5 s to about 50 s. In some embodiments, the first purge step has a purge gas pulse time between about 1 s to about 10 s. A longer purge time for the first purge step can improve conformal deposition uniformity of the Mo-based material.
At step 320, a Mo precursor step of the deposition cycle is performed. Performing the Mo precursor step includes introducing a Mo precursor. The Mo precursor step can have an associated Mo precursor pulse time. In some embodiments, the Mo precursor pulse time ranges from about 0.2 s to about 5 s. In some embodiments, the Mo precursor pulse time ranges from about 1 s to about 4 s. The Mo precursor can include any suitable precursor. In some embodiments, the Mo precursor includes an Mo-based amide. Examples of Mo precursors include Mo(imido)2(amino)2, Mo(amino)4, bis(benzene)molybdenum, bis(ethylbenzene)molybdenum, bis(trimethylsilyl)benzene-molybdenum, bis(propyl)benzene-molybdenum, bis(isopropyl)benzene-molybdenum, etc.
In some embodiments, performing the Mo precursor step further includes performing a second purge step after introducing the Mo precursor. More specifically, the second purge step can introduce a second purge gas. The second purge gas can include any suitable inert or non-reactive gas (e.g., noble gas). For example, the second purge gas can include Ar. In some embodiments, the second purge step has a purge gas pulse time between about 0.5 s to about 50 s. In some embodiments, the second purge step has a purge gas pulse time between about 1 s to about 10 s.
At step 330, a treatment step of the deposition cycle is performed. Performing the treatment step includes introducing a treatment gas. The treatment step can be performed to improve the quality of the Mo-based material. For example, the treatment gas can increase adhesion of the Mo-based material to the dielectric material (e.g., SiO2 and/or silicon nitride). As another example, the treatment gas can improve the smoothness of the Mo-based material. For example, the smoothness of the Mo-based material can be about 0.2 nm at a thickness of about 20 nm. The treatment step can have an associated treatment gas pulse time. In some embodiments, the treatment gas pulse time ranges from about 1 s to about 150 s. In some embodiments, the treatment gas pulse time ranges from about 50 s to about 150 s. The treatment gas can include any suitable gas. In some embodiments, the treatment gas includes NH3. In some embodiments, the flow rate for the treatment gas ranges from about 10 sccm to about 5000 sccm. In some embodiments, the flow rate for the treatment gas ranges from about 250 sccm to about 2000 sccm. In some embodiments, the flow rate for the treatment gas ranges from about 400 sccm to about 1000 sccm.
In some embodiments, performing the treatment step further includes performing a third purge step after introducing the Mo precursor. More specifically, the third purge step can introduce a third purge gas. The third purge gas can include any suitable inert or non-reactive gas (e.g., noble gas). For example, the third purge gas can include Ar. In some embodiments, the third purge step has a purge gas pulse time between about 0.5 s to about 50 s. In some embodiments, the third purge step has a purge gas pulse time between about 1 s to about 10 s.
At step 340, it is determined whether the deposition process is complete. For example, determining whether the deposition process is complete can include determining whether the deposition cycle is a final deposition cycle of the deposition process. If the deposition process is not complete, then the process can revert back to step 310 to initiate another deposition cycle and perform the reactant step. Otherwise, if the deposition process is complete, then the deposition process to form the Mo-based material is complete (e.g., Mo-based liner).
The deposition process can have any suitable number of cycles. In some embodiments, the number of cycles ranges from about 1 cycle to about 200 cycles. In some embodiments, the number of cycles ranges from about 5 cycles to about 150 cycles. In some embodiments, the number of cycles ranges from about 10 cycles to about 100 cycles. In some embodiments, the Mo-based material is formed having a thickness of less than or equal to about 10 nm. In some embodiments, the Mo-based material has a resistivity of less than or equal to about 200 μΩ·cm. In some embodiments, the resistivity of the Mo-based material ranges from about 50 μΩ·cm to about 200 μΩ·cm. Further details regarding steps 310-340 are described above with reference to
System 35 can include at least two transfer chambers 48, 50, at least two transfer robots 49, 51, disposed within transfer chambers 48, 50 respectfully, and a plurality of processing chambers 36, 38, 40, 41, 42 and 43. Transfer chamber 48 and transfer chamber 50 can be separated by pass-through chambers 52, which may comprise cool-down or pre-heating chambers. Pass-through chambers 52 can also be pumped down or ventilated during substrate handling when transfer chamber 48 and the transfer chamber 50 operate at different pressures. For example, transfer chamber 48 may operate at a pressure within a range from about 100 milliTorr to about 5 Torr, such as about 400 milliTorr, and transfer chamber 50 may operate at a pressure within a range from about 1×10−5 Torr to about 1×10−8 Torr, such as about 1×10−7 Torr. Processing platform system 35 can be controlled using microprocessor controller 54.
Transfer chamber 48 is coupled with at least two degas chambers 44, at least two load lock chambers 46, preclean chamber 42 and chamber 36, such as a CVD processing chamber or an ALD processing chamber. Substrates can be sequentially degassed and cleaned in degas chambers 44 and the preclean chamber 42, respectively. Transfer robot 49 can move a substrate between degas chambers 44 and preclean chamber 42. The substrate may then be transferred into chamber 36 for deposition of a material thereon.
Transfer chamber 50 is coupled to a cluster of processing chambers 38, 40, 41, and 43. In one example, chambers 38 and 40 can include a CVD chamber and/or an ALD chamber for depositing materials. A CVD chamber can be adapted to deposit materials using CVD techniques or ALD techniques. Chambers 41 and 43 can include a rapid thermal annealing (RTA) chamber and/or a rapid thermal process (RTP) chamber, that can anneal substrates at low or extremely low pressures. Alternatively, chambers 41 and 43 be deposition chambers capable of performing one or more of CVD, ALD, annealing, in situ deposition, etc. A substrate can be moved from transfer chamber 48 into transfer chamber 50 via pass-through chambers 52. Thereafter, transfer robot 51 can move the substrate between one or more of the processing chambers 38, 40, 41, and 43 for material deposition and annealing as needed for processing.
While not shown, a plurality of vacuum pumps is disposed in fluid communication with each transfer chamber and each of the processing chambers to independently regulate pressures in the respective chambers. The pumps may establish a vacuum gradient of increasing pressure across the apparatus from the load lock chamber to the processing chambers. Additionally, one or more etch chambers can be coupled to processing platform system 35 or in a separate processing system for etching the substrate surface. For example, the one or more etch chambers can include a dry etch chamber (e.g., plasma etch chamber) and/or a wet etch chamber.
The preceding description sets forth numerous specific details such as examples of specific systems, components, methods, and so forth, in order to provide a good understanding of several embodiments of the present disclosure. It will be apparent to one skilled in the art, however, that at least some embodiments of the present disclosure may be practiced without these specific details. In other instances, well-known components or methods are not described in detail or are presented in simple block diagram format in order to avoid unnecessarily obscuring the present disclosure. Thus, the specific details set forth are merely exemplary. Particular implementations may vary from these exemplary details and still be contemplated to be within the scope of the present disclosure.
Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrase “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. In addition, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or.” When the term “about” or “approximately” is used herein, this is intended to mean that the nominal value presented is precise within +10%.
Although the operations of the methods herein are shown and described in a particular order, the order of the operations of each method may be altered so that certain operations may be performed in an inverse order or so that certain operations may be performed, at least in part, concurrently with other operations. In another embodiment, instructions or sub-operations of distinct operations may be in an intermittent and/or alternating manner.
It is to be understood that the above description is intended to be illustrative, and not restrictive. Many other embodiments will be apparent to those of skill in the art upon reading and understanding the above description. The scope of the disclosure should, therefore, be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
