Claims
- 1. A semiconductor structure with low dielectric constant inter-metal dielectric, said semiconductor structure comprising:a substrate, a first dielectric layer on said substrate, a plurality of metal structures in said first dielectric layer; and a plurality of second dielectric structures in said first dielectric layer and between said conductor structures, each said second dielectric structure having a dielectric constant smaller than said first dielectric layer.
- 2. The semiconductor structure of claim 1, wherein said second dielectric structures is made of spin-on dielectric material.
- 3. The semiconductor structure of claim 1, wherein said first dielectric layer comprises an oxide-based dielectric layer.
- 4. The semiconductor structure of claim 1, wherein said second dielectric structures are adjacent to said first dielectric layer.
- 5. The semiconductor structure of claim 1, wherein said conductor structures comprise a contact structure made of metal material.
- 6. A semiconductor structure with low dielectric constant inter-metal dielectric, said semiconductor structure comprising:a substrate, a first dielectric layer on said substrate, a plurality of metal structures in said first dielectric layer; and a plurality of spin-on dielectric structures in said first dielectric layer and between said metal structures, each said spin-on dielectric structure having a dielectric constant smaller than said first dielectric layer.
- 7. The semiconductor structure of claim 6, wherein said spin-on structures are adjacent to said metal structures and said first dielectric layer.
- 8. The semiconductor structure of claim 6, wherein said spin-on dielectric structures are on said substrate.
Parent Case Info
This is a divisional application of U.S. application Ser. No. 09/840,715 filed on Apr. 24, 2001, which has been abandoned.
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