Claims
- 1. A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure, said method comprising:decomposing a thin-film deposition gas containing a compound gas of carbon and fluorine to deposit an insulator film of a fluorine containing carbon film on a substrate; and heat treating said fluorine containing carbon film to desorb a part of components of said fluorine containing carbon film, wherein the heat treating comprises annealing said fluorine containing carbon film in an atmosphere of hydrogen gas.
- 2. A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure, said method comprising:decomposing a thin-film deposition gas containing a compound gas of carbon and fluorine to deposit an insulator film of a fluorine containing carbon film on a substrate; and heat treating said fluorine containing carbon film to desorb a part of components of said fluorine containing carbon film, wherein the heat treating comprises annealing said fluorine containing carbon film in an atmosphere of fluorine gas.
- 3. The method of claim 1 or 2, wherein the decomposing comprises activating said thin-film deposition gas in order to deposit said insulator film of said fluorine containing carbon film on said substrate.
- 4. A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure, the method comprising:introducing a plasma producing inert gas into a vacuum vessel; introducing a thin-film deposition gas including a compound gas of carbon and fluorine into the vacuum vessel; activating the plasma producing inert gas, wherein activating the plasma producing inert gas activates the thin-film deposition gas resulting in a thin fluorine containing carbon insulator film being deposited on a surface of a substrate; and heating the substrate in an atmosphere of one of hydrogen gas and fluorine gas in order to thermally stabilize the thin fluorine containing carbon insulator film.
- 5. The method of claim 4, wherein the inert gas is argon gas.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-344000 |
Nov 1997 |
JP |
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Parent Case Info
This application is a continuation of International Application No. PCT/JP98/05217, filed Nov. 19, 1998, the content of which is incorporated herein by reference.
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Continuations (1)
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Number |
Date |
Country |
Parent |
PCT/JP98/05217 |
Nov 1998 |
US |
Child |
09/578719 |
|
US |