This appln claims benefit of Prov. No. 60/206,230 filed May 22, 2000.
Number | Name | Date | Kind |
---|---|---|---|
4310380 | Flamm et al. | Jan 1982 | A |
4484978 | Keyser | Nov 1984 | A |
4666555 | Tsang | May 1987 | A |
4713141 | Tsang | Dec 1987 | A |
4726879 | Bondur et al. | Feb 1988 | A |
4741799 | Chen et al. | May 1988 | A |
5110408 | Fujii et al. | May 1992 | A |
5164330 | Davis et al. | Nov 1992 | A |
5242538 | Hamrah et al. | Sep 1993 | A |
5316616 | Nakamura et al. | May 1994 | A |
5358601 | Cathey | Oct 1994 | A |
5429070 | Campbell et al. | Jul 1995 | A |
5433823 | Cain | Jul 1995 | A |
5458734 | Tsukamoto | Oct 1995 | A |
5486706 | Yuki et al. | Jan 1996 | A |
5571366 | Ishii et al. | Nov 1996 | A |
5643473 | Tachi et al. | Jul 1997 | A |
5658472 | Bartha et al. | Aug 1997 | A |
5705025 | Dietrich et al. | Jan 1998 | A |
5759921 | Rostoker | Jun 1998 | A |
5767021 | Imai et al. | Jun 1998 | A |
5843847 | Pu et al. | Dec 1998 | A |
5854136 | Huang et al. | Dec 1998 | A |
5880033 | Tsai | Mar 1999 | A |
5899749 | Becker et al. | May 1999 | A |
5900163 | Yi et al. | May 1999 | A |
5933729 | Chan | Aug 1999 | A |
5965463 | Cui et al. | Oct 1999 | A |
5994160 | Niedermann et al. | Nov 1999 | A |
6025271 | Howard et al. | Feb 2000 | A |
6037265 | Mui et al. | Mar 2000 | A |
6080529 | Ye et al. | Jun 2000 | A |
6221784 | Schmidt et al. | Apr 2001 | B1 |
6277763 | Kugimiyama et al. | Aug 2001 | B1 |
Number | Date | Country |
---|---|---|
0 489 407 | Jun 1992 | EP |
0 552 491 | Jul 1993 | EP |
09-082686 | Mar 1997 | JP |
US0119282 | Jun 2001 | WO |
Entry |
---|
Pan, et al., “Selective reactive ion etching of tungsten films in CHF3 and other fluorinated gases”, J. Vac. Sci. and Tech. B, 6(4), (Jul./Aug. 1988), pp. 1073-1080. |
Theisen, et al., “Maskless Tungsten Etch Process for Plug Fill”, 1046b Extended Abstracts, Electrochem Soc., Spring Meeting, 90(1) (May 6-11, 1990), pp. 248-249. |
Ootera, et al., “Highly Selective Etching of W/WN/Poly-Si Gate on Thin Oxide Film With Gaspuff Plasmas”, Proc. of Symp.on Dry Process (Nov. 11-12, 1999), pp. 155-160. |
Hayashi, et al., SiO2 Etching Using Inductively Coupled Plasma, Electronics & Communications in Japan, Part 2, 81(9) (1998), pp. 21-28. |
Kaplita, et al., “Polysilicon planarization and plug recess etching in decoupled plasma source chamber using two endpoint techniques”, The SPIE Conf. on Process, Equipment & Materials Control, vol. 3882 (Sep. 1999), pp. 90-97. |
Number | Date | Country | |
---|---|---|---|
60/206230 | May 2000 | US |