BRIEF DESCRIPTION OF THE DRAWINGS
Exemplary embodiments of the present can be understood in more detail from the following description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a cross sectional view of a magnetic tunnel junction (MTJ) of a conventional magnetic random access memory (MRAM);
FIG. 2 is a cross sectional view of a magnetic tunnel junction (MTJ) of an MRAM according to an exemplary embodiment of the present invention;
FIG. 3 is a graph of simulation results showing a magnetoresistance (MR) ratio with respect to the thickness of an MR enhancing layer according to an exemplary embodiment of the present invention;
FIG. 4 is a graph of simulation results showing a switch field with respect to the thickness of the MR enhancing layer according to an exemplary embodiment of the present invention; and
FIG. 5 is a cross sectional view of a spin-torque-transfer-type magnetic memory device.