1. Field of the Invention
The present invention relates to a manufacturing method for Micro-Electro-Mechanical Systems (MEMS) devices such as acceleration sensors and pressure sensors.
2. Description of the Related Art
In a Micro-Electro-Mechanical Systems (MEMS) device fabrication process, a plurality of crossing division lines called streets are formed on the front side of a substantially disk-shaped substrate such as a glass substrate, silicon substrate, and organic substrate to thereby partition a plurality of areas where MEMS devices such as acceleration sensors, pressure sensors, gyroscopes, and tactile sensors are respectively formed. These areas where the MEMS devices are formed are divided from each other along the streets to thereby obtain the individual MEMS devices. As a dividing apparatus for dividing the substrate having the MEMS devices along the streets, a cutting apparatus called a dicing saw is generally used. This cutting apparatus includes a cutting blade having a thickness of about 40 μm for cutting the substrate having the MEMS devices along the streets. However, in cutting the substrate by using this cutting apparatus, a cutting fluid is supplied to a portion of the substrate to be cut by the cutting blade. Accordingly, there is a problem such that the cutting fluid containing chips may penetrate into a movable portion of each MEMS device formed on the substrate, causing a remarkable reduction in quality of each MEMS device.
As a method of dividing a substrate such as a wafer along the streets, a laser processing method using a pulsed laser beam having an absorption wavelength to the substrate has been proposed in recent years. In this laser processing method, the pulsed laser beam is applied to the substrate along the streets to thereby form laser processed grooves along the streets. By applying an external force to the substrate thus having the laser processed grooves, the substrate is broken along the streets where the laser processed grooves are formed (see Japanese Patent Laid-open No. Hei 10-305420, for example).
In the case that a laser beam having an absorption wavelength to the substrate is applied to the substrate having the MEMS devices along the streets as in the wafer dividing method disclosed in Japanese Patent Laid-open No. Hei 10-305420, there is a problem such that debris scattered by the application of the laser beam may be deposited to the surface of each MEMS device and that the quality of each MEMS device may be reduced due to the influence of heat by the laser beam applied to the substrate.
It is therefore an object of the present invention to provide a MEMS device manufacturing method which can manufacture MEMS devices without reducing the quality thereof.
In accordance with an aspect of the present invention, there is provided a MEMS device manufacturing method including a break start point forming step of forming a break start point in a substrate along the areas corresponding to a plurality of crossing streets set on the substrate before forming a plurality of MEMS devices on the substrate; a device forming step of forming the MEMS devices in a plurality of areas partitioned by the areas corresponding to the crossing streets on the front side of the substrate after performing the break start point forming step; and a substrate breaking step of applying an external force to the substrate after performing the device forming step to thereby break the substrate along the areas corresponding to the crossing streets where the break start point is formed, thus dividing the substrate into the individual MEMS devices.
Preferably, the substrate includes a glass substrate. Preferably, the break start point forming step includes the step of applying a laser beam having a transmission wavelength to the substrate along the areas corresponding to the crossing streets in the condition where the focal point of the laser beam is set inside the substrate, thereby forming a plurality of modified layers as the break start point inside the substrate along the areas corresponding to the crossing streets.
According to the present invention, the break start point forming step is performed to form the break start point in the substrate along the areas corresponding to the crossing streets before forming the MEMS devices on the substrate. Accordingly, it is possible to eliminate the problem that the quality of the MEMS devices may be reduced due to the debris scattered or the influence of heat by the application of a laser beam. In the break start point forming step, the break start point is formed in the areas corresponding to the crossing streets set on the substrate before performing the device forming step and the substrate breaking step. Accordingly, in the substrate breaking step, the substrate having the MEMS devices on the front side can be easily divided into the individual MEMS devices by applying an external force to the substrate.
The above and other objects, features and advantages of the present invention and the manner of realizing them will become more apparent, and the invention itself will best be understood from a study of the following description and appended claims with reference to the attached drawings showing some preferred embodiments of the invention.
A preferred embodiment of the MEMS device manufacturing method according to the present invention will now be described in detail with reference to the attached drawings.
This break start point forming step is performed by using a laser processing apparatus 3 shown in
The laser beam applying means 32 includes a cylindrical casing 321 extending in a substantially horizontal direction. Although not shown, the casing 321 contains pulsed laser beam oscillating means including a pulsed laser beam oscillator and repetition frequency setting means. The laser beam applying means 32 further includes focusing means 322 mounted on the front end of the casing 321 for focusing the pulsed laser beam oscillated from the pulsed laser beam oscillating means. Although not shown, the laser beam applying means 32 is provided with focal position adjusting means for adjusting the focal position of the pulsed laser beam to be focused by the focusing means 322.
The imaging means 33 is mounted on the front end portion of the casing 321 of the laser beam applying means 32. The imaging means 33 includes illuminating means for illuminating the substrate 2, an optical system for capturing an area illuminated by the illuminating means, and an imaging device (CCD) for imaging the area captured by the optical system. An image signal output from the imaging means 33 is transmitted to control means (not shown). In a memory of the control means, a plurality of coordinate values (set values) for the crossing streets set on the front side of the substrate 2 shown in
In performing the break start point forming step by using the laser processing apparatus 3 performs to process the break start point along the areas corresponding to the crossing streets set on the substrate 2 before forming a plurality of MEMS device on the substrate 2, the substrate 2 is first placed on the chuck table 31 of the laser processing apparatus 3 shown in
After performing the wafer holding step mentioned above, the chuck table 31 holding the substrate 2 is moved to a position directly below the imaging means 33 by the feeding means. In the condition where the chuck table 31 is positioned directly below the imaging means 33, an alignment operation is performed by the imaging means 33 and the control means to detect whether or not the substrate 2 is positioned at predetermined coordinate values and then position the substrate 2 at the predetermined coordinate values. More specifically, the imaging means 33 images the notch 21 formed on the outer circumference of the substrate 2 and transmits an image signal corresponding to the notch 21 to the control means. The control means then determines whether or not the notch 21 is positioned at the predetermined coordinate values according to the image signal transmitted from the imaging means 33. If the notch 21 is not positioned at the predetermined coordinate values, the control means controls to rotate the chuck table 31 and then position the notch 21 at the predetermined coordinate values (alignment step).
After performing the alignment step mentioned above, the chuck table 31 is moved to a laser beam applying area where the focusing means 322 of the laser beam applying means 32 is located as shown in
Thereafter, a pulsed laser beam having a transmission wavelength to the substrate 2 is applied from the focusing means 322 to the substrate 2, and the chuck table 31 is moved in a feeding direction shown by an arrow X1 in
For example, the modified layer forming step mentioned above is performed under the following processing conditions.
As described above, the modified layer forming step as a preferred embodiment of the break start point forming step is performed along the areas corresponding to all of the crossing streets set on the substrate 2, thereby forming the modified layers 22 along the areas corresponding to all of the crossing streets inside the substrate 2 as shown in
Another preferred embodiment of the break start point forming step will now be described with reference to
After performing the wafer holding step mentioned above, the alignment step mentioned above is performed. Thereafter, the chuck table 31 is moved to the laser beam applying area where the focusing means 322 of the laser beam applying means 32 is located as shown in
For example, the laser processed groove forming step mentioned above is performed under the following processing conditions.
As described above, the laser processed groove forming step as another preferred embodiment of the break start point forming step is performed along the areas corresponding to all of the crossing streets set on the substrate 2, thereby forming the laser processed grooves 23 along the areas corresponding to all of the crossing streets on the back side 2b of the substrate 2 as shown in
After performing the break start point forming step mentioned above, a device forming step is performed to form a plurality of MEMS devices in a plurality of areas partitioned by the crossing street areas on the front side 2a of the substrate 2. For example, this device forming step may be performed by the method disclosed in Japanese Patent Laid-open No. 2005-293918. As described above, the device forming step is performed to form a plurality of MEMS devices 20 in a plurality of areas partitioned by the crossing street areas on the front side 2a of the substrate 2 as shown in
After performing the device forming step mentioned above, a substrate supporting step is performed in such a manner that the substrate 2 having the MEMS devices 20 on the front side 2a is attached to a dicing tape 5 supported to an annular frame 4 as shown in
Thereafter, a substrate breaking step is performed in such a manner that an external force is applied to the substrate 2 supported through the dicing tape 5 to the annular frame 4 to thereby break the substrate 2 along the street areas where the modified layers 22 or the laser processed grooves 23 as the break start point are formed, thus dividing the substrate 2 into the individual MEMS devices 20. This substrate breaking step is performed by using a tape expanding apparatus 6 shown in
The tape expanding means 62 includes an expanding drum 621 provided inside of the annular frame holding member 611. The expanding drum 621 has an outer diameter smaller than the inner diameter of the annular frame 4 and an inner diameter larger than the outer diameter of the substrate 2 attached to the dicing tape 5 supported to the annular frame 4. The expanding drum 621 has a supporting flange 622 at the lower end of the drum 621. The tape expanding means 62 further includes supporting means 623 for vertically movably supporting the annular frame holding member 611. The supporting means 623 is composed of a plurality of air cylinders 623a provided on the supporting flange 622. Each air cylinder 623a is provided with a piston rod 623b connected to the lower surface of the annular frame holding member 611. The supporting means 623 composed of these plural air cylinders 623a functions to vertically move the annular frame holding member 611 so as to selectively take a reference position where the mounting surface 611a is substantially equal in height to the upper end of the expanding drum 621 as shown in
The substrate breaking step and a pickup step using the tape expanding apparatus 6 will now be described with reference to
As a result, a tensile force acts on the substrate 2 attached to the dicing tape 5 in the radial direction of the substrate 2. As described above, the substrate 2 is formed with the modified layers 22 or the laser processed grooves 23 extending along the areas corresponding to the crossing streets set on the substrate 2. Accordingly, when the tensile force acts on the substrate 2 in its radial direction, the substrate 2 is broken along the areas corresponding to the crossing streets from the modified layers 22 or the laser processed grooves 23 as the break start point (breaking step). By performing this breaking step, a spacing S is formed between any adjacent ones of the individual MEMS devices 20 divided from each other.
Thereafter, as shown in
While the specific preferred embodiment of the present invention has been described above, it should be noted that the present invention is not limited to the above preferred embodiment, but various modifications may be made without departing from the scope of the present invention. In the above preferred embodiment, the break start point forming step is provided by the method of applying a laser beam to the substrate 2 along the areas corresponding to the crossing streets set on the substrate 2 before forming the MEMS devices 20 on the substrate 2, thereby forming the modified layers 22 inside the substrate 2 or the laser processed grooves 23 on the back side 2b of the substrate 2. As a modification, scribe grooves as a break start point may be formed on the back side of the substrate along the areas corresponding to the crossing streets by using a diamond scriber.
The present invention is not limited to the details of the above described preferred embodiments. The scope of the invention is defined by the appended claims and all changes and modifications as fall within the equivalence of the scope of the claims are therefore to be embraced by the invention.
Number | Date | Country | Kind |
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2010-059383 | Mar 2010 | JP | national |